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Conference Paper: Interfacial nature of resistive switching effect in perovskite-oxide thin film devices

TitleInterfacial nature of resistive switching effect in perovskite-oxide thin film devices
Authors
Lau, HKChan, PKLLeung, CW
KeywordsCalcium
Electrodes
Manganese Oxide
Nanoelectronics
Oxide Minerals
Perovskite
Switching
Thin Film Devices
Issue Date2010
Citation
Inec 2010 - 2010 3Rd International Nanoelectronics Conference, Proceedings, 2010, p. 744-745 How to Cite?
DOI: http://dx.doi.org/10.1109/INEC.2010.5424539
AbstractResistive switching effect has been demonstrated in LaNiO 3Pa0.7Ca0.3MnO3Ti top-down device structures. Hysteretic Current-voltage (I-V) characteristic was observed by applying potential differences in the order of 5 V across the electrodes. I-V characteristics with different combinations of top and bottom electrodes were measured, in order to identify the location contributing to the switching. Our results suggested that the interface between PCMO and the electrodes are responsible for the resistive switching effect. ©2010 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/141699
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLau, HKen_HK
dc.contributor.authorChan, PKLen_HK
dc.contributor.authorLeung, CWen_HK
dc.date.accessioned2011-09-27T02:58:18Z-
dc.date.available2011-09-27T02:58:18Z-
dc.date.issued2010en_HK
dc.identifier.citationInec 2010 - 2010 3Rd International Nanoelectronics Conference, Proceedings, 2010, p. 744-745en_HK
dc.identifier.urihttp://hdl.handle.net/10722/141699-
dc.description.abstractResistive switching effect has been demonstrated in LaNiO 3Pa0.7Ca0.3MnO3Ti top-down device structures. Hysteretic Current-voltage (I-V) characteristic was observed by applying potential differences in the order of 5 V across the electrodes. I-V characteristics with different combinations of top and bottom electrodes were measured, in order to identify the location contributing to the switching. Our results suggested that the interface between PCMO and the electrodes are responsible for the resistive switching effect. ©2010 IEEE.en_HK
dc.languageengen_US
dc.relation.ispartofINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedingsen_HK
dc.subjectCalciumen_US
dc.subjectElectrodesen_US
dc.subjectManganese Oxideen_US
dc.subjectNanoelectronicsen_US
dc.subjectOxide Mineralsen_US
dc.subjectPerovskiteen_US
dc.subjectSwitchingen_US
dc.subjectThin Film Devicesen_US
dc.titleInterfacial nature of resistive switching effect in perovskite-oxide thin film devicesen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailChan, PKL:pklc@hku.hken_HK
dc.identifier.authorityChan, PKL=rp01532en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/INEC.2010.5424539en_HK
dc.identifier.scopuseid_2-s2.0-77951654776en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77951654776&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage744en_HK
dc.identifier.epage745en_HK
dc.identifier.scopusauthoridLau, HK=36052041500en_HK
dc.identifier.scopusauthoridChan, PKL=35742829700en_HK
dc.identifier.scopusauthoridLeung, CW=22958301300en_HK

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