File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Nonvolatile organic transistor-memory devices using various thicknesses of silver nanoparticle layers

TitleNonvolatile organic transistor-memory devices using various thicknesses of silver nanoparticle layers
Authors
KeywordsCarrier Transport
Nanoparticles
Semiconducting Organic Compounds
Semiconductor Devices
Issue Date2010
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2010, v. 97 n. 2 How to Cite?
AbstractWe demonstrate the modification of the memory effect in organic memory devices by adjusting the thickness of silver nanoparticles (NPs) layer embedded into the organic semiconductor. The memory window widens with increasing Ag NPs layer thickness, a maximum window of 90 V is achieved for 5 nm Ag NPs and the on/off current ratio decreases from 105 to 10 when the Ag NPs layer thickness increases from 1 to 10 nm. We also compare the charge retention properties of the devices with different Ag NPs thicknesses. Our investigation presents a direct approach to optimize the performance of organic memory with the current structure. © 2010 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/141697
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
Funding AgencyGrant Number
Hong Kong Polytechnic University1-ZV43
1-ZV4H
A-PJ73
UGCPolyU 5112/08E
Funding Information:

This work was supported by research grants (Grant Nos. 1-ZV43, 1-ZV4H, and A-PJ73) from Hong Kong Polytechnic University. Funding from HKSAR through UGC grant (Grant No. PolyU 5112/08E) is also acknowledged.

References

 

DC FieldValueLanguage
dc.contributor.authorWang, SMen_HK
dc.contributor.authorLeung, CWen_HK
dc.contributor.authorChan, PKLen_HK
dc.date.accessioned2011-09-27T02:58:17Z-
dc.date.available2011-09-27T02:58:17Z-
dc.date.issued2010en_HK
dc.identifier.citationApplied Physics Letters, 2010, v. 97 n. 2en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/141697-
dc.description.abstractWe demonstrate the modification of the memory effect in organic memory devices by adjusting the thickness of silver nanoparticles (NPs) layer embedded into the organic semiconductor. The memory window widens with increasing Ag NPs layer thickness, a maximum window of 90 V is achieved for 5 nm Ag NPs and the on/off current ratio decreases from 105 to 10 when the Ag NPs layer thickness increases from 1 to 10 nm. We also compare the charge retention properties of the devices with different Ag NPs thicknesses. Our investigation presents a direct approach to optimize the performance of organic memory with the current structure. © 2010 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.subjectCarrier Transporten_US
dc.subjectNanoparticlesen_US
dc.subjectSemiconducting Organic Compoundsen_US
dc.subjectSemiconductor Devicesen_US
dc.titleNonvolatile organic transistor-memory devices using various thicknesses of silver nanoparticle layersen_HK
dc.typeArticleen_HK
dc.identifier.emailChan, PKL:pklc@hku.hken_HK
dc.identifier.authorityChan, PKL=rp01532en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.3462949en_HK
dc.identifier.scopuseid_2-s2.0-77955162739en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77955162739&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume97en_HK
dc.identifier.issue2en_HK
dc.identifier.isiWOS:000279999800085-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWang, SM=35093369400en_HK
dc.identifier.scopusauthoridLeung, CW=22958301300en_HK
dc.identifier.scopusauthoridChan, PKL=35742829700en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats