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Article: Interfacial defects in resistive switching devices probed by thermal analysis
Title | Interfacial defects in resistive switching devices probed by thermal analysis | ||||||
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Authors | |||||||
Keywords | Aluminum Calcium Electrodes Heat Resistance Manganese Compounds Switching Systems Thermoanalysis | ||||||
Issue Date | 2009 | ||||||
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | ||||||
Citation | Journal of Applied Physics, 2009, v. 106 n. 1, article no. 014504 How to Cite? | ||||||
Abstract | Resistive switching mechanism is investigated by thermal analysis of metal electrodes in the planar Al/ Pr0.7 Ca0.3 MnO3 (PCMO) /Ni resistive switching device geometry. Two microthermocouples are used to monitor the electrode temperatures under different electrical bias conditions. Comparison of temperature differences between Al and Ni electrodes at high and low resistance states suggests that local heat source exists under the Al electrode at high resistance state. It agrees well with the recent finding in which AlOx presents at the Al/PCMO interface and it can be the origin of the resistance switching mechanism [Li, J. Phys. D 42, 045411 (2009)]. Thermal measurements demonstrate excellent capability on characterizing resistance switching devices. © 2009 American Institute of Physics. | ||||||
Persistent Identifier | http://hdl.handle.net/10722/141705 | ||||||
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 | ||||||
ISI Accession Number ID |
Funding Information: This work is supported by a studentship (H. K. L.) and a research grant (Grant No. 1-ZV43) from Hong Kong Polytechnic University. Funding from HKSAR through UGC grants (Grant Nos. PolyU 5013/08P and PolyU 5112/08E) is also acknowledged. | ||||||
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lau, HK | en_HK |
dc.contributor.author | Leung, CW | en_HK |
dc.contributor.author | Hu, WH | en_HK |
dc.contributor.author | Chan, PKL | en_HK |
dc.date.accessioned | 2011-09-27T02:58:20Z | - |
dc.date.available | 2011-09-27T02:58:20Z | - |
dc.date.issued | 2009 | en_HK |
dc.identifier.citation | Journal of Applied Physics, 2009, v. 106 n. 1, article no. 014504 | - |
dc.identifier.issn | 0021-8979 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/141705 | - |
dc.description.abstract | Resistive switching mechanism is investigated by thermal analysis of metal electrodes in the planar Al/ Pr0.7 Ca0.3 MnO3 (PCMO) /Ni resistive switching device geometry. Two microthermocouples are used to monitor the electrode temperatures under different electrical bias conditions. Comparison of temperature differences between Al and Ni electrodes at high and low resistance states suggests that local heat source exists under the Al electrode at high resistance state. It agrees well with the recent finding in which AlOx presents at the Al/PCMO interface and it can be the origin of the resistance switching mechanism [Li, J. Phys. D 42, 045411 (2009)]. Thermal measurements demonstrate excellent capability on characterizing resistance switching devices. © 2009 American Institute of Physics. | en_HK |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_HK |
dc.relation.ispartof | Journal of Applied Physics | en_HK |
dc.subject | Aluminum | en_US |
dc.subject | Calcium | en_US |
dc.subject | Electrodes | en_US |
dc.subject | Heat Resistance | en_US |
dc.subject | Manganese Compounds | en_US |
dc.subject | Switching Systems | en_US |
dc.subject | Thermoanalysis | en_US |
dc.title | Interfacial defects in resistive switching devices probed by thermal analysis | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Chan, PKL:pklc@hku.hk | en_HK |
dc.identifier.authority | Chan, PKL=rp01532 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1063/1.3157207 | en_HK |
dc.identifier.scopus | eid_2-s2.0-67650751514 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-67650751514&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 106 | en_HK |
dc.identifier.issue | 1 | en_HK |
dc.identifier.spage | article no. 014504 | - |
dc.identifier.epage | article no. 014504 | - |
dc.identifier.isi | WOS:000268065000120 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Lau, HK=36052041500 | en_HK |
dc.identifier.scopusauthorid | Leung, CW=22958301300 | en_HK |
dc.identifier.scopusauthorid | Hu, WH=27967614600 | en_HK |
dc.identifier.scopusauthorid | Chan, PKL=35742829700 | en_HK |
dc.identifier.issnl | 0021-8979 | - |