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Article: Charge accumulation induced S-shape J-V curves in bilayer heterojunction organic solar cells

TitleCharge accumulation induced S-shape J-V curves in bilayer heterojunction organic solar cells
Authors
KeywordsBilayer heterojunction
Charge accumulation
Organic solar cell
S-shape
Issue Date2011
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/orgel
Citation
Organic Electronics: Physics, Materials, Applications, 2011, v. 12 n. 6, p. 880-885 How to Cite?
AbstractWe study the origin of the S-shape effect in the current-voltage curve of bilayer heterojunction organic solar cell induced by the exciton blocking layer (EBL). By gradually increasing the BCP thickness, the J-V curves change from exponential shape to S-shape, leading to a twofold degraded in the fill factor (FF). The variations of the J-V curves are attributed to the charge accumulation effect induced by the BCP layer. The charge accumulation phenomenon is further verified by the C-V measurements and a numerical model based on continuity and transport equations is developed to qualitatively reproduce the S-shape effect. Our finding provides insight into the origin of S-shape effect in bilayer heterojunction photovoltaic devices induced by the exciton blocking layer and reveals the importance of controlling charge accumulation for high performance OPVs especially the tandem devices. © 2011 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/141692
ISSN
2015 Impact Factor: 3.471
2015 SCImago Journal Rankings: 1.215
ISI Accession Number ID
Funding AgencyGrant Number
Hong Kong Polytechnic UniversityA-PJ28
A-PJ73
HKSAR through UGCPolyU 5112/08E
Funding Information:

This work is supported by research grants (Grant Nos. A-PJ28 and A-PJ73) from Hong Kong Polytechnic University. Funding from HKSAR through UGC grant (Grant No. PolyU 5112/08E) is also acknowledged.

References

 

DC FieldValueLanguage
dc.contributor.authorWang, JCen_HK
dc.contributor.authorRen, XCen_HK
dc.contributor.authorShi, SQen_HK
dc.contributor.authorLeung, CWen_HK
dc.contributor.authorChan, PKLen_HK
dc.date.accessioned2011-09-27T02:58:14Z-
dc.date.available2011-09-27T02:58:14Z-
dc.date.issued2011en_HK
dc.identifier.citationOrganic Electronics: Physics, Materials, Applications, 2011, v. 12 n. 6, p. 880-885en_HK
dc.identifier.issn1566-1199en_HK
dc.identifier.urihttp://hdl.handle.net/10722/141692-
dc.description.abstractWe study the origin of the S-shape effect in the current-voltage curve of bilayer heterojunction organic solar cell induced by the exciton blocking layer (EBL). By gradually increasing the BCP thickness, the J-V curves change from exponential shape to S-shape, leading to a twofold degraded in the fill factor (FF). The variations of the J-V curves are attributed to the charge accumulation effect induced by the BCP layer. The charge accumulation phenomenon is further verified by the C-V measurements and a numerical model based on continuity and transport equations is developed to qualitatively reproduce the S-shape effect. Our finding provides insight into the origin of S-shape effect in bilayer heterojunction photovoltaic devices induced by the exciton blocking layer and reveals the importance of controlling charge accumulation for high performance OPVs especially the tandem devices. © 2011 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/orgelen_HK
dc.relation.ispartofOrganic Electronics: physics, materials, applicationsen_HK
dc.subjectBilayer heterojunctionen_HK
dc.subjectCharge accumulationen_HK
dc.subjectOrganic solar cellen_HK
dc.subjectS-shapeen_HK
dc.titleCharge accumulation induced S-shape J-V curves in bilayer heterojunction organic solar cellsen_HK
dc.typeArticleen_HK
dc.identifier.emailChan, PKL:pklc@hku.hken_HK
dc.identifier.authorityChan, PKL=rp01532en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.orgel.2011.02.016en_HK
dc.identifier.scopuseid_2-s2.0-79953255029en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79953255029&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume12en_HK
dc.identifier.issue6en_HK
dc.identifier.spage880en_HK
dc.identifier.epage885en_HK
dc.identifier.eissn1878-5530-
dc.identifier.isiWOS:000290024900002-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridWang, JC=37666087000en_HK
dc.identifier.scopusauthoridRen, XC=37666062300en_HK
dc.identifier.scopusauthoridShi, SQ=7402200920en_HK
dc.identifier.scopusauthoridLeung, CW=22958301300en_HK
dc.identifier.scopusauthoridChan, PKL=35742829700en_HK
dc.identifier.citeulike9006893-

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