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Article: Thermal annealing and temperature dependences of memory effect in organic memory transistor
Title | Thermal annealing and temperature dependences of memory effect in organic memory transistor | ||||||
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Authors | |||||||
Keywords | Co-existence Electron and hole traps Memory effects Memory window Non-volatile memories | ||||||
Issue Date | 2011 | ||||||
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | ||||||
Citation | Applied Physics Letters, 2011, v. 99 n. 4, article no. 043303 How to Cite? | ||||||
Abstract | We investigate the annealing and thermal effects of organic non-volatile memory with floating silver nanoparticles by real-time transfer curve measurements. During annealing, the memory window shows shrinkage of 23 due to structural variation of the nanoparticles. However, by increasing the device operating temperature from 20 to 90 °C after annealing, the memory window demonstrates an enlargement up to 100. The differences in the thermal responses are explained and confirmed by the co-existence of electron and hole traps. Our findings provide a better understanding of organic memory performances under various operating temperatures and validate their applications for temperature sensing or thermal memories. © 2011 American Institute of Physics. | ||||||
Persistent Identifier | http://hdl.handle.net/10722/141690 | ||||||
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 | ||||||
ISI Accession Number ID |
Funding Information: This work was supported by research grant (Grant No. A-PK98) from Hong Kong Polytechnic University. Funding from HKSAR through UGC grant (Grant No. PolyU 5112/08E) is also acknowledged. | ||||||
References |
DC Field | Value | Language |
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dc.contributor.author | Ren, XC | en_HK |
dc.contributor.author | Wang, SM | en_HK |
dc.contributor.author | Leung, CW | en_HK |
dc.contributor.author | Yan, F | en_HK |
dc.contributor.author | Chan, PKL | en_HK |
dc.date.accessioned | 2011-09-27T02:58:12Z | - |
dc.date.available | 2011-09-27T02:58:12Z | - |
dc.date.issued | 2011 | en_HK |
dc.identifier.citation | Applied Physics Letters, 2011, v. 99 n. 4, article no. 043303 | - |
dc.identifier.issn | 0003-6951 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/141690 | - |
dc.description.abstract | We investigate the annealing and thermal effects of organic non-volatile memory with floating silver nanoparticles by real-time transfer curve measurements. During annealing, the memory window shows shrinkage of 23 due to structural variation of the nanoparticles. However, by increasing the device operating temperature from 20 to 90 °C after annealing, the memory window demonstrates an enlargement up to 100. The differences in the thermal responses are explained and confirmed by the co-existence of electron and hole traps. Our findings provide a better understanding of organic memory performances under various operating temperatures and validate their applications for temperature sensing or thermal memories. © 2011 American Institute of Physics. | en_HK |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_HK |
dc.relation.ispartof | Applied Physics Letters | en_HK |
dc.rights | Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2011, v. 99 n. 4, article no. 043303 and may be found at https://doi.org/10.1063/1.3617477 | - |
dc.subject | Co-existence | en_US |
dc.subject | Electron and hole traps | en_US |
dc.subject | Memory effects | en_US |
dc.subject | Memory window | en_US |
dc.subject | Non-volatile memories | - |
dc.title | Thermal annealing and temperature dependences of memory effect in organic memory transistor | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Chan, PKL: pklc@hku.hk | en_HK |
dc.identifier.authority | Chan, PKL=rp01532 | en_HK |
dc.description.nature | published_or_final_version | en_US |
dc.identifier.doi | 10.1063/1.3617477 | en_HK |
dc.identifier.scopus | eid_2-s2.0-79961034744 | en_HK |
dc.identifier.hkuros | 202975 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-79961034744&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 99 | en_HK |
dc.identifier.issue | 4 | - |
dc.identifier.spage | article no. 043303 | - |
dc.identifier.epage | article no. 043303 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.isi | WOS:000293475500071 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Chan, PKL=35742829700 | en_HK |
dc.identifier.scopusauthorid | Yan, F=7202884401 | en_HK |
dc.identifier.scopusauthorid | Leung, CW=22958301300 | en_HK |
dc.identifier.scopusauthorid | Wang, SM=47861486200 | en_HK |
dc.identifier.scopusauthorid | Ren, XC=37666062300 | en_HK |
dc.identifier.issnl | 0003-6951 | - |