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Conference Paper: Imaging electron transport across grain boundaries in an integrated electron and atomic force microscopy platform: application to polycrystalline silicon solar cells

TitleImaging electron transport across grain boundaries in an integrated electron and atomic force microscopy platform: application to polycrystalline silicon solar cells
Authors
KeywordsPhotovoltaic
Scanning probe microscopy (SPM)
Grain boundaries
Issue Date2009
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
The 2009 MRS Spring Meeting and Exhibit, San Francisco, CA., 14-17 April 2009. In Materials Research Society Symposium Proceedings, 2009, v. 1153, p. 287-292, no. 1153-A15-03 How to Cite?
AbstractWe have investigated the local electron transport in polycrystalline silicon (pc-Si) thin-films by atomic force microscopy (AFM)-based measurements of the electron-beam-induced current (EBIC). EVA solar cells are produced at UNSW by EVAporation of a-Si and subsequent solid-phase crystallization–a potentially cost-effective approach to the production of pc-Si photovoltaics. A fundamental understanding of the electron transport in these pc-Si thin films is of prime importance to address the factors limiting the efficiency of EVA solar cells. EBIC measurements performed in combination with an AFM integrated inside an electron microscope can resolve the electron transport across individual grain boundaries. AFM-EBIC reveals that most grain boundaries present a high energy barrier to the transport of electrons for both p-type and n-type EVA thin-films. Furthermore, for p-type EVA pc-Si, in contrast with n-type, charged grain boundaries are seen. Recombination at grain boundaries seems to be the dominant factor limiting the efficiency of these pc-Si solar cells.
DescriptionMRS Symposium 2009 has title: Symposium A – Amorphous and Polycrystalline Thin Film Silicon Science and Technology–2009
Persistent Identifierhttp://hdl.handle.net/10722/140353
ISBN
ISSN
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorRomero, MJen_HK
dc.contributor.authorLiu, Fen_HK
dc.contributor.authorKunz, Oen_HK
dc.contributor.authorWong, Jen_HK
dc.contributor.authorJiang, Cen_HK
dc.contributor.authorAl-Jassim, Men_HK
dc.contributor.authorAberle, AGen_HK
dc.date.accessioned2011-09-23T06:10:37Z-
dc.date.available2011-09-23T06:10:37Z-
dc.date.issued2009en_HK
dc.identifier.citationThe 2009 MRS Spring Meeting and Exhibit, San Francisco, CA., 14-17 April 2009. In Materials Research Society Symposium Proceedings, 2009, v. 1153, p. 287-292, no. 1153-A15-03en_HK
dc.identifier.isbn978-160511126-1-
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/140353-
dc.descriptionMRS Symposium 2009 has title: Symposium A – Amorphous and Polycrystalline Thin Film Silicon Science and Technology–2009-
dc.description.abstractWe have investigated the local electron transport in polycrystalline silicon (pc-Si) thin-films by atomic force microscopy (AFM)-based measurements of the electron-beam-induced current (EBIC). EVA solar cells are produced at UNSW by <i>EVAporation</i> of a-Si and subsequent <i>solid-phase crystallization</i>–a potentially cost-effective approach to the production of pc-Si photovoltaics. A fundamental understanding of the electron transport in these pc-Si thin films is of prime importance to address the factors limiting the efficiency of EVA solar cells. EBIC measurements performed in combination with an AFM integrated inside an electron microscope can resolve the electron transport across individual grain boundaries. AFM-EBIC reveals that most grain boundaries present a high energy barrier to the transport of electrons for both p-type and n-type EVA thin-films. Furthermore, for p-type EVA pc-Si, in contrast with n-type, charged grain boundaries are seen. Recombination at grain boundaries seems to be the dominant factor limiting the efficiency of these pc-Si solar cells.en_HK
dc.languageengen_US
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.relation.ispartofMaterials Research Society Symposium Proceedingsen_HK
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.-
dc.subjectPhotovoltaic-
dc.subjectScanning probe microscopy (SPM)-
dc.subjectGrain boundaries-
dc.titleImaging electron transport across grain boundaries in an integrated electron and atomic force microscopy platform: application to polycrystalline silicon solar cellsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailRomero, MJ: manuel.romero@nrel.goven_HK
dc.identifier.emailLiu, F: fordliu@hku.hk-
dc.identifier.emailKunz, O: o.kunz@unsw.edu.au-
dc.identifier.emailWong, J: o.kunz@unsw.edu.au-
dc.identifier.emailJiang, C: chun.sheng.jiang@nrel.gov-
dc.identifier.emailAl-Jassim, M: mowafak.aljassim@nrel.gov-
dc.identifier.emailAberle, AG: a.aberle@unsw.edu.au-
dc.identifier.authorityLiu, F=rp01358en_HK
dc.description.naturelink_to_OA_fulltext-
dc.identifier.doi10.1557/PROC-1153-A15-03-
dc.identifier.scopuseid_2-s2.0-77951138073en_HK
dc.identifier.hkuros194628en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77951138073&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume1153en_HK
dc.identifier.spage287en_HK
dc.identifier.epage292en_HK
dc.identifier.isiWOS:000307396000039-
dc.publisher.placeUnited Statesen_HK
dc.description.otherThe 2009 MRS Spring Meeting and Exhibit, San Francisco, CA., 14-17 April 2009. In Materials Research Society Symposium Proceedings, 2009, v. 1153, p. 287-292, no. 1153-A15-03-
dc.identifier.scopusauthoridAberle, AG=7006162095en_HK
dc.identifier.scopusauthoridAlJassim, MM=7005692042en_HK
dc.identifier.scopusauthoridJiang, CS=7403665808en_HK
dc.identifier.scopusauthoridWong, J=7404431480en_HK
dc.identifier.scopusauthoridKunz, O=23990733000en_HK
dc.identifier.scopusauthoridLiu, F=11038795100en_HK
dc.identifier.scopusauthoridRomero, MJ=7202431518en_HK

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