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Conference Paper: Carrier depletion and grain misorientations on individual grain boundaries of polycrystalline si thin films

TitleCarrier depletion and grain misorientations on individual grain boundaries of polycrystalline si thin films
Authors
KeywordsCarrier depletion
Deep level
Electrical property
Electron backscattering diffraction
Gettering
Issue Date2009
PublisherIEEE.
Citation
The 34th IEEE Conference on Photovoltaic Specialists (PVSC 2009), Philadelphia, PA., 7-12 June 2009. In Conference Record, 2009, p. 000471-000476 How to Cite?
AbstractStructural and microelectrical properties of grain boundaries (GBs) in polycrystalline Si thin films were investigated by electron backscattering diffraction (EBSD) and scanning capacitance microscopy (SCM). The SCM measurements revealed highly nonuniform carrier depletions among the GBs, indicating the variety of electrical properties due to the specific GB structures. The EBSD measurement showed that the films are weakly [001]-oriented with small fractions of grains in the [111] and [110] orientations. Comparison of the SCM and EBSD measurements taken on the same film area led to the following observations: (1) Σ3 GBs do not exhibit carrier depletions and thus do not have charged deep levels; (2) Some Σ9 GBs exhibit carrier depletions and some do not, indicating that the intrinsic Σ9 GBs do not have charged deep levels and the carrier depletions are due to impurity gettering at the GBs; (3) No significant relationship between the carrier depletion behavior and the grain misorientationwas found so far on the GBs with random misorientations; (4) The carrier depletion behavior does not depend only on the grain misorientation but also on the facet where the GB is taken. ©2009 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/140354
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorJiang, CSen_HK
dc.contributor.authorMoutinho, HRen_HK
dc.contributor.authorLiu, Fen_HK
dc.contributor.authorRomero, MJen_HK
dc.contributor.authorAiJassim, MMen_HK
dc.date.accessioned2011-09-23T06:10:37Z-
dc.date.available2011-09-23T06:10:37Z-
dc.date.issued2009en_HK
dc.identifier.citationThe 34th IEEE Conference on Photovoltaic Specialists (PVSC 2009), Philadelphia, PA., 7-12 June 2009. In Conference Record, 2009, p. 000471-000476en_HK
dc.identifier.issn0160-8371en_HK
dc.identifier.urihttp://hdl.handle.net/10722/140354-
dc.description.abstractStructural and microelectrical properties of grain boundaries (GBs) in polycrystalline Si thin films were investigated by electron backscattering diffraction (EBSD) and scanning capacitance microscopy (SCM). The SCM measurements revealed highly nonuniform carrier depletions among the GBs, indicating the variety of electrical properties due to the specific GB structures. The EBSD measurement showed that the films are weakly [001]-oriented with small fractions of grains in the [111] and [110] orientations. Comparison of the SCM and EBSD measurements taken on the same film area led to the following observations: (1) Σ3 GBs do not exhibit carrier depletions and thus do not have charged deep levels; (2) Some Σ9 GBs exhibit carrier depletions and some do not, indicating that the intrinsic Σ9 GBs do not have charged deep levels and the carrier depletions are due to impurity gettering at the GBs; (3) No significant relationship between the carrier depletion behavior and the grain misorientationwas found so far on the GBs with random misorientations; (4) The carrier depletion behavior does not depend only on the grain misorientation but also on the facet where the GB is taken. ©2009 IEEE.en_HK
dc.languageengen_US
dc.publisherIEEE.-
dc.relation.ispartofIEEE Photovoltaic Specialists Conference. Conference Recorden_HK
dc.rightsIEEE Photovoltaic Specialists Conference. Conference Record. Copyright © IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectCarrier depletion-
dc.subjectDeep level-
dc.subjectElectrical property-
dc.subjectElectron backscattering diffraction-
dc.subjectGettering-
dc.titleCarrier depletion and grain misorientations on individual grain boundaries of polycrystalline si thin filmsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLiu, F:fordliu@hku.hken_HK
dc.identifier.authorityLiu, F=rp01358en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/PVSC.2009.5411640en_HK
dc.identifier.scopuseid_2-s2.0-77951556152en_HK
dc.identifier.hkuros194634en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77951556152&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage000471en_HK
dc.identifier.epage000476en_HK
dc.publisher.placeUnited Statesen_HK
dc.description.otherThe 34th IEEE Conference on Photovoltaic Specialists (PVSC 2009), Philadelphia, PA., 7-12 June 2009. In Conference Record, 2009, p. 000471-000476-
dc.identifier.scopusauthoridJiang, CS=7403665808en_HK
dc.identifier.scopusauthoridMoutinho, HR=7006085620en_HK
dc.identifier.scopusauthoridLiu, F=11038795100en_HK
dc.identifier.scopusauthoridRomero, MJ=7202431518en_HK
dc.identifier.scopusauthoridAiJassim, MM=35955469500en_HK

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