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Article: Optical response of grain boundaries in upgraded metallurgical-grade silicon for photovoltaics

TitleOptical response of grain boundaries in upgraded metallurgical-grade silicon for photovoltaics
Authors
KeywordsCharacterization
Grain boundaries
Impurities
Light emission
Photovoltaics
Upgraded metallurgical-grade silicon (UMG-Si)
Issue Date2011
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/solmat
Citation
Solar Energy Materials And Solar Cells, 2011, v. 95 n. 8, p. 2497-2501 How to Cite?
AbstractUsing upgraded metallurgical-grade silicon (UMG-Si) is a cost-effective and energy-efficient approach for the production of solar cells. Grain boundaries (GBs) play a major role in determining the device performance of multicrystalline Si (mc-Si) solar cells. In this study two UMG-Si wafers, one from the middle part of a brick and the other from the top part of the same brick, were investigated. An excellent correlation was found between the grain misorientation and the corresponding optical response of GBs as indicated by photoluminescence (PL) imaging, electron backscattered diffraction (EBSD), and cross-sectional transmission electron microscopy (TEM). In addition, the PL features at random GBs depend also on the impurity levels in the wafer. In particular the PL emission was greatly enhanced in the narrow regions close to the random GB in the top wafer, which is an interesting phenomenon that may have potential application in high efficiency light-emission diodes (LEDs) based on Si. © 2011 Elsevier B.V.
Persistent Identifierhttp://hdl.handle.net/10722/139393
ISSN
2015 Impact Factor: 4.732
2015 SCImago Journal Rankings: 1.996
ISI Accession Number ID
Funding AgencyGrant Number
Seed Funding Programme for Basic Research at HKU200910159016
HKU Initiative on Clean Energy and Environment (HKU-ICEE)
US Department of EnergyDE-AC36-08-GO28308
Funding Information:

F. Liu thanks the financial support from the Seed Funding Programme for Basic Research at HKU (Project Code 200910159016) and the HKU Initiative on Clean Energy and Environment (HKU-ICEE) funding. At NREL, this work is supported by the US Department of Energy under Contract no. DE-AC36-08-GO28308.

References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Fen_HK
dc.contributor.authorJiang, CSen_HK
dc.contributor.authorGuthrey, Hen_HK
dc.contributor.authorJohnston, Sen_HK
dc.contributor.authorRomero, MJen_HK
dc.contributor.authorGorman, BPen_HK
dc.contributor.authorAlJassim, MMen_HK
dc.date.accessioned2011-09-23T05:49:06Z-
dc.date.available2011-09-23T05:49:06Z-
dc.date.issued2011en_HK
dc.identifier.citationSolar Energy Materials And Solar Cells, 2011, v. 95 n. 8, p. 2497-2501en_HK
dc.identifier.issn0927-0248en_HK
dc.identifier.urihttp://hdl.handle.net/10722/139393-
dc.description.abstractUsing upgraded metallurgical-grade silicon (UMG-Si) is a cost-effective and energy-efficient approach for the production of solar cells. Grain boundaries (GBs) play a major role in determining the device performance of multicrystalline Si (mc-Si) solar cells. In this study two UMG-Si wafers, one from the middle part of a brick and the other from the top part of the same brick, were investigated. An excellent correlation was found between the grain misorientation and the corresponding optical response of GBs as indicated by photoluminescence (PL) imaging, electron backscattered diffraction (EBSD), and cross-sectional transmission electron microscopy (TEM). In addition, the PL features at random GBs depend also on the impurity levels in the wafer. In particular the PL emission was greatly enhanced in the narrow regions close to the random GB in the top wafer, which is an interesting phenomenon that may have potential application in high efficiency light-emission diodes (LEDs) based on Si. © 2011 Elsevier B.V.en_HK
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/solmaten_HK
dc.relation.ispartofSolar Energy Materials and Solar Cellsen_HK
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in <Solar Energy Materials & Solar Cells>. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in PUBLICATION, [VOL 2011, ISSUE 8, (2011)] DOI 10.1016/j.solmat.2011.04.039en_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectCharacterizationen_HK
dc.subjectGrain boundariesen_HK
dc.subjectImpuritiesen_HK
dc.subjectLight emissionen_HK
dc.subjectPhotovoltaicsen_HK
dc.subjectUpgraded metallurgical-grade silicon (UMG-Si)en_HK
dc.titleOptical response of grain boundaries in upgraded metallurgical-grade silicon for photovoltaicsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0927-0248&volume=95&issue=8&spage=2497–2501&epage=&date=2011&atitle=Optical+response+of+grain+boundaries+in+upgraded+metallurgical-grade+silicon+for+photovoltaics-
dc.identifier.emailLiu, F:fordliu@hku.hken_HK
dc.identifier.authorityLiu, F=rp01358en_HK
dc.description.naturepostprint-
dc.identifier.doi10.1016/j.solmat.2011.04.039en_HK
dc.identifier.scopuseid_2-s2.0-79958115112en_HK
dc.identifier.hkuros194439en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79958115112&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume95en_HK
dc.identifier.issue8en_HK
dc.identifier.spage2497en_HK
dc.identifier.epage2501en_HK
dc.identifier.isiWOS:000292945700074-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridLiu, F=11038795100en_HK
dc.identifier.scopusauthoridJiang, CS=7403665808en_HK
dc.identifier.scopusauthoridGuthrey, H=36674855200en_HK
dc.identifier.scopusauthoridJohnston, S=7401781847en_HK
dc.identifier.scopusauthoridRomero, MJ=7202431518en_HK
dc.identifier.scopusauthoridGorman, BP=7004796404en_HK
dc.identifier.scopusauthoridAlJassim, MM=7005692042en_HK

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