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Article: Ultrahigh-crystalline-quality silicon pillars formed by millimeter-wave annealing of amorphous silicon on glass

TitleUltrahigh-crystalline-quality silicon pillars formed by millimeter-wave annealing of amorphous silicon on glass
Authors
KeywordsAmorphous silicon (a-si)
High crystallinity
Silicon pillar
Annealing
Wave power
Issue Date2009
PublisherWiley - V C H Verlag GmbH & Co KGaA.
Citation
Advanced Materials, 2009, v. 21 n. 29, p. 3002-3006 How to Cite?
Abstract
Unique 3D silicon pillar structures that were formed by millisecond-long single-pulse annealing of 110 GHz millimeter-wave radiation incident upon intrinsic-amorphous silicon (a-Si) thin films deposited on glass by hot-wire chemical vapor deposition (HWCVD) were investigated. SiO2/glass samples were annealed with a millimeter-wave power density of approximately 40kW cm-2 and a pulse length that varied from 1 to 8.5 ms. The microscopic images show that the pillars have a very high crystallinity without structural defects. The Si pillar is also found to be covered by a thin a-SiO2 of 80 nm and a relatively thick nc-Si of 950 nm layers on the top and a thin nc-Si layer of 120 nm and a thick SiO2 layer on the sides. The melt Si pillars are found to retain the egg-like shapes after they crystallize due to high cooling rates.
Persistent Identifierhttp://hdl.handle.net/10722/139394
ISSN
2013 Impact Factor: 15.409
2013 SCImago Journal Rankings: 7.857
ISI Accession Number ID
Funding AgencyGrant Number
U.S. Department of EnergyDE-AC36-99GO10337
Funding Information:

This work has been funded by the U.S. Department of Energy under contract number DE-AC36-99GO10337. The authors thank A. Duda at NREL for growing SiO<INF>2</INF> layers.

References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Fen_HK
dc.contributor.authorJones, KMen_HK
dc.contributor.authorXu, Yen_HK
dc.contributor.authorNemeth, Wen_HK
dc.contributor.authorLohr, Jen_HK
dc.contributor.authorNeilson, Jen_HK
dc.contributor.authorRomero, MJen_HK
dc.contributor.authorAlJassim, MMen_HK
dc.contributor.authorYoung, DLen_HK
dc.date.accessioned2011-09-23T05:49:07Z-
dc.date.available2011-09-23T05:49:07Z-
dc.date.issued2009en_HK
dc.identifier.citationAdvanced Materials, 2009, v. 21 n. 29, p. 3002-3006en_HK
dc.identifier.issn0935-9648en_HK
dc.identifier.urihttp://hdl.handle.net/10722/139394-
dc.description.abstractUnique 3D silicon pillar structures that were formed by millisecond-long single-pulse annealing of 110 GHz millimeter-wave radiation incident upon intrinsic-amorphous silicon (a-Si) thin films deposited on glass by hot-wire chemical vapor deposition (HWCVD) were investigated. SiO2/glass samples were annealed with a millimeter-wave power density of approximately 40kW cm-2 and a pulse length that varied from 1 to 8.5 ms. The microscopic images show that the pillars have a very high crystallinity without structural defects. The Si pillar is also found to be covered by a thin a-SiO2 of 80 nm and a relatively thick nc-Si of 950 nm layers on the top and a thin nc-Si layer of 120 nm and a thick SiO2 layer on the sides. The melt Si pillars are found to retain the egg-like shapes after they crystallize due to high cooling rates.en_HK
dc.languageengen_US
dc.publisherWiley - V C H Verlag GmbH & Co KGaA.-
dc.relation.ispartofAdvanced Materialsen_HK
dc.subjectAmorphous silicon (a-si)-
dc.subjectHigh crystallinity-
dc.subjectSilicon pillar-
dc.subjectAnnealing-
dc.subjectWave power-
dc.titleUltrahigh-crystalline-quality silicon pillars formed by millimeter-wave annealing of amorphous silicon on glassen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0935-9648&volume=21&issue=29&spage=3002–3006&epage=&date=2009&atitle=Ultrahigh-crystalline-quality+silicon+pillars+formed+by+millimeter-wave+annealing+of+amorphous+silicon+on+glass-
dc.identifier.emailLiu, F:fordliu@hku.hken_HK
dc.identifier.authorityLiu, F=rp01358en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/adma.200900157en_HK
dc.identifier.scopuseid_2-s2.0-68149120549en_HK
dc.identifier.hkuros194601en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-68149120549&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume21en_HK
dc.identifier.issue29en_HK
dc.identifier.spage3002en_HK
dc.identifier.epage3006en_HK
dc.identifier.eissn1521-4095-
dc.identifier.isiWOS:000269090800009-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridLiu, F=11038795100en_HK
dc.identifier.scopusauthoridJones, KM=24321208800en_HK
dc.identifier.scopusauthoridXu, Y=7406449248en_HK
dc.identifier.scopusauthoridNemeth, W=30567445200en_HK
dc.identifier.scopusauthoridLohr, J=7103413769en_HK
dc.identifier.scopusauthoridNeilson, J=7101613112en_HK
dc.identifier.scopusauthoridRomero, MJ=7202431518en_HK
dc.identifier.scopusauthoridAlJassim, MM=7005692042en_HK
dc.identifier.scopusauthoridYoung, DL=7404150022en_HK

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