Article: Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films
| Title | Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films | ||||
|---|---|---|---|---|---|
| Authors | Cen, ZH2 Chen, TP2 Ding, L3 Liu, Z2 Wong, JI2 Yang, M2 Goh, WP4 Fung, S1 | ||||
| Keywords | Current conduction Electrically tunable Excess si Implantation dose Ion dose | ||||
| Issue Date | 2011 | ||||
| Publisher | Springer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm | ||||
| Citation | Applied Physics A: Materials Science And Processing, 2011, v. 104 n. 1, p. 239-245 [How to Cite?] DOI: http://dx.doi.org/10.1007/s00339-010-6117-y | ||||
| Abstract | Strong visible electroluminescence (EL) with electrically tunable colors from violet to white has been observed from Si-implanted silicon nitride thin films. Influence of the implanted Si ion dose on both the current conduction and EL properties has been studied. With a larger excess Si concentration, the carrier transport is enhanced leading to a higher EL intensity, but the light emission efficiency is reduced. On the other hand, the increase of the excess Si concentration causes redshifts in the major EL bands and improves the transition of the EL colors with increasing current. The excess Si concentration is also found to have a significant influence on the EL degradation. These findings are important to the application of the Si-implanted thin films in light emitting devices. © 2010 Springer-Verlag. | ||||
| ISSN | 0947-8396 2011 Impact Factor: 1.63 2011 SCImago Journal Rankings: 0.213 | ||||
| DOI | http://dx.doi.org/10.1007/s00339-010-6117-y | ||||
| ISI Accession Number ID | WOS:000291652600035
Funding Information: This work has been financially supported by National Research Foundation of Singapore (NRF-G-CRP 2007-01). | ||||
| References | References in Scopus |
| dc.contributor.author | Cen, ZH | ||||
|---|---|---|---|---|---|
| dc.contributor.author | Chen, TP | ||||
| dc.contributor.author | Ding, L | ||||
| dc.contributor.author | Liu, Z | ||||
| dc.contributor.author | Wong, JI | ||||
| dc.contributor.author | Yang, M | ||||
| dc.contributor.author | Goh, WP | ||||
| dc.contributor.author | Fung, S | ||||
| dc.date.accessioned | 2011-09-23T05:52:52Z | ||||
| dc.date.available | 2011-09-23T05:52:52Z | ||||
| dc.date.issued | 2011 | ||||
| dc.description.abstract | Strong visible electroluminescence (EL) with electrically tunable colors from violet to white has been observed from Si-implanted silicon nitride thin films. Influence of the implanted Si ion dose on both the current conduction and EL properties has been studied. With a larger excess Si concentration, the carrier transport is enhanced leading to a higher EL intensity, but the light emission efficiency is reduced. On the other hand, the increase of the excess Si concentration causes redshifts in the major EL bands and improves the transition of the EL colors with increasing current. The excess Si concentration is also found to have a significant influence on the EL degradation. These findings are important to the application of the Si-implanted thin films in light emitting devices. © 2010 Springer-Verlag. | ||||
| dc.description.nature | Link_to_subscribed_fulltext | ||||
| dc.identifier.citation | Applied Physics A: Materials Science And Processing, 2011, v. 104 n. 1, p. 239-245 [How to Cite?] DOI: http://dx.doi.org/10.1007/s00339-010-6117-y | ||||
| dc.identifier.citeulike | 8302751 | ||||
| dc.identifier.doi | http://dx.doi.org/10.1007/s00339-010-6117-y | ||||
| dc.identifier.epage | 245 | ||||
| dc.identifier.hkuros | 195577 | ||||
| dc.identifier.isi | WOS:000291652600035
Funding Information: This work has been financially supported by National Research Foundation of Singapore (NRF-G-CRP 2007-01). | ||||
| dc.identifier.issn | 0947-8396 2011 Impact Factor: 1.63 2011 SCImago Journal Rankings: 0.213 | ||||
| dc.identifier.issue | 1 | ||||
| dc.identifier.scopus | eid_2-s2.0-79959273960 | ||||
| dc.identifier.spage | 239 | ||||
| dc.identifier.uri | http://hdl.handle.net/10722/139644 | ||||
| dc.identifier.volume | 104 | ||||
| dc.language | eng | ||||
| dc.publisher | Springer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm | ||||
| dc.publisher.place | Germany | ||||
| dc.relation.ispartof | Applied Physics A: Materials Science and Processing | ||||
| dc.relation.references | References in Scopus | ||||
| dc.rights | The original publication is available at www.springerlink.com | ||||
| dc.subject | Current conduction | ||||
| dc.subject | Electrically tunable | ||||
| dc.subject | Excess si | ||||
| dc.subject | Implantation dose | ||||
| dc.subject | Ion dose | ||||
| dc.title | Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films | ||||
| dc.type | Article |
Author Affiliations
- The University of Hong Kong
- Nanyang Technological University
- null
- Institute of Materials Research and Engineering, A-Star, Singapore