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Article: Competition of resistive-switching mechanisms in nickel-rich nickel oxide thin films

TitleCompetition of resistive-switching mechanisms in nickel-rich nickel oxide thin films
Authors
Yu, QLiu, YChen, TPLiu, ZYu, YFFung, S
Issue Date2011
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://scitation.aip.org/ESL/
Citation
Electrochemical and Solid-State Letters, 2011, v. 14 n. 10, p. H400-H403 How to Cite?
DOI: http://dx.doi.org/10.1149/1.3609261
AbstractResistive-switching behaviors of Ni-rich nickel oxide thin films during the set and reset processes have been examined. In the switching from a low-resistance state (LRS) to a high-resistance state (HRS), a preferable reset voltage is observed. In addition, resistance fluctuations can be also observed in a successful or unsuccessful reset switching. These observations suggest that both the formation and deformation of conductive filaments could be involved and compete in the reset process. On the other hand, the switching from the HRS to the LRS in the set process is easier to occur with a higher pulse voltage, showing that the voltage promotes the formation of the filaments. © 2011 The Electrochemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/139654
ISSN
1099-0062
2014 Impact Factor: 2.321
ISI Accession Number ID
WOS:000295211600022
Funding AgencyGrant Number
NSFC60806040
Fundamental Research Funds for the Central UniversitiesZYGX2009X006
Young Scholar Fund of Sichuan2011JQ0002
National Research Foundation of SingaporeNRF-G-CRP 2007-01
Funding Information:

This work has been financially supported by NSFC under project No. 60806040, the Fundamental Research Funds for the Central Universities under project No. ZYGX2009X006, the Young Scholar Fund of Sichuan under project No. 2011JQ0002, and the National Research Foundation of Singapore under project NRF-G-CRP 2007-01.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorYu, Qen_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLiu, Zen_HK
dc.contributor.authorYu, YFen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2011-09-23T05:52:56Z-
dc.date.available2011-09-23T05:52:56Z-
dc.date.issued2011en_HK
dc.identifier.citationElectrochemical and Solid-State Letters, 2011, v. 14 n. 10, p. H400-H403en_HK
dc.identifier.issn1099-0062en_HK
dc.identifier.urihttp://hdl.handle.net/10722/139654-
dc.description.abstractResistive-switching behaviors of Ni-rich nickel oxide thin films during the set and reset processes have been examined. In the switching from a low-resistance state (LRS) to a high-resistance state (HRS), a preferable reset voltage is observed. In addition, resistance fluctuations can be also observed in a successful or unsuccessful reset switching. These observations suggest that both the formation and deformation of conductive filaments could be involved and compete in the reset process. On the other hand, the switching from the HRS to the LRS in the set process is easier to occur with a higher pulse voltage, showing that the voltage promotes the formation of the filaments. © 2011 The Electrochemical Society.en_HK
dc.languageengen_US
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://scitation.aip.org/ESL/en_HK
dc.relation.ispartofElectrochemical and Solid-State Lettersen_HK
dc.rights© The Electrochemical Society, Inc. 2011. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in Electrochemical and Solid-State Letters, 2011, v. 14 n. 10, p. H400-H403-
dc.titleCompetition of resistive-switching mechanisms in nickel-rich nickel oxide thin filmsen_HK
dc.typeArticleen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1149/1.3609261en_HK
dc.identifier.scopuseid_2-s2.0-80051627646en_HK
dc.identifier.hkuros195652en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-80051627646&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume14en_HK
dc.identifier.issue10en_HK
dc.identifier.spageH400en_HK
dc.identifier.epageH403en_HK
dc.identifier.isiWOS:000295211600022-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYu, Q=7402947741en_HK
dc.identifier.scopusauthoridLiu, Y=36063269800en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridLiu, Z=36062911700en_HK
dc.identifier.scopusauthoridYu, YF=8723751600en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl1099-0062-

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