File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Interfacial defects in resistive switching devices probed by thermal analysis

TitleInterfacial defects in resistive switching devices probed by thermal analysis
Authors
KeywordsAluminum
Calcium
Electrodes
Heat Resistance
Manganese Compounds
Switching Systems
Thermoanalysis
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2009, v. 106 n. 1 How to Cite?
AbstractResistive switching mechanism is investigated by thermal analysis of metal electrodes in the planar Al/ Pr0.7 Ca0.3 MnO3 (PCMO) /Ni resistive switching device geometry. Two microthermocouples are used to monitor the electrode temperatures under different electrical bias conditions. Comparison of temperature differences between Al and Ni electrodes at high and low resistance states suggests that local heat source exists under the Al electrode at high resistance state. It agrees well with the recent finding in which AlOx presents at the Al/PCMO interface and it can be the origin of the resistance switching mechanism [Li, J. Phys. D 42, 045411 (2009)]. Thermal measurements demonstrate excellent capability on characterizing resistance switching devices. © 2009 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/141705
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
Funding AgencyGrant Number
Hong Kong Polytechnic University1-ZV43
UGCPolyU 5013/08P
PolyU 5112/08E
Funding Information:

This work is supported by a studentship (H. K. L.) and a research grant (Grant No. 1-ZV43) from Hong Kong Polytechnic University. Funding from HKSAR through UGC grants (Grant Nos. PolyU 5013/08P and PolyU 5112/08E) is also acknowledged.

References

 

DC FieldValueLanguage
dc.contributor.authorLau, HKen_HK
dc.contributor.authorLeung, CWen_HK
dc.contributor.authorHu, WHen_HK
dc.contributor.authorChan, PKLen_HK
dc.date.accessioned2011-09-27T02:58:20Z-
dc.date.available2011-09-27T02:58:20Z-
dc.date.issued2009en_HK
dc.identifier.citationJournal Of Applied Physics, 2009, v. 106 n. 1en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/141705-
dc.description.abstractResistive switching mechanism is investigated by thermal analysis of metal electrodes in the planar Al/ Pr0.7 Ca0.3 MnO3 (PCMO) /Ni resistive switching device geometry. Two microthermocouples are used to monitor the electrode temperatures under different electrical bias conditions. Comparison of temperature differences between Al and Ni electrodes at high and low resistance states suggests that local heat source exists under the Al electrode at high resistance state. It agrees well with the recent finding in which AlOx presents at the Al/PCMO interface and it can be the origin of the resistance switching mechanism [Li, J. Phys. D 42, 045411 (2009)]. Thermal measurements demonstrate excellent capability on characterizing resistance switching devices. © 2009 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.subjectAluminumen_US
dc.subjectCalciumen_US
dc.subjectElectrodesen_US
dc.subjectHeat Resistanceen_US
dc.subjectManganese Compoundsen_US
dc.subjectSwitching Systemsen_US
dc.subjectThermoanalysisen_US
dc.titleInterfacial defects in resistive switching devices probed by thermal analysisen_HK
dc.typeArticleen_HK
dc.identifier.emailChan, PKL:pklc@hku.hken_HK
dc.identifier.authorityChan, PKL=rp01532en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.3157207en_HK
dc.identifier.scopuseid_2-s2.0-67650751514en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-67650751514&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume106en_HK
dc.identifier.issue1en_HK
dc.identifier.isiWOS:000268065000120-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLau, HK=36052041500en_HK
dc.identifier.scopusauthoridLeung, CW=22958301300en_HK
dc.identifier.scopusauthoridHu, WH=27967614600en_HK
dc.identifier.scopusauthoridChan, PKL=35742829700en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats