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Article: Electron transport and band structure in phosphorus-doped polycrystalline silicon films

TitleElectron transport and band structure in phosphorus-doped polycrystalline silicon films
Authors
KeywordsAmorphous materials
Polycrystalline materials
Band transports
Thermal crystallizations
Carrier mobility
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2009, v. 105 n. 3 How to Cite?
AbstractWe study transport mechanisms, effective mass, and band structure by measuring the resistivity, Hall, and Seebeck and Nernst coefficients in heavily phosphorus-doped polycrystalline silicon films made by thermal crystallization of amorphous silicon. We observe a change in transport mechanism which results in an increase in electron mobility from 10% to 80% of the single-crystal silicon mobility as the carrier concentration increases from 1019 to 1020 cm-3. Our measurements of effective mass at the Fermi level indicate that as the carrier concentration increases, there is a shift from impurity-band transport to conduction-band transport, and that the electron effective mass is lower in the impurity band than in the conduction band of Si. The shift to conduction-band transport improves electron mobility with carrier density by improving intragrain carrier mean free path lengths and relaxation times. © 2009 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/139395
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
Funding AgencyGrant Number
U.S. DOEDE-AC36-99GO10337
Funding Information:

The authors thank Dr. Paul Stradins of NREL for assistance with optical measurement of crystallization and for several helpful suggestions. Dr. Klaus Lips of Helmholtz Centre Berlin is gratefully acknowledged for helpful discussions about magnetic susceptibility. This work was supported by the U.S. DOE under Contract No. DE-AC36-99GO10337.

References

 

DC FieldValueLanguage
dc.contributor.authorYoung, DLen_HK
dc.contributor.authorBranz, HMen_HK
dc.contributor.authorLiu, Fen_HK
dc.contributor.authorReedy, Ren_HK
dc.contributor.authorTo, Ben_HK
dc.contributor.authorWang, Qen_HK
dc.date.accessioned2011-09-23T05:49:07Z-
dc.date.available2011-09-23T05:49:07Z-
dc.date.issued2009en_HK
dc.identifier.citationJournal Of Applied Physics, 2009, v. 105 n. 3en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/139395-
dc.description.abstractWe study transport mechanisms, effective mass, and band structure by measuring the resistivity, Hall, and Seebeck and Nernst coefficients in heavily phosphorus-doped polycrystalline silicon films made by thermal crystallization of amorphous silicon. We observe a change in transport mechanism which results in an increase in electron mobility from 10% to 80% of the single-crystal silicon mobility as the carrier concentration increases from 1019 to 1020 cm-3. Our measurements of effective mass at the Fermi level indicate that as the carrier concentration increases, there is a shift from impurity-band transport to conduction-band transport, and that the electron effective mass is lower in the impurity band than in the conduction band of Si. The shift to conduction-band transport improves electron mobility with carrier density by improving intragrain carrier mean free path lengths and relaxation times. © 2009 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.-
dc.rightsCopyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2009, v. 105 n. 3, article no. 033715 and may be found at http://jap.aip.org/resource/1/japiau/v105/i3/p033715_s1-
dc.subjectAmorphous materials-
dc.subjectPolycrystalline materials-
dc.subjectBand transports-
dc.subjectThermal crystallizations-
dc.subjectCarrier mobility-
dc.titleElectron transport and band structure in phosphorus-doped polycrystalline silicon filmsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=105&issue=3, article no. 033715&spage=033715&epage=1&date=2009&atitle=Electron+transport+and+band+structure+in+phosphorus-doped+polycrystalline+silicon+films-
dc.identifier.emailLiu, F:fordliu@hku.hken_HK
dc.identifier.authorityLiu, F=rp01358en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3068349en_HK
dc.identifier.scopuseid_2-s2.0-60449118668en_HK
dc.identifier.hkuros194648en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-60449118668&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume105en_HK
dc.identifier.issue3en_HK
dc.identifier.spage033715-1en_US
dc.identifier.epage033715-7en_US
dc.identifier.isiWOS:000263409700051-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYoung, DL=7404150022en_HK
dc.identifier.scopusauthoridBranz, HM=7005229770en_HK
dc.identifier.scopusauthoridLiu, F=11038795100en_HK
dc.identifier.scopusauthoridReedy, R=35335059900en_HK
dc.identifier.scopusauthoridTo, B=7003532009en_HK
dc.identifier.scopusauthoridWang, Q=7406910452en_HK

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