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Article: Thermal annealing and temperature dependences of memory effect in organic memory transistor

TitleThermal annealing and temperature dependences of memory effect in organic memory transistor
Authors
KeywordsCo-existence
Electron and hole traps
Memory effects
Memory window
Non-volatile memories
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2011, v. 99 n. 4, article no. 043303 How to Cite?
AbstractWe investigate the annealing and thermal effects of organic non-volatile memory with floating silver nanoparticles by real-time transfer curve measurements. During annealing, the memory window shows shrinkage of 23 due to structural variation of the nanoparticles. However, by increasing the device operating temperature from 20 to 90 °C after annealing, the memory window demonstrates an enlargement up to 100. The differences in the thermal responses are explained and confirmed by the co-existence of electron and hole traps. Our findings provide a better understanding of organic memory performances under various operating temperatures and validate their applications for temperature sensing or thermal memories. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/141690
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
Funding AgencyGrant Number
Hong Kong Polytechnic UniversityA-PK98
HKSAR through UGCPolyU 5112/08E
Funding Information:

This work was supported by research grant (Grant No. A-PK98) from Hong Kong Polytechnic University. Funding from HKSAR through UGC grant (Grant No. PolyU 5112/08E) is also acknowledged.

References

 

DC FieldValueLanguage
dc.contributor.authorRen, XCen_HK
dc.contributor.authorWang, SMen_HK
dc.contributor.authorLeung, CWen_HK
dc.contributor.authorYan, Fen_HK
dc.contributor.authorChan, PKLen_HK
dc.date.accessioned2011-09-27T02:58:12Z-
dc.date.available2011-09-27T02:58:12Z-
dc.date.issued2011en_HK
dc.identifier.citationApplied Physics Letters, 2011, v. 99 n. 4, article no. 043303en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/141690-
dc.description.abstractWe investigate the annealing and thermal effects of organic non-volatile memory with floating silver nanoparticles by real-time transfer curve measurements. During annealing, the memory window shows shrinkage of 23 due to structural variation of the nanoparticles. However, by increasing the device operating temperature from 20 to 90 °C after annealing, the memory window demonstrates an enlargement up to 100. The differences in the thermal responses are explained and confirmed by the co-existence of electron and hole traps. Our findings provide a better understanding of organic memory performances under various operating temperatures and validate their applications for temperature sensing or thermal memories. © 2011 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.-
dc.rightsCopyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Applied Physics Letters, 2011, v. 99 n. 4, article no. 043303) and may be found at (http://apl.aip.org/resource/1/applab/v99/i4/p043303_s1).-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectCo-existenceen_US
dc.subjectElectron and hole trapsen_US
dc.subjectMemory effectsen_US
dc.subjectMemory windowen_US
dc.subjectNon-volatile memories-
dc.titleThermal annealing and temperature dependences of memory effect in organic memory transistoren_HK
dc.typeArticleen_HK
dc.identifier.emailChan, PKL: pklc@hku.hken_HK
dc.identifier.authorityChan, PKL=rp01532en_HK
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1063/1.3617477en_HK
dc.identifier.scopuseid_2-s2.0-79961034744en_HK
dc.identifier.hkuros202975-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79961034744&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume99en_HK
dc.identifier.issue4, article no. 043303en_HK
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000293475500071-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChan, PKL=35742829700en_HK
dc.identifier.scopusauthoridYan, F=7202884401en_HK
dc.identifier.scopusauthoridLeung, CW=22958301300en_HK
dc.identifier.scopusauthoridWang, SM=47861486200en_HK
dc.identifier.scopusauthoridRen, XC=37666062300en_HK

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