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Conference Paper: Coreless PCB-based transformers for power MOSFET/IGBT gate drive circuits

TitleCoreless PCB-based transformers for power MOSFET/IGBT gate drive circuits
Authors
Hui, SYRChung, HTang, SC
KeywordsBipolar Transistors
Electric Drives
Gates (Transistor)
Mosfet Devices
Printed Circuit Boards
Issue Date1997
PublisherIEEE
Citation
Pesc Record - Ieee Annual Power Electronics Specialists Conference, 1997, v. 2, p. 1171-1176 How to Cite?
AbstractGate drive circuits for modern power electronic switches such as MOSFET and IGBT often require electrical isolation. This paper describes initial results of some coreless PCB-based transformers that can be used for MOSFET and IGBT devices at high frequency (500 kHz to 2 MHz) operation. Such transformer substantially reduces the labour cost in winding core-based transformer and simplifies the automation process of gate drive circuits.
Persistent Identifierhttp://hdl.handle.net/10722/136891
ISSN
0275-9306
2019 SCImago Journal Rankings: 0.125

 

DC FieldValueLanguage
dc.contributor.authorHui, SYRen_HK
dc.contributor.authorChung, Hen_HK
dc.contributor.authorTang, SCen_HK
dc.date.accessioned2011-07-29T02:13:21Z-
dc.date.available2011-07-29T02:13:21Z-
dc.date.issued1997en_HK
dc.identifier.citationPesc Record - Ieee Annual Power Electronics Specialists Conference, 1997, v. 2, p. 1171-1176en_HK
dc.identifier.issn0275-9306en_HK
dc.identifier.urihttp://hdl.handle.net/10722/136891-
dc.description.abstractGate drive circuits for modern power electronic switches such as MOSFET and IGBT often require electrical isolation. This paper describes initial results of some coreless PCB-based transformers that can be used for MOSFET and IGBT devices at high frequency (500 kHz to 2 MHz) operation. Such transformer substantially reduces the labour cost in winding core-based transformer and simplifies the automation process of gate drive circuits.en_HK
dc.languageengen_US
dc.publisherIEEEen_US
dc.relation.ispartofPESC Record - IEEE Annual Power Electronics Specialists Conferenceen_HK
dc.subjectBipolar Transistorsen_US
dc.subjectElectric Drivesen_US
dc.subjectGates (Transistor)en_US
dc.subjectMosfet Devicesen_US
dc.subjectPrinted Circuit Boardsen_US
dc.titleCoreless PCB-based transformers for power MOSFET/IGBT gate drive circuitsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailHui, SYR:ronhui@eee.hku.hken_HK
dc.identifier.authorityHui, SYR=rp01510en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0030719846en_HK
dc.identifier.volume2en_HK
dc.identifier.spage1171en_HK
dc.identifier.epage1176en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHui, SYR=7202831744en_HK
dc.identifier.scopusauthoridChung, H=7404007467en_HK
dc.identifier.scopusauthoridTang, SC=24340444700en_HK
dc.identifier.issnl0275-9306-

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