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Article: Superlattices of Bi 2Se 3/In 2Se 3: Growth characteristics and structural properties
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TitleSuperlattices of Bi 2Se 3/In 2Se 3: Growth characteristics and structural properties
 
AuthorsWang, ZY1
Guo, X1
Li, HD1 2
Wong, TL3
Wang, N3
Xie, MH1
 
KeywordsEnergy bandgaps
Growth characteristic
Hetero-interfaces
Normal band
Quantum size effects
 
Issue Date2011
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
CitationApplied Physics Letters, 2011, v. 99 n. 2 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3610971
 
AbstractSuperlattices (SLs) consisted of alternating Bi 2Se 3 and In 2Se 3 layers are grown on Si(111) by molecular-beam epitaxy. Bi 2Se 3, a three-dimensional topological insulator (TI), showed good chemical and structural compatibility with In 2Se 3, a normal band insulator with large energy bandgap. The individual layers in the SLs are very uniform, and the hetero-interfaces are sharp. Therefore, such SL structures are potential candidates for explorations of the quantum size effects of TIs. © 2011 American Institute of Physics.
 
ISSN0003-6951
2012 Impact Factor: 3.794
2012 SCImago Journal Rankings: 1.938
 
DOIhttp://dx.doi.org/10.1063/1.3610971
 
ISI Accession Number IDWOS:000292777300054
Funding AgencyGrant Number
Research Grant Council of Hong Kong Special Administrative Region7061/10P
7061/11P
HKU 10/CRF/08
Funding Information:

We wish to thank W. K. Ho and S. Y. Chui for their help in the growth and XRD experiments, respectively. The project is financially supported by General Research Funds (Nos. 7061/10P and 7061/11P) and a Collaborative Research Fund (HKU 10/CRF/08) from the Research Grant Council of Hong Kong Special Administrative Region.

 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorWang, ZY
 
dc.contributor.authorGuo, X
 
dc.contributor.authorLi, HD
 
dc.contributor.authorWong, TL
 
dc.contributor.authorWang, N
 
dc.contributor.authorXie, MH
 
dc.date.accessioned2011-08-26T14:26:17Z
 
dc.date.available2011-08-26T14:26:17Z
 
dc.date.issued2011
 
dc.description.abstractSuperlattices (SLs) consisted of alternating Bi 2Se 3 and In 2Se 3 layers are grown on Si(111) by molecular-beam epitaxy. Bi 2Se 3, a three-dimensional topological insulator (TI), showed good chemical and structural compatibility with In 2Se 3, a normal band insulator with large energy bandgap. The individual layers in the SLs are very uniform, and the hetero-interfaces are sharp. Therefore, such SL structures are potential candidates for explorations of the quantum size effects of TIs. © 2011 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationApplied Physics Letters, 2011, v. 99 n. 2 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3610971
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.3610971
 
dc.identifier.eissn1077-3118
 
dc.identifier.hkuros191354
 
dc.identifier.isiWOS:000292777300054
Funding AgencyGrant Number
Research Grant Council of Hong Kong Special Administrative Region7061/10P
7061/11P
HKU 10/CRF/08
Funding Information:

We wish to thank W. K. Ho and S. Y. Chui for their help in the growth and XRD experiments, respectively. The project is financially supported by General Research Funds (Nos. 7061/10P and 7061/11P) and a Collaborative Research Fund (HKU 10/CRF/08) from the Research Grant Council of Hong Kong Special Administrative Region.

 
dc.identifier.issn0003-6951
2012 Impact Factor: 3.794
2012 SCImago Journal Rankings: 1.938
 
dc.identifier.issue2
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-79960510182
 
dc.identifier.urihttp://hdl.handle.net/10722/137495
 
dc.identifier.volume99
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
dc.publisher.placeUnited States
 
dc.relation.ispartofApplied Physics Letters
 
dc.relation.referencesReferences in Scopus
 
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.rightsCopyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Applied Physics Letters, 2011, v. 99 n. 2 , article no. 023112) and may be found at (http://apl.aip.org/resource/1/applab/v99/i2/p023112_s1).
 
dc.subjectEnergy bandgaps
 
dc.subjectGrowth characteristic
 
dc.subjectHetero-interfaces
 
dc.subjectNormal band
 
dc.subjectQuantum size effects
 
dc.titleSuperlattices of Bi 2Se 3/In 2Se 3: Growth characteristics and structural properties
 
dc.typeArticle
 
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Author Affiliations
  1. The University of Hong Kong
  2. Beijing Jiaotong Daxue
  3. Hong Kong University of Science and Technology