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Article: Ultrahigh-crystalline-quality silicon pillars formed by millimeter-wave annealing of amorphous silicon on glass
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TitleUltrahigh-crystalline-quality silicon pillars formed by millimeter-wave annealing of amorphous silicon on glass
 
AuthorsLiu, F2
Jones, KM2
Xu, Y2
Nemeth, W2
Lohr, J3
Neilson, J1
Romero, MJ2
AlJassim, MM2
Young, DL2
 
KeywordsAmorphous silicon (a-si)
High crystallinity
Silicon pillar
Annealing
Wave power
 
Issue Date2009
 
PublisherWiley - V C H Verlag GmbH & Co KGaA.
 
CitationAdvanced Materials, 2009, v. 21 n. 29, p. 3002-3006 [How to Cite?]
DOI: http://dx.doi.org/10.1002/adma.200900157
 
AbstractUnique 3D silicon pillar structures that were formed by millisecond-long single-pulse annealing of 110 GHz millimeter-wave radiation incident upon intrinsic-amorphous silicon (a-Si) thin films deposited on glass by hot-wire chemical vapor deposition (HWCVD) were investigated. SiO2/glass samples were annealed with a millimeter-wave power density of approximately 40kW cm-2 and a pulse length that varied from 1 to 8.5 ms. The microscopic images show that the pillars have a very high crystallinity without structural defects. The Si pillar is also found to be covered by a thin a-SiO2 of 80 nm and a relatively thick nc-Si of 950 nm layers on the top and a thin nc-Si layer of 120 nm and a thick SiO2 layer on the sides. The melt Si pillars are found to retain the egg-like shapes after they crystallize due to high cooling rates.
 
ISSN0935-9648
2012 Impact Factor: 14.829
2012 SCImago Journal Rankings: 7.178
 
DOIhttp://dx.doi.org/10.1002/adma.200900157
 
ISI Accession Number IDWOS:000269090800009
Funding AgencyGrant Number
U.S. Department of EnergyDE-AC36-99GO10337
Funding Information:

This work has been funded by the U.S. Department of Energy under contract number DE-AC36-99GO10337. The authors thank A. Duda at NREL for growing SiO<INF>2</INF> layers.

 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorLiu, F
 
dc.contributor.authorJones, KM
 
dc.contributor.authorXu, Y
 
dc.contributor.authorNemeth, W
 
dc.contributor.authorLohr, J
 
dc.contributor.authorNeilson, J
 
dc.contributor.authorRomero, MJ
 
dc.contributor.authorAlJassim, MM
 
dc.contributor.authorYoung, DL
 
dc.date.accessioned2011-09-23T05:49:07Z
 
dc.date.available2011-09-23T05:49:07Z
 
dc.date.issued2009
 
dc.description.abstractUnique 3D silicon pillar structures that were formed by millisecond-long single-pulse annealing of 110 GHz millimeter-wave radiation incident upon intrinsic-amorphous silicon (a-Si) thin films deposited on glass by hot-wire chemical vapor deposition (HWCVD) were investigated. SiO2/glass samples were annealed with a millimeter-wave power density of approximately 40kW cm-2 and a pulse length that varied from 1 to 8.5 ms. The microscopic images show that the pillars have a very high crystallinity without structural defects. The Si pillar is also found to be covered by a thin a-SiO2 of 80 nm and a relatively thick nc-Si of 950 nm layers on the top and a thin nc-Si layer of 120 nm and a thick SiO2 layer on the sides. The melt Si pillars are found to retain the egg-like shapes after they crystallize due to high cooling rates.
 
dc.description.natureLink_to_subscribed_fulltext
 
dc.identifier.citationAdvanced Materials, 2009, v. 21 n. 29, p. 3002-3006 [How to Cite?]
DOI: http://dx.doi.org/10.1002/adma.200900157
 
dc.identifier.doihttp://dx.doi.org/10.1002/adma.200900157
 
dc.identifier.eissn1521-4095
 
dc.identifier.epage3006
 
dc.identifier.hkuros194601
 
dc.identifier.isiWOS:000269090800009
Funding AgencyGrant Number
U.S. Department of EnergyDE-AC36-99GO10337
Funding Information:

This work has been funded by the U.S. Department of Energy under contract number DE-AC36-99GO10337. The authors thank A. Duda at NREL for growing SiO<INF>2</INF> layers.

 
dc.identifier.issn0935-9648
2012 Impact Factor: 14.829
2012 SCImago Journal Rankings: 7.178
 
dc.identifier.issue29
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-68149120549
 
dc.identifier.spage3002
 
dc.identifier.urihttp://hdl.handle.net/10722/139394
 
dc.identifier.volume21
 
dc.languageeng
 
dc.publisherWiley - V C H Verlag GmbH & Co KGaA.
 
dc.publisher.placeGermany
 
dc.relation.ispartofAdvanced Materials
 
dc.relation.referencesReferences in Scopus
 
dc.subjectAmorphous silicon (a-si)
 
dc.subjectHigh crystallinity
 
dc.subjectSilicon pillar
 
dc.subjectAnnealing
 
dc.subjectWave power
 
dc.titleUltrahigh-crystalline-quality silicon pillars formed by millimeter-wave annealing of amorphous silicon on glass
 
dc.typeArticle
 
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Author Affiliations
  1. Lexam Research
  2. National Renewable Energy Laboratory
  3. General Atomics