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Article: Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films

TitleInfluence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films
Authors
KeywordsCurrent conduction
Electrically tunable
Excess si
Implantation dose
Ion dose
Issue Date2011
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A: Materials Science And Processing, 2011, v. 104 n. 1, p. 239-245 How to Cite?
Abstract
Strong visible electroluminescence (EL) with electrically tunable colors from violet to white has been observed from Si-implanted silicon nitride thin films. Influence of the implanted Si ion dose on both the current conduction and EL properties has been studied. With a larger excess Si concentration, the carrier transport is enhanced leading to a higher EL intensity, but the light emission efficiency is reduced. On the other hand, the increase of the excess Si concentration causes redshifts in the major EL bands and improves the transition of the EL colors with increasing current. The excess Si concentration is also found to have a significant influence on the EL degradation. These findings are important to the application of the Si-implanted thin films in light emitting devices. © 2010 Springer-Verlag.
Persistent Identifierhttp://hdl.handle.net/10722/139644
ISSN
2013 Impact Factor: 1.694
ISI Accession Number ID
Funding AgencyGrant Number
National Research Foundation of SingaporeNRF-G-CRP 2007-01
Funding Information:

This work has been financially supported by National Research Foundation of Singapore (NRF-G-CRP 2007-01).

References

 

Author Affiliations
  1. The University of Hong Kong
  2. Nanyang Technological University
  3. null
  4. Institute of Materials Research and Engineering, A-Star, Singapore
DC FieldValueLanguage
dc.contributor.authorCen, ZHen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorLiu, Zen_HK
dc.contributor.authorWong, JIen_HK
dc.contributor.authorYang, Men_HK
dc.contributor.authorGoh, WPen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2011-09-23T05:52:52Z-
dc.date.available2011-09-23T05:52:52Z-
dc.date.issued2011en_HK
dc.identifier.citationApplied Physics A: Materials Science And Processing, 2011, v. 104 n. 1, p. 239-245en_HK
dc.identifier.issn0947-8396en_HK
dc.identifier.urihttp://hdl.handle.net/10722/139644-
dc.description.abstractStrong visible electroluminescence (EL) with electrically tunable colors from violet to white has been observed from Si-implanted silicon nitride thin films. Influence of the implanted Si ion dose on both the current conduction and EL properties has been studied. With a larger excess Si concentration, the carrier transport is enhanced leading to a higher EL intensity, but the light emission efficiency is reduced. On the other hand, the increase of the excess Si concentration causes redshifts in the major EL bands and improves the transition of the EL colors with increasing current. The excess Si concentration is also found to have a significant influence on the EL degradation. These findings are important to the application of the Si-implanted thin films in light emitting devices. © 2010 Springer-Verlag.en_HK
dc.languageengen_US
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_HK
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_HK
dc.rightsThe original publication is available at www.springerlink.comen_US
dc.subjectCurrent conduction-
dc.subjectElectrically tunable-
dc.subjectExcess si-
dc.subjectImplantation dose-
dc.subjectIon dose-
dc.titleInfluence of implantation dose on electroluminescence from Si-implanted silicon nitride thin filmsen_HK
dc.typeArticleen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s00339-010-6117-yen_HK
dc.identifier.scopuseid_2-s2.0-79959273960en_HK
dc.identifier.hkuros195577en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79959273960&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume104en_HK
dc.identifier.issue1en_HK
dc.identifier.spage239en_HK
dc.identifier.epage245en_HK
dc.identifier.isiWOS:000291652600035-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridCen, ZH=23098969400en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridLiu, Z=36062911700en_HK
dc.identifier.scopusauthoridWong, JI=15123438200en_HK
dc.identifier.scopusauthoridYang, M=24464683100en_HK
dc.identifier.scopusauthoridGoh, WP=26025931500en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.citeulike8302751-

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