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Article: Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films
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TitleInfluence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films
 
AuthorsCen, ZH2
Chen, TP2
Ding, L3
Liu, Z2
Wong, JI2
Yang, M2
Goh, WP4
Fung, S1
 
KeywordsCurrent conduction
Electrically tunable
Excess si
Implantation dose
Ion dose
 
Issue Date2011
 
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
 
CitationApplied Physics A: Materials Science And Processing, 2011, v. 104 n. 1, p. 239-245 [How to Cite?]
DOI: http://dx.doi.org/10.1007/s00339-010-6117-y
 
AbstractStrong visible electroluminescence (EL) with electrically tunable colors from violet to white has been observed from Si-implanted silicon nitride thin films. Influence of the implanted Si ion dose on both the current conduction and EL properties has been studied. With a larger excess Si concentration, the carrier transport is enhanced leading to a higher EL intensity, but the light emission efficiency is reduced. On the other hand, the increase of the excess Si concentration causes redshifts in the major EL bands and improves the transition of the EL colors with increasing current. The excess Si concentration is also found to have a significant influence on the EL degradation. These findings are important to the application of the Si-implanted thin films in light emitting devices. © 2010 Springer-Verlag.
 
ISSN0947-8396
2013 Impact Factor: 1.694
 
DOIhttp://dx.doi.org/10.1007/s00339-010-6117-y
 
ISI Accession Number IDWOS:000291652600035
Funding AgencyGrant Number
National Research Foundation of SingaporeNRF-G-CRP 2007-01
Funding Information:

This work has been financially supported by National Research Foundation of Singapore (NRF-G-CRP 2007-01).

 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorCen, ZH
 
dc.contributor.authorChen, TP
 
dc.contributor.authorDing, L
 
dc.contributor.authorLiu, Z
 
dc.contributor.authorWong, JI
 
dc.contributor.authorYang, M
 
dc.contributor.authorGoh, WP
 
dc.contributor.authorFung, S
 
dc.date.accessioned2011-09-23T05:52:52Z
 
dc.date.available2011-09-23T05:52:52Z
 
dc.date.issued2011
 
dc.description.abstractStrong visible electroluminescence (EL) with electrically tunable colors from violet to white has been observed from Si-implanted silicon nitride thin films. Influence of the implanted Si ion dose on both the current conduction and EL properties has been studied. With a larger excess Si concentration, the carrier transport is enhanced leading to a higher EL intensity, but the light emission efficiency is reduced. On the other hand, the increase of the excess Si concentration causes redshifts in the major EL bands and improves the transition of the EL colors with increasing current. The excess Si concentration is also found to have a significant influence on the EL degradation. These findings are important to the application of the Si-implanted thin films in light emitting devices. © 2010 Springer-Verlag.
 
dc.description.natureLink_to_subscribed_fulltext
 
dc.identifier.citationApplied Physics A: Materials Science And Processing, 2011, v. 104 n. 1, p. 239-245 [How to Cite?]
DOI: http://dx.doi.org/10.1007/s00339-010-6117-y
 
dc.identifier.citeulike8302751
 
dc.identifier.doihttp://dx.doi.org/10.1007/s00339-010-6117-y
 
dc.identifier.epage245
 
dc.identifier.hkuros195577
 
dc.identifier.isiWOS:000291652600035
Funding AgencyGrant Number
National Research Foundation of SingaporeNRF-G-CRP 2007-01
Funding Information:

This work has been financially supported by National Research Foundation of Singapore (NRF-G-CRP 2007-01).

 
dc.identifier.issn0947-8396
2013 Impact Factor: 1.694
 
dc.identifier.issue1
 
dc.identifier.scopuseid_2-s2.0-79959273960
 
dc.identifier.spage239
 
dc.identifier.urihttp://hdl.handle.net/10722/139644
 
dc.identifier.volume104
 
dc.languageeng
 
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
 
dc.publisher.placeGermany
 
dc.relation.ispartofApplied Physics A: Materials Science and Processing
 
dc.relation.referencesReferences in Scopus
 
dc.rightsThe original publication is available at www.springerlink.com
 
dc.subjectCurrent conduction
 
dc.subjectElectrically tunable
 
dc.subjectExcess si
 
dc.subjectImplantation dose
 
dc.subjectIon dose
 
dc.titleInfluence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films
 
dc.typeArticle
 
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<contributor.author>Chen, TP</contributor.author>
<contributor.author>Ding, L</contributor.author>
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<contributor.author>Wong, JI</contributor.author>
<contributor.author>Yang, M</contributor.author>
<contributor.author>Goh, WP</contributor.author>
<contributor.author>Fung, S</contributor.author>
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Author Affiliations
  1. The University of Hong Kong
  2. Nanyang Technological University
  3. null
  4. Institute of Materials Research and Engineering, A-Star, Singapore