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Conference Paper: A magnetically shielded instrument for magnetoresistance and noise characterizations of magnetic tunnel junction sensors

TitleA magnetically shielded instrument for magnetoresistance and noise characterizations of magnetic tunnel junction sensors
Authors
Keywords1/f noise
Mangetic tunnel junction (MTJ)
Measurement setup
Tunneling magnetoresistance (TMR)
Issue Date2010
PublisherIEEE.
Citation
The 2010 IEEE International Conference of Electronic Devices and Solid-State Circuits (EDSSC), Hong Kong, 15-17 December 2010. In Proceedings of EDSSC, 2010, p. 1-4 How to Cite?
AbstractA magnetically shielded setup was developed for characterizing magnetoresistance (MR) and noise properties of magnetic tunneling junction (MTJ) sensors. A mu-metal shielding is installed to avoid the interference of external magnetic disturbance. Both MR curves and noise power spectra of MTJ sensors can be obtained for further data analysis. Moreover, a hard-axis magnetic field can be applied to eliminate the hysteresis and the linear field response of MTJ sensors can be measured. The preliminary measurement results on MTJ sensors are presented to illustrate the characterization capabilities of this setup. © 2010 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/137732
ISBN
References

 

DC FieldValueLanguage
dc.contributor.authorLei, ZQen_HK
dc.contributor.authorLi, GJen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorPong, PWTen_HK
dc.contributor.authorEgelhoff Jr, WFen_HK
dc.date.accessioned2011-08-26T14:32:30Z-
dc.date.available2011-08-26T14:32:30Z-
dc.date.issued2010en_HK
dc.identifier.citationThe 2010 IEEE International Conference of Electronic Devices and Solid-State Circuits (EDSSC), Hong Kong, 15-17 December 2010. In Proceedings of EDSSC, 2010, p. 1-4en_HK
dc.identifier.isbn978-1-4244-9996-0-
dc.identifier.urihttp://hdl.handle.net/10722/137732-
dc.description.abstractA magnetically shielded setup was developed for characterizing magnetoresistance (MR) and noise properties of magnetic tunneling junction (MTJ) sensors. A mu-metal shielding is installed to avoid the interference of external magnetic disturbance. Both MR curves and noise power spectra of MTJ sensors can be obtained for further data analysis. Moreover, a hard-axis magnetic field can be applied to eliminate the hysteresis and the linear field response of MTJ sensors can be measured. The preliminary measurement results on MTJ sensors are presented to illustrate the characterization capabilities of this setup. © 2010 IEEE.en_HK
dc.languageengen_US
dc.publisherIEEE.-
dc.relation.ispartofProceedings of the IEEE Conference on Electron Devices and Solid-State Circuitsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsProceedings of the IEEE Conference on Electron Devices and Solid-State Circuits. Copyright © IEEE.-
dc.rights©2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subject1/f noiseen_HK
dc.subjectMangetic tunnel junction (MTJ)en_HK
dc.subjectMeasurement setupen_HK
dc.subjectTunneling magnetoresistance (TMR)en_HK
dc.titleA magnetically shielded instrument for magnetoresistance and noise characterizations of magnetic tunnel junction sensorsen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=978-1-4244-9996-0&volume=&spage=1&epage=4&date=2010&atitle=A+magnetically+shielded+instrument+for+magnetoresistance+and+noise+characterizations+of+magnetic+tunnel+junction+sensors-
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.emailPong, PWT:ppong@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityPong, PWT=rp00217en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/EDSSC.2010.5713688en_HK
dc.identifier.scopuseid_2-s2.0-79952526739en_HK
dc.identifier.hkuros191536en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79952526739&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage1-
dc.identifier.epage4-
dc.description.otherThe 2010 IEEE International Conference of Electronic Devices and Solid-State Circuits (EDSSC), Hong Kong, 15-17 December 2010. In Proceedings of EDSSC, 2010, p. 1-4-
dc.identifier.scopusauthoridLei, ZQ=37002974000en_HK
dc.identifier.scopusauthoridLi, GJ=37002991600en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridPong, PWT=24071267900en_HK
dc.identifier.scopusauthoridEgelhoff Jr, WF=7006151986en_HK

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