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Conference Paper: Grain boundary passivation with small polar molecules for photovoltaics

TitleGrain boundary passivation with small polar molecules for photovoltaics
Authors
KeywordsPhotovoltaics
Polar molecules
Grain boundaries
Passivation
Issue Date2011
PublisherIEEE.
Citation
The 37th IEEE Photovoltaic Specialist Conference (PVSC 2011), Seattle, WA., 19-24 June 2011. In Conference Record, 2011, p. 001486-001489 How to Cite?
AbstractGrain boundaries (GBs) play a major role in determining the device performance of in particular polycrystalline thin film solar cells including Si, CdTe and CIGS. Hydrogen passivation has been traditionally applied to passivate the defects at GBs. However, hydrogenated films such as amorphous silicon (a-Si:H) and microcrystalline silicon (μc-Si:H) are subject to light-induced degradation effects. In this study on multicrystalline (mc)-Si wafers, we found an excellent correlation between the grain misorientation and the corresponding electrical resistivity across grain boundaries. In particular, the charge transport across GBs was greatly enhanced after the wafers were properly treated in acetonitrile (CH3CN). The results were explained to be due to the more effective charge neutralization of polar molecules on GBs. These findings may help us achieve high-quality materials at low cost for high-efficient solar cells by improving the carrier transport and minimizing the carrier recombination. We also believe that this study will help us with a deeper understanding on GBs and their behaviors for the applications not only in photovoltaics, but also in other solid-state devices such as thin-film transistors. © 2011 IEEE.
DescriptionPanel: Engineering
Persistent Identifierhttp://hdl.handle.net/10722/140350
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorWang, Wen_HK
dc.contributor.authorWang, Len_HK
dc.contributor.authorLiu, Fen_HK
dc.date.accessioned2011-09-23T06:10:33Z-
dc.date.available2011-09-23T06:10:33Z-
dc.date.issued2011en_HK
dc.identifier.citationThe 37th IEEE Photovoltaic Specialist Conference (PVSC 2011), Seattle, WA., 19-24 June 2011. In Conference Record, 2011, p. 001486-001489en_HK
dc.identifier.issn0160-8371en_HK
dc.identifier.urihttp://hdl.handle.net/10722/140350-
dc.descriptionPanel: Engineering-
dc.description.abstractGrain boundaries (GBs) play a major role in determining the device performance of in particular polycrystalline thin film solar cells including Si, CdTe and CIGS. Hydrogen passivation has been traditionally applied to passivate the defects at GBs. However, hydrogenated films such as amorphous silicon (a-Si:H) and microcrystalline silicon (μc-Si:H) are subject to light-induced degradation effects. In this study on multicrystalline (mc)-Si wafers, we found an excellent correlation between the grain misorientation and the corresponding electrical resistivity across grain boundaries. In particular, the charge transport across GBs was greatly enhanced after the wafers were properly treated in acetonitrile (CH3CN). The results were explained to be due to the more effective charge neutralization of polar molecules on GBs. These findings may help us achieve high-quality materials at low cost for high-efficient solar cells by improving the carrier transport and minimizing the carrier recombination. We also believe that this study will help us with a deeper understanding on GBs and their behaviors for the applications not only in photovoltaics, but also in other solid-state devices such as thin-film transistors. © 2011 IEEE.en_HK
dc.languageengen_US
dc.publisherIEEE.en_US
dc.relation.ispartofIEEE Photovoltaic Specialists Conference. Conference Recorden_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsIEEE Photovoltaic Specialists Conference. Conference Record. Copyright © IEEE.en_US
dc.rights©2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_US
dc.subjectPhotovoltaics-
dc.subjectPolar molecules-
dc.subjectGrain boundaries-
dc.subjectPassivation-
dc.titleGrain boundary passivation with small polar molecules for photovoltaicsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLiu, F:fordliu@hku.hken_HK
dc.identifier.authorityLiu, F=rp01358en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/PVSC.2011.6186240en_HK
dc.identifier.scopuseid_2-s2.0-84861018157en_HK
dc.identifier.hkuros194440en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84861018157&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage001486en_HK
dc.identifier.epage001489en_HK
dc.publisher.placeUnited Statesen_HK
dc.description.otherThe 37th IEEE Photovoltaic Specialist Conference (PVSC 2011), Seattle, WA., 19-24 June 2011. In Conference Record, 2011, p. 001486-001489-
dc.identifier.scopusauthoridWang, W=55217447400en_HK
dc.identifier.scopusauthoridWang, L=55218506700en_HK
dc.identifier.scopusauthoridLiu, F=11038795100en_HK

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