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Article: Impacts of compressive strain on phase diagram of epitaxial Pr 0.5Sr0.5MnO3 films grown on LaAlO3 (0 0 1)

TitleImpacts of compressive strain on phase diagram of epitaxial Pr 0.5Sr0.5MnO3 films grown on LaAlO3 (0 0 1)
Authors
KeywordsAntiferromagnetic insulators
Biaxial compressive strain
Ferromagnetic metal
Thin films
Strain effect
Issue Date2011
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physb
Citation
Physica B: Condensed Matter, 2011, v. 406 n. 10, p. 1966-1968 How to Cite?
AbstractSeries Pr0.5Sr0.5MnO3 (PSMO) films of thickness ranging from 20 to 400 nm were epitaxially grown on (0 0 1)-oriented LaAlO3 using pulsed laser deposition method. The biaxial compressive strain effect on phase transition of the films was systematically investigated by both electrical and magnetic measurements. The 60 nm film shows a ferromagnetic metal to antiferromagnetic insulator (FMMAFI) transition at a temperature of ∼190 K. Such a FMMAFI transition is depressed as the films become thicker, and finally disappears in the strain-relaxed situation. On the other hand, the Curie temperature is remarkably enhanced (∼50 °C) when the film thickness increases from 60 to 400 nm. These results may yield the possibility to modulate the phase transitions by varying the structural strain. © 2011 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/139642
ISSN
2015 Impact Factor: 1.352
2015 SCImago Journal Rankings: 0.509
ISI Accession Number ID
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU 702407P
Funding Information:

The authors acknowledge Jianfeng Wang for the measurement of X-ray diffractometer and acknowledge Yue Wang for helpful discussion. J. Gao wishes to thank the support from the Research Grant Council of Hong Kong (Project no. HKU 702407P).

Grants

 

DC FieldValueLanguage
dc.contributor.authorChen, Len_US
dc.contributor.authorChen, Yen_US
dc.contributor.authorMa, Yen_US
dc.contributor.authorLian, Gen_US
dc.contributor.authorXiong, Gen_US
dc.contributor.authorGao, Jen_US
dc.date.accessioned2011-09-23T05:52:51Z-
dc.date.available2011-09-23T05:52:51Z-
dc.date.issued2011en_US
dc.identifier.citationPhysica B: Condensed Matter, 2011, v. 406 n. 10, p. 1966-1968en_US
dc.identifier.issn0921-4526-
dc.identifier.urihttp://hdl.handle.net/10722/139642-
dc.description.abstractSeries Pr0.5Sr0.5MnO3 (PSMO) films of thickness ranging from 20 to 400 nm were epitaxially grown on (0 0 1)-oriented LaAlO3 using pulsed laser deposition method. The biaxial compressive strain effect on phase transition of the films was systematically investigated by both electrical and magnetic measurements. The 60 nm film shows a ferromagnetic metal to antiferromagnetic insulator (FMMAFI) transition at a temperature of ∼190 K. Such a FMMAFI transition is depressed as the films become thicker, and finally disappears in the strain-relaxed situation. On the other hand, the Curie temperature is remarkably enhanced (∼50 °C) when the film thickness increases from 60 to 400 nm. These results may yield the possibility to modulate the phase transitions by varying the structural strain. © 2011 Elsevier B.V. All rights reserved.-
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physben_US
dc.relation.ispartofPhysica B: Condensed Matteren_US
dc.subjectAntiferromagnetic insulators-
dc.subjectBiaxial compressive strain-
dc.subjectFerromagnetic metal-
dc.subjectThin films-
dc.subjectStrain effect-
dc.titleImpacts of compressive strain on phase diagram of epitaxial Pr 0.5Sr0.5MnO3 films grown on LaAlO3 (0 0 1)en_US
dc.typeArticleen_US
dc.identifier.emailGao, J: jugao@hku.hken_US
dc.identifier.authorityGao, J=rp00699en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.physb.2011.02.066-
dc.identifier.scopuseid_2-s2.0-79953732502-
dc.identifier.hkuros195568en_US
dc.identifier.volume406en_US
dc.identifier.issue10-
dc.identifier.spage1966en_US
dc.identifier.epage1968en_US
dc.identifier.isiWOS:000290213600027-
dc.relation.projectField effect in epitaxial thin films of perovskite manganites based on simple planar field effect configurations-
dc.identifier.citeulike8983845-

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