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Article: Enhanced memory effect in organic transistor by embedded silver nanoparticles

TitleEnhanced memory effect in organic transistor by embedded silver nanoparticles
Authors
Wang, SLeung, CWChan, PKL
KeywordsCharge traps
Memory effect
Nanoparticle
Organic transistor
Issue Date2010
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/orgel
Citation
Organic Electronics: Physics, Materials, Applications, 2010, v. 11 n. 6, p. 990-995 How to Cite?
DOI: http://dx.doi.org/10.1016/j.orgel.2010.03.020
AbstractOrganic memory devices based on silver nanoparticles (NPs) embedded into pentacene thin films are demonstrated. The memory effect is adjusted by varying the location of Ag NPs within the pentacene thin film, which is ascribed to the different trap densities. Maximum memory window of 90 V is obtained with the pentacene (15 nm)/Ag NPs (5 nm)/ pentacene (25 nm) configuration, which is three times larger than the conventional structure where the Ag NPs are directly deposited on the silicon dioxide. Hole trap mechanism dominates the hysteretic behavior and each nanoparticle contributes to around 20 traps states. These results show the potential application of such a structure in organic memory devices. © 2010 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/141698
ISSN
1566-1199
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.648
ISI Accession Number ID
WOS:000277935200003
Funding AgencyGrant Number
Hong Kong Polytechnic University1-ZV43
1-ZV4H
HKSAR through UGCPolyU 5112/08E
Funding Information:

This work is supported by research grants (Grant Nos. 1-ZV43 and 1-ZV4H) from Hong Kong Polytechnic University. Funding from HKSAR through UGC grant (Grant No. PolyU 5112/08E) is also acknowledged.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorWang, Sen_HK
dc.contributor.authorLeung, CWen_HK
dc.contributor.authorChan, PKLen_HK
dc.date.accessioned2011-09-27T02:58:17Z-
dc.date.available2011-09-27T02:58:17Z-
dc.date.issued2010en_HK
dc.identifier.citationOrganic Electronics: Physics, Materials, Applications, 2010, v. 11 n. 6, p. 990-995en_HK
dc.identifier.issn1566-1199en_HK
dc.identifier.urihttp://hdl.handle.net/10722/141698-
dc.description.abstractOrganic memory devices based on silver nanoparticles (NPs) embedded into pentacene thin films are demonstrated. The memory effect is adjusted by varying the location of Ag NPs within the pentacene thin film, which is ascribed to the different trap densities. Maximum memory window of 90 V is obtained with the pentacene (15 nm)/Ag NPs (5 nm)/ pentacene (25 nm) configuration, which is three times larger than the conventional structure where the Ag NPs are directly deposited on the silicon dioxide. Hole trap mechanism dominates the hysteretic behavior and each nanoparticle contributes to around 20 traps states. These results show the potential application of such a structure in organic memory devices. © 2010 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/orgelen_HK
dc.relation.ispartofOrganic Electronics: physics, materials, applicationsen_HK
dc.subjectCharge trapsen_HK
dc.subjectMemory effecten_HK
dc.subjectNanoparticleen_HK
dc.subjectOrganic transistoren_HK
dc.titleEnhanced memory effect in organic transistor by embedded silver nanoparticlesen_HK
dc.typeArticleen_HK
dc.identifier.emailChan, PKL:pklc@hku.hken_HK
dc.identifier.authorityChan, PKL=rp01532en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.orgel.2010.03.020en_HK
dc.identifier.scopuseid_2-s2.0-78049491764en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-78049491764&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume11en_HK
dc.identifier.issue6en_HK
dc.identifier.spage990en_HK
dc.identifier.epage995en_HK
dc.identifier.isiWOS:000277935200003-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridWang, S=36657897000en_HK
dc.identifier.scopusauthoridLeung, CW=22958301300en_HK
dc.identifier.scopusauthoridChan, PKL=35742829700en_HK
dc.identifier.citeulike6958062-
dc.identifier.issnl1566-1199-

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