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Article: Correlation between coercive tip bias and domain wall width evolution, and tunable mechanism transition in ferroelectric films

TitleCorrelation between coercive tip bias and domain wall width evolution, and tunable mechanism transition in ferroelectric films
Authors
KeywordsCondensed matter: electrical, magnetic and optical
Issue Date2010
PublisherInstitute of Physics Publishing Ltd.. The Journal's web site is located at http://iopscience.iop.org/0295-5075
Citation
Europhysics Letters, 2010, v. 92 n. 5 How to Cite?
AbstractBased on a modified Kittel's law, a theoretical approach was developed to study the relaxation-driven ferroelectric domain wall width evolution in an inhomogeneous SPM-tip electric field and its dependence on coercive bias. The proposed approach, which is in agreement with both the existing experimental observations and theories, was also employed to investigate the famous phenomenon of ferroelectric domain breakdown (FDB). It has been shown that the domain wall width, which varied slightly in the initial stage but changed drastically subsequently, can influence coercive bias through the linear increase region, unstable region, and nonlinear reducing region. It has also been illustrated that there are possibly three tunable FDB mechanisms in BaTiO 3 films, i.e., absence mode, activation mode, and nonactivation mode. Finally, two possible methods for the realization of the proposed mode-tuning process were suggested. © EPLA, 2010.
Persistent Identifierhttp://hdl.handle.net/10722/137356
ISSN
2015 Impact Factor: 1.963
2015 SCImago Journal Rankings: 0.565
ISI Accession Number ID
Funding AgencyGrant Number
Research Grants Council of the Hong Kong Special Administrative Region, ChinaHKU716007E
716508E
Funding Information:

The authors are grateful for the financial support from the Research Grants Council of the Hong Kong Special Administrative Region, China (Project Nos. HKU716007E and 716508E).

References

 

DC FieldValueLanguage
dc.contributor.authorShi, YPen_HK
dc.contributor.authorSoh, AKen_HK
dc.date.accessioned2011-08-26T14:23:37Z-
dc.date.available2011-08-26T14:23:37Z-
dc.date.issued2010en_HK
dc.identifier.citationEurophysics Letters, 2010, v. 92 n. 5en_HK
dc.identifier.issn0295-5075en_HK
dc.identifier.urihttp://hdl.handle.net/10722/137356-
dc.description.abstractBased on a modified Kittel's law, a theoretical approach was developed to study the relaxation-driven ferroelectric domain wall width evolution in an inhomogeneous SPM-tip electric field and its dependence on coercive bias. The proposed approach, which is in agreement with both the existing experimental observations and theories, was also employed to investigate the famous phenomenon of ferroelectric domain breakdown (FDB). It has been shown that the domain wall width, which varied slightly in the initial stage but changed drastically subsequently, can influence coercive bias through the linear increase region, unstable region, and nonlinear reducing region. It has also been illustrated that there are possibly three tunable FDB mechanisms in BaTiO 3 films, i.e., absence mode, activation mode, and nonactivation mode. Finally, two possible methods for the realization of the proposed mode-tuning process were suggested. © EPLA, 2010.en_HK
dc.languageengen_US
dc.publisherInstitute of Physics Publishing Ltd.. The Journal's web site is located at http://iopscience.iop.org/0295-5075 en_HK
dc.relation.ispartofEurophysics Lettersen_HK
dc.rightsEurophysics Letters. Copyright © Institute of Physics Publishing Ltd..-
dc.subjectCondensed matter: electrical, magnetic and optical-
dc.titleCorrelation between coercive tip bias and domain wall width evolution, and tunable mechanism transition in ferroelectric filmsen_HK
dc.typeArticleen_HK
dc.identifier.emailSoh, AK:aksoh@hkucc.hku.hken_HK
dc.identifier.authoritySoh, AK=rp00170en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1209/0295-5075/92/57006en_HK
dc.identifier.scopuseid_2-s2.0-78650897514en_HK
dc.identifier.hkuros191569en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-78650897514&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume92en_HK
dc.identifier.issue5en_HK
dc.identifier.spage57006p1en_US
dc.identifier.epage57006p5en_US
dc.identifier.isiWOS:000286222700029-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridShi, YP=12345267700en_HK
dc.identifier.scopusauthoridSoh, AK=7006795203en_HK

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