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Article: A sub-1 V, 26 μw, low-output-impedance CMOS bandgap reference with a low dropout or source follower mode
Title | A sub-1 V, 26 μw, low-output-impedance CMOS bandgap reference with a low dropout or source follower mode | ||||||||
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Authors | |||||||||
Keywords | CMOS bandgap Low dropout Source follower Sub-1 V Energy gap | ||||||||
Issue Date | 2011 | ||||||||
Publisher | IEEE. The Journal's web site is located at http://www.computer.org | ||||||||
Citation | IEEE Transactions on Very Large Scale Integration Systems, 2011, v. 19 n. 7, p. 1305-1309 How to Cite? | ||||||||
Abstract | We present a low-power bandgap reference (BGR), functional from sub-1 V to 5 V supply voltage with either a low dropout (LDO) regulator or source follower (SF) output stage, denoted as the LDO or SF mode, in a 0.5-μm standard digital CMOS process with V tn≈ 0.6 V and |V tp| ≈ 0.7 V at 27 °C. Both modes operate at sub-1 V under zero load with a power consumption of around 26 μW. At 1 V (1.1 V) supply, the LDO (SF) mode provides an output current up to 1.1 mA (0.35 mA), a load regulation of ±8.5 mV/mA (±33 mV/mA) with approximately 10 μ s transient, a line regulation of ±4.2 mV/V (±50μV/V), and a temperature compensated reference voltage of 0.228 V (0.235 V) with a temperature coefficient around 34 ppm/° C from -20°C to 120 °C. At 1.5 V supply, the LDO (SF) mode can further drive up to 9.6 mA (3.2 mA) before the reference voltage falls to 90% of its nominal value. Such low-supply-voltage and high-current-driving BGR in standard digital CMOS processes is highly useful in portable and switching applications. © 2010 IEEE. | ||||||||
Persistent Identifier | http://hdl.handle.net/10722/139229 | ||||||||
ISSN | 2023 Impact Factor: 2.8 2023 SCImago Journal Rankings: 0.937 | ||||||||
ISI Accession Number ID |
Funding Information: This work was supported in part by the Innovation and Technology Commission (ITC) of the HKSAR Government, and in part by the Hong Kong Research Grants Council and the University Research Committee of The University of Hong Kong. | ||||||||
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ng, DCW | en_US |
dc.contributor.author | Kwong, DKK | en_US |
dc.contributor.author | Wong, N | en_US |
dc.date.accessioned | 2011-09-23T05:47:25Z | - |
dc.date.available | 2011-09-23T05:47:25Z | - |
dc.date.issued | 2011 | en_US |
dc.identifier.citation | IEEE Transactions on Very Large Scale Integration Systems, 2011, v. 19 n. 7, p. 1305-1309 | en_US |
dc.identifier.issn | 1063-8210 | - |
dc.identifier.uri | http://hdl.handle.net/10722/139229 | - |
dc.description.abstract | We present a low-power bandgap reference (BGR), functional from sub-1 V to 5 V supply voltage with either a low dropout (LDO) regulator or source follower (SF) output stage, denoted as the LDO or SF mode, in a 0.5-μm standard digital CMOS process with V tn≈ 0.6 V and |V tp| ≈ 0.7 V at 27 °C. Both modes operate at sub-1 V under zero load with a power consumption of around 26 μW. At 1 V (1.1 V) supply, the LDO (SF) mode provides an output current up to 1.1 mA (0.35 mA), a load regulation of ±8.5 mV/mA (±33 mV/mA) with approximately 10 μ s transient, a line regulation of ±4.2 mV/V (±50μV/V), and a temperature compensated reference voltage of 0.228 V (0.235 V) with a temperature coefficient around 34 ppm/° C from -20°C to 120 °C. At 1.5 V supply, the LDO (SF) mode can further drive up to 9.6 mA (3.2 mA) before the reference voltage falls to 90% of its nominal value. Such low-supply-voltage and high-current-driving BGR in standard digital CMOS processes is highly useful in portable and switching applications. © 2010 IEEE. | - |
dc.language | eng | en_US |
dc.publisher | IEEE. The Journal's web site is located at http://www.computer.org | - |
dc.relation.ispartof | IEEE Transactions on Very Large Scale Integration Systems | en_US |
dc.rights | ©2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | - |
dc.subject | CMOS bandgap | - |
dc.subject | Low dropout | - |
dc.subject | Source follower | - |
dc.subject | Sub-1 V | - |
dc.subject | Energy gap | - |
dc.title | A sub-1 V, 26 μw, low-output-impedance CMOS bandgap reference with a low dropout or source follower mode | en_US |
dc.type | Article | en_US |
dc.identifier.email | Wong, N: nwong@eee.hku.hk | en_US |
dc.identifier.authority | Wong, N=rp00190 | en_US |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1109/TVLSI.2010.2046658 | - |
dc.identifier.scopus | eid_2-s2.0-79959760917 | - |
dc.identifier.hkuros | 192287 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-79959760917&selection=ref&src=s&origin=recordpage | - |
dc.identifier.volume | 19 | en_US |
dc.identifier.issue | 7 | - |
dc.identifier.spage | 1305 | en_US |
dc.identifier.epage | 1309 | en_US |
dc.identifier.isi | WOS:000292098600016 | - |
dc.publisher.place | United States | - |
dc.identifier.scopusauthorid | Ng, DCW=7201645733 | - |
dc.identifier.scopusauthorid | Kwong, DKK=22734059200 | - |
dc.identifier.scopusauthorid | Wong, N=35235551600 | - |
dc.identifier.issnl | 1063-8210 | - |