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Conference Paper: Reliability study on micro-structured InGaN light-emitting diodes

TitleReliability study on micro-structured InGaN light-emitting diodes
Authors
KeywordsNanosphere lithography
Photonic bandgap
Photonic crystal
Issue Date2011
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628
Citation
International Workshop on Nitride Semiconductors (IWN2010), Tampa, Florida, USA, 19-24 September 2010. In Physica Status Solidi. C: Current Topics in Solid State Physics, 2011, v. 8 n. 7-8, p. 2258-2260 How to Cite?
AbstractMicro-structured InGaN light-emitting diodes (μLED) are capable of delivering enhanced light output due to additional light extraction through exposed sidewalls. However, these sidewalls formed by plasma etching can potentially affect the lifetime and reliability of the devices as a result of plama damage. A study on the electrical characteristics and reliability of μLED arrays has been carried out in this work. Although improved optical performance can be expected based on previous studies, expanded device sidewalls prove to accelerate the rate of optical degradation, adversely affect the lifetimes of devices. Through precise current-voltage measurement vertical current conduction along the plasma-damaged sidewalls was identified as the key mechanism contributing to degraded reliability. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Persistent Identifierhttp://hdl.handle.net/10722/139239
ISSN
2015 SCImago Journal Rankings: 0.392
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLi, ZLen_HK
dc.contributor.authorLi, KHen_HK
dc.contributor.authorChoi, HWen_HK
dc.date.accessioned2011-09-23T05:47:29Z-
dc.date.available2011-09-23T05:47:29Z-
dc.date.issued2011en_HK
dc.identifier.citationInternational Workshop on Nitride Semiconductors (IWN2010), Tampa, Florida, USA, 19-24 September 2010. In Physica Status Solidi. C: Current Topics in Solid State Physics, 2011, v. 8 n. 7-8, p. 2258-2260en_HK
dc.identifier.issn1862-6351en_HK
dc.identifier.urihttp://hdl.handle.net/10722/139239-
dc.description.abstractMicro-structured InGaN light-emitting diodes (μLED) are capable of delivering enhanced light output due to additional light extraction through exposed sidewalls. However, these sidewalls formed by plasma etching can potentially affect the lifetime and reliability of the devices as a result of plama damage. A study on the electrical characteristics and reliability of μLED arrays has been carried out in this work. Although improved optical performance can be expected based on previous studies, expanded device sidewalls prove to accelerate the rate of optical degradation, adversely affect the lifetimes of devices. Through precise current-voltage measurement vertical current conduction along the plasma-damaged sidewalls was identified as the key mechanism contributing to degraded reliability. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_HK
dc.languageengen_US
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628en_HK
dc.relation.ispartofPhysica Status Solidi. C: Current Topics in Solid State Physicsen_HK
dc.subjectNanosphere lithographyen_HK
dc.subjectPhotonic bandgapen_HK
dc.subjectPhotonic crystalen_HK
dc.titleReliability study on micro-structured InGaN light-emitting diodesen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/pssc.201000970en_HK
dc.identifier.scopuseid_2-s2.0-79960708043en_HK
dc.identifier.hkuros192485en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79960708043&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume8en_HK
dc.identifier.issue7-8en_HK
dc.identifier.spage2258en_HK
dc.identifier.epage2260en_HK
dc.identifier.isiWOS:000301581500079-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridLi, ZL=34167922900en_HK
dc.identifier.scopusauthoridLi, KH=8976237500en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK

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