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Article: The effect of atomic vacancies and grain boundaries on mechanical properties of GaN nanowires

TitleThe effect of atomic vacancies and grain boundaries on mechanical properties of GaN nanowires
Authors
Issue Date2011
PublisherZhongguo Wuli Xuehui & Institute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/CPL
Citation
Chinese Physics Letters, 2011, v. 28 n. 6 How to Cite?
AbstractMolecular dynamics simulations are carried out to investigate the influences of various defects on mechanical properties of wurtzite GaN nanowires by adopting the empirical Stillinger-Weber potential. Different types of vacancies and grain boundaries are considered and the uniaxial loading condition is implemented along the [001] direction. It is found that surface defects have less impact on Young's moduli and critical stresses of GaN nanowires compared with random defects. The grain boundary normal to the axial direction of a nanowire would not significantly affect Young's moduli of nanowires. However, the inversion domain grain boundaries with and without wrong bonds would significantly lower Young's moduli of GaN nanowires. In addition, the inversion domain grain boundary affects the critical stress of GaN nanowires more than the grain boundary with interface normal to the axial direction of the nanowire. © 2011 Chinese Physical Society and IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/137350
ISSN
2015 Impact Factor: 0.875
2015 SCImago Journal Rankings: 0.278
ISI Accession Number ID
Funding AgencyGrant Number
National Natural Science Foundation of China10702058
China Postdoctoral Science Foundation20090451100
Funding Information:

Supported by the National Natural Science Foundation of China under Grant No 10702058 and the China Postdoctoral Science Foundation under Grant No 20090451100.

References

 

DC FieldValueLanguage
dc.contributor.authorXie, SFen_HK
dc.contributor.authorChen, SDen_HK
dc.contributor.authorSoh, AKen_HK
dc.date.accessioned2011-08-26T14:23:35Z-
dc.date.available2011-08-26T14:23:35Z-
dc.date.issued2011en_HK
dc.identifier.citationChinese Physics Letters, 2011, v. 28 n. 6en_HK
dc.identifier.issn0256-307Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/137350-
dc.description.abstractMolecular dynamics simulations are carried out to investigate the influences of various defects on mechanical properties of wurtzite GaN nanowires by adopting the empirical Stillinger-Weber potential. Different types of vacancies and grain boundaries are considered and the uniaxial loading condition is implemented along the [001] direction. It is found that surface defects have less impact on Young's moduli and critical stresses of GaN nanowires compared with random defects. The grain boundary normal to the axial direction of a nanowire would not significantly affect Young's moduli of nanowires. However, the inversion domain grain boundaries with and without wrong bonds would significantly lower Young's moduli of GaN nanowires. In addition, the inversion domain grain boundary affects the critical stress of GaN nanowires more than the grain boundary with interface normal to the axial direction of the nanowire. © 2011 Chinese Physical Society and IOP Publishing Ltd.en_HK
dc.languageengen_US
dc.publisherZhongguo Wuli Xuehui & Institute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/CPLen_HK
dc.relation.ispartofChinese Physics Lettersen_HK
dc.titleThe effect of atomic vacancies and grain boundaries on mechanical properties of GaN nanowiresen_HK
dc.typeArticleen_HK
dc.identifier.emailSoh, AK:aksoh@hkucc.hku.hken_HK
dc.identifier.authoritySoh, AK=rp00170en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0256-307X/28/6/066201en_HK
dc.identifier.scopuseid_2-s2.0-79959455515en_HK
dc.identifier.hkuros191563en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79959455515&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume28en_HK
dc.identifier.issue6en_HK
dc.identifier.spage066201en_US
dc.identifier.epage066201en_US
dc.identifier.isiWOS:000291243400055-
dc.publisher.placeChinaen_HK
dc.identifier.scopusauthoridXie, SF=36247873100en_HK
dc.identifier.scopusauthoridChen, SD=36730710000en_HK
dc.identifier.scopusauthoridSoh, AK=7006795203en_HK
dc.identifier.citeulike9408644-

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