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Article: InGaN light-emitting diodes with indium-tin-oxide photonic crystal current-spreading layer

TitleInGaN light-emitting diodes with indium-tin-oxide photonic crystal current-spreading layer
Authors
Li, KHChoi, HW
KeywordsAs-grown
Etch damage
Etch mask
Finite difference time domain simulations
Indium tin oxide
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2011, v. 110 n. 5, article no. 053104 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3631797
AbstractPhotonic crystal patterns on the indium tin oxide layer of an InGaN/GaN light-emitting diode are fabricated via nanosphere lithography in combination with dry etching. The silica spheres acting as an etch mask are self-assembled into a hexagonal closed-packed monolayer array. After etching, the photonic crystal (PhC) pattern is formed across the indium-tin-oxide (ITO) films so that the semiconductor layers are left intact and thus free of etch damages. Despite slight degradation to the electrical properties, the ITO-PhC light-emitting diodes (LEDs) exhibit enhancements of their optical emission power by as much as 64% over an as-grown LED. The optical performances and mechanisms of the photonic crystal LEDs are investigated with the aid of rigorous coupled wave analysis and finite-difference time-domain simulations. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/139233
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:000294968600025
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLi, KHen_HK
dc.contributor.authorChoi, HWen_HK
dc.date.accessioned2011-09-23T05:47:27Z-
dc.date.available2011-09-23T05:47:27Z-
dc.date.issued2011en_HK
dc.identifier.citationJournal of Applied Physics, 2011, v. 110 n. 5, article no. 053104-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/139233-
dc.description.abstractPhotonic crystal patterns on the indium tin oxide layer of an InGaN/GaN light-emitting diode are fabricated via nanosphere lithography in combination with dry etching. The silica spheres acting as an etch mask are self-assembled into a hexagonal closed-packed monolayer array. After etching, the photonic crystal (PhC) pattern is formed across the indium-tin-oxide (ITO) films so that the semiconductor layers are left intact and thus free of etch damages. Despite slight degradation to the electrical properties, the ITO-PhC light-emitting diodes (LEDs) exhibit enhancements of their optical emission power by as much as 64% over an as-grown LED. The optical performances and mechanisms of the photonic crystal LEDs are investigated with the aid of rigorous coupled wave analysis and finite-difference time-domain simulations. © 2011 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2011, v. 110 n. 5, article no. 053104 and may be found at https://doi.org/10.1063/1.3631797-
dc.subjectAs-grown-
dc.subjectEtch damage-
dc.subjectEtch mask-
dc.subjectFinite difference time domain simulations-
dc.subjectIndium tin oxide-
dc.titleInGaN light-emitting diodes with indium-tin-oxide photonic crystal current-spreading layeren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=110&issue=5, article no. 053104&spage=&epage=&date=2011&atitle=InGaN+light-emitting+diodes+with+Indium-Tin-Oxide+photonic+crystal+current-spreading+layer-
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3631797en_HK
dc.identifier.scopuseid_2-s2.0-80052922590en_HK
dc.identifier.hkuros192476en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-80052922590&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume110en_HK
dc.identifier.issue5en_HK
dc.identifier.spagearticle no. 053104-
dc.identifier.epagearticle no. 053104-
dc.identifier.isiWOS:000294968600025-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, KH=8976237500en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.issnl0021-8979-

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