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Article: Electrical reliability and leakage mechanisms in highly resistive multiferroic La0.1Bi0.9FeO3 ceramics

TitleElectrical reliability and leakage mechanisms in highly resistive multiferroic La0.1Bi0.9FeO3 ceramics
Authors
KeywordsApplied electric field
Conduction mechanism
Electrical reliability
Ferroelectric hysteresis loop
High resistivity
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2011, v. 98 n. 15, article no. 152902 How to Cite?
AbstractMultiferroic La0.1 Bi0.9 FeO3 (LBFO) ceramics with high resistivity were synthesized by using a modified rapid thermal process. The LBFO ceramics show very low leakage and low dielectric loss. Well saturated ferroelectric hysteresis loops and polarization switching currents have been observed. For a maximum applied electric field of 145 kV/cm, the remanent polarization is 17.8 μC/ cm2 and the coercive filed is 75 kV/cm. The dominant conduction mechanism in the LBFO ceramics has been found to be the space-charge-limited current mechanism rather than the thermal excitation mechanism. Electrical reliability related to the fatigue and polarization retention of the LBFO ceramics has also been discussed with the leakage mechanisms. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/139645
ISI Accession Number ID
Funding AgencyGrant Number
Natural Science Foundation of Tianjin11JCZDJC21800
Research Foundation of Tianjin Education Council
Funding Information:

This work has been partly supported by the Natural Science Foundation of Tianjin (No. 11JCZDJC21800) and the Research Foundation of Tianjin Education Council.

 

DC FieldValueLanguage
dc.contributor.authorWang, SYen_US
dc.contributor.authorQiu, Xen_US
dc.contributor.authorGao, Jen_US
dc.contributor.authorFeng, Yen_US
dc.contributor.authorSu, WNen_US
dc.contributor.authorZheng, JXen_US
dc.contributor.authorYu, DSen_US
dc.contributor.authorLi, DJen_US
dc.date.accessioned2011-09-23T05:52:52Z-
dc.date.available2011-09-23T05:52:52Z-
dc.date.issued2011en_US
dc.identifier.citationApplied Physics Letters, 2011, v. 98 n. 15, article no. 152902en_US
dc.identifier.urihttp://hdl.handle.net/10722/139645-
dc.description.abstractMultiferroic La0.1 Bi0.9 FeO3 (LBFO) ceramics with high resistivity were synthesized by using a modified rapid thermal process. The LBFO ceramics show very low leakage and low dielectric loss. Well saturated ferroelectric hysteresis loops and polarization switching currents have been observed. For a maximum applied electric field of 145 kV/cm, the remanent polarization is 17.8 μC/ cm2 and the coercive filed is 75 kV/cm. The dominant conduction mechanism in the LBFO ceramics has been found to be the space-charge-limited current mechanism rather than the thermal excitation mechanism. Electrical reliability related to the fatigue and polarization retention of the LBFO ceramics has also been discussed with the leakage mechanisms. © 2011 American Institute of Physics.-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsCopyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Applied Physics Letters, 2011, v. 98 n. 15, article no. 152902) and may be found at (http://apl.aip.org/resource/1/applab/v98/i15/p152902_s1).en_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_US
dc.subjectApplied electric field-
dc.subjectConduction mechanism-
dc.subjectElectrical reliability-
dc.subjectFerroelectric hysteresis loop-
dc.subjectHigh resistivity-
dc.titleElectrical reliability and leakage mechanisms in highly resistive multiferroic La0.1Bi0.9FeO3 ceramicsen_US
dc.typeArticleen_US
dc.identifier.emailWang, SY: sywang26@hku.hken_US
dc.identifier.emailGao, J: jugao@hku.hken_US
dc.identifier.authorityGao, J=rp00699en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1063/1.3580604-
dc.identifier.scopuseid_2-s2.0-79954622216-
dc.identifier.hkuros195586en_US
dc.identifier.volume98en_US
dc.identifier.issue15, article no. 152902-
dc.identifier.isiWOS:000289580800046-

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