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Article: Photoelectric effects and magnetic responses in highly rectifying Nd0.7Sr0.3MnO3/Nb-SrTiO3 heterojunctions

TitlePhotoelectric effects and magnetic responses in highly rectifying Nd0.7Sr0.3MnO3/Nb-SrTiO3 heterojunctions
Authors
Wang, JGao, J
KeywordsAsymmetric ratio
Heterostructures
I - V curve
Magnetic response
On/off ratio
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2011, v. 109 n. 7, article no. 07D708 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3540675
AbstractHeterostructures composed of Nd0.7Sr0.3MnO 3 and Nb-SrTiO3 were fabricated by laser ablation and characterized under different fields (optic, electric, and magnetic). The asymmetric ratios [β=I(1V)/I(-1V) in I-V curves were over 107, demonstrating highly rectifying properties in a wide temperature range. Under magnetic fields, remarkable modulations of I-V curves were achieved. Significant open circuit voltages were observed when illuminated by visible lights with wavelengths of 532 nm and 650 nm. A planar back-to-back diode (Nd 0.7Sr0.3MnO3/Nb-SrTiO3/Nd 0.7Sr0.3MnO3) with a good on/off ratio to visible lights was also fabricated. These results were discussed in analogy with conventional semiconductor junctions. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/139631
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:000289952100239
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU 7024/07P
University of Hong Kong
Funding Information:

This work has been supported by a grant of the Research Grant Council of Hong Kong (Project No. HKU 7024/07P) and a seed funding of the University of Hong Kong.

 

DC FieldValueLanguage
dc.contributor.authorWang, Jen_US
dc.contributor.authorGao, Jen_US
dc.date.accessioned2011-09-23T05:52:46Z-
dc.date.available2011-09-23T05:52:46Z-
dc.date.issued2011en_US
dc.identifier.citationJournal of Applied Physics, 2011, v. 109 n. 7, article no. 07D708-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10722/139631-
dc.description.abstractHeterostructures composed of Nd0.7Sr0.3MnO 3 and Nb-SrTiO3 were fabricated by laser ablation and characterized under different fields (optic, electric, and magnetic). The asymmetric ratios [β=I(1V)/I(-1V) in I-V curves were over 107, demonstrating highly rectifying properties in a wide temperature range. Under magnetic fields, remarkable modulations of I-V curves were achieved. Significant open circuit voltages were observed when illuminated by visible lights with wavelengths of 532 nm and 650 nm. A planar back-to-back diode (Nd 0.7Sr0.3MnO3/Nb-SrTiO3/Nd 0.7Sr0.3MnO3) with a good on/off ratio to visible lights was also fabricated. These results were discussed in analogy with conventional semiconductor junctions. © 2011 American Institute of Physics.-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.rightsCopyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2011, v. 109 n. 7, article no. 07D708 and may be found at https://doi.org/10.1063/1.3540675-
dc.subjectAsymmetric ratio-
dc.subjectHeterostructures-
dc.subjectI - V curve-
dc.subjectMagnetic response-
dc.subjectOn/off ratio-
dc.titlePhotoelectric effects and magnetic responses in highly rectifying Nd0.7Sr0.3MnO3/Nb-SrTiO3 heterojunctionsen_US
dc.typeArticleen_US
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=109&issue=7, article no. 07D708&spage=&epage=&date=2011&atitle=Photoelectric+effects+and+magnetic+responses+in+highly+rectifying+Nd0.7Sr0.3MnO3/Nb-SrTiO3+heterojunctions-
dc.identifier.emailGao, J: jugao@hku.hken_US
dc.identifier.authorityGao, J=rp00699en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3540675-
dc.identifier.scopuseid_2-s2.0-79955452484-
dc.identifier.hkuros195380en_US
dc.identifier.volume109en_US
dc.identifier.issue7-
dc.identifier.spagearticle no. 07D708-
dc.identifier.epagearticle no. 07D708-
dc.identifier.isiWOS:000289952100239-
dc.identifier.issnl0021-8979-

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