File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: A sub-1 V, 26 μw, low-output-impedance CMOS bandgap reference with a low dropout or source follower mode

TitleA sub-1 V, 26 μw, low-output-impedance CMOS bandgap reference with a low dropout or source follower mode
Authors
KeywordsCMOS bandgap
Low dropout
Source follower
Sub-1 V
Energy gap
Issue Date2011
PublisherIEEE. The Journal's web site is located at http://www.computer.org
Citation
IEEE Transactions on Very Large Scale Integration Systems, 2011, v. 19 n. 7, p. 1305-1309 How to Cite?
AbstractWe present a low-power bandgap reference (BGR), functional from sub-1 V to 5 V supply voltage with either a low dropout (LDO) regulator or source follower (SF) output stage, denoted as the LDO or SF mode, in a 0.5-μm standard digital CMOS process with V tn≈ 0.6 V and |V tp| ≈ 0.7 V at 27 °C. Both modes operate at sub-1 V under zero load with a power consumption of around 26 μW. At 1 V (1.1 V) supply, the LDO (SF) mode provides an output current up to 1.1 mA (0.35 mA), a load regulation of ±8.5 mV/mA (±33 mV/mA) with approximately 10 μ s transient, a line regulation of ±4.2 mV/V (±50μV/V), and a temperature compensated reference voltage of 0.228 V (0.235 V) with a temperature coefficient around 34 ppm/° C from -20°C to 120 °C. At 1.5 V supply, the LDO (SF) mode can further drive up to 9.6 mA (3.2 mA) before the reference voltage falls to 90% of its nominal value. Such low-supply-voltage and high-current-driving BGR in standard digital CMOS processes is highly useful in portable and switching applications. © 2010 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/139229
ISSN
2015 Impact Factor: 1.245
2015 SCImago Journal Rankings: 0.698
ISI Accession Number ID
Funding AgencyGrant Number
Innovation and Technology Commission (ITC) of the HKSAR Government
Hong Kong Research Grants Council
University Research Committee of The University of Hong Kong
Funding Information:

This work was supported in part by the Innovation and Technology Commission (ITC) of the HKSAR Government, and in part by the Hong Kong Research Grants Council and the University Research Committee of The University of Hong Kong.

References

 

DC FieldValueLanguage
dc.contributor.authorNg, DCWen_US
dc.contributor.authorKwong, DKKen_US
dc.contributor.authorWong, Nen_US
dc.date.accessioned2011-09-23T05:47:25Z-
dc.date.available2011-09-23T05:47:25Z-
dc.date.issued2011en_US
dc.identifier.citationIEEE Transactions on Very Large Scale Integration Systems, 2011, v. 19 n. 7, p. 1305-1309en_US
dc.identifier.issn1063-8210-
dc.identifier.urihttp://hdl.handle.net/10722/139229-
dc.description.abstractWe present a low-power bandgap reference (BGR), functional from sub-1 V to 5 V supply voltage with either a low dropout (LDO) regulator or source follower (SF) output stage, denoted as the LDO or SF mode, in a 0.5-μm standard digital CMOS process with V tn≈ 0.6 V and |V tp| ≈ 0.7 V at 27 °C. Both modes operate at sub-1 V under zero load with a power consumption of around 26 μW. At 1 V (1.1 V) supply, the LDO (SF) mode provides an output current up to 1.1 mA (0.35 mA), a load regulation of ±8.5 mV/mA (±33 mV/mA) with approximately 10 μ s transient, a line regulation of ±4.2 mV/V (±50μV/V), and a temperature compensated reference voltage of 0.228 V (0.235 V) with a temperature coefficient around 34 ppm/° C from -20°C to 120 °C. At 1.5 V supply, the LDO (SF) mode can further drive up to 9.6 mA (3.2 mA) before the reference voltage falls to 90% of its nominal value. Such low-supply-voltage and high-current-driving BGR in standard digital CMOS processes is highly useful in portable and switching applications. © 2010 IEEE.-
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://www.computer.org-
dc.relation.ispartofIEEE Transactions on Very Large Scale Integration Systemsen_US
dc.rightsIEEE Transactions on Very Large Scale Integration Systems. Copyright © IEEE.-
dc.rights©2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectCMOS bandgap-
dc.subjectLow dropout-
dc.subjectSource follower-
dc.subjectSub-1 V-
dc.subjectEnergy gap-
dc.titleA sub-1 V, 26 μw, low-output-impedance CMOS bandgap reference with a low dropout or source follower modeen_US
dc.typeArticleen_US
dc.identifier.emailWong, N: nwong@eee.hku.hken_US
dc.identifier.authorityWong, N=rp00190en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/TVLSI.2010.2046658-
dc.identifier.scopuseid_2-s2.0-79959760917-
dc.identifier.hkuros192287en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79959760917&selection=ref&src=s&origin=recordpage-
dc.identifier.volume19en_US
dc.identifier.issue7-
dc.identifier.spage1305en_US
dc.identifier.epage1309en_US
dc.identifier.isiWOS:000292098600016-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridNg, DCW=7201645733-
dc.identifier.scopusauthoridKwong, DKK=22734059200-
dc.identifier.scopusauthoridWong, N=35235551600-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats