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Article: Surface and edge states in topological semimetals

TitleSurface and edge states in topological semimetals
Authors
KeywordsMesoscale and Nanoscale Physics (cond-mat.mes-hall)
Issue Date2011
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2011, v. 83 n. 7 How to Cite?
AbstractWe study the topologically nontrivial semimetals by means of the six-band Kane model. Existence of surface states is explicitly demonstrated by calculating the local density of states (LDOS) on the material surface. In the strain-free condition, surface states are divided into two parts in the energy spectrum, one part is in the direct gap, the other part including the crossing point of surface state Dirac cone is submerged in the valence band. We also show how uniaxial strain induces an insulating band gap and raises the crossing point from the valence band into the band gap, making the system a true topological insulator. We predict the existence of helical edge states and spin Hall effect in the thin-film topological semimetals, which could be tested by future experiments. Disorder is found to significantly enhance the spin-Hall effect in the valence band of the thin films. © 2011 American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/136766
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU 7037/08P
HKUST3/CRF/09
Hong Kong UGCSEG HKU09
Funding Information:

This work was supported by the Research Grant Council of Hong Kong under Grant Nos. HKU 7037/08P, HKUST3/CRF/09 and in part by a Hong Kong UGC Special Equipment Grant (SEG HKU09).

References
Grants

 

DC FieldValueLanguage
dc.contributor.authorChu, RLen_HK
dc.contributor.authorShan, WYen_HK
dc.contributor.authorLu, Jen_HK
dc.contributor.authorShen, SQen_HK
dc.date.accessioned2011-07-28T08:00:18Z-
dc.date.available2011-07-28T08:00:18Z-
dc.date.issued2011en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2011, v. 83 n. 7en_HK
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/136766-
dc.description.abstractWe study the topologically nontrivial semimetals by means of the six-band Kane model. Existence of surface states is explicitly demonstrated by calculating the local density of states (LDOS) on the material surface. In the strain-free condition, surface states are divided into two parts in the energy spectrum, one part is in the direct gap, the other part including the crossing point of surface state Dirac cone is submerged in the valence band. We also show how uniaxial strain induces an insulating band gap and raises the crossing point from the valence band into the band gap, making the system a true topological insulator. We predict the existence of helical edge states and spin Hall effect in the thin-film topological semimetals, which could be tested by future experiments. Disorder is found to significantly enhance the spin-Hall effect in the valence band of the thin films. © 2011 American Physical Society.en_HK
dc.languageeng-
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsPhysical Review B: Condensed Matter and Materials Physics. Copyright © American Physical Society.-
dc.subjectMesoscale and Nanoscale Physics (cond-mat.mes-hall)-
dc.titleSurface and edge states in topological semimetalsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=83&issue=7, article no. 075110&spage=&epage=&date=2011&atitle=Surface+and+edge+states+in+topological+semimetals-
dc.identifier.emailShen, SQ: sshen@hkucc.hku.hken_HK
dc.identifier.authorityShen, SQ=rp00775en_HK
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1103/PhysRevB.83.075110en_HK
dc.identifier.scopuseid_2-s2.0-79961058199en_HK
dc.identifier.hkuros184989-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79961058199&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume83en_HK
dc.identifier.issue7en_HK
dc.identifier.eissn1550-235x-
dc.identifier.isiWOS:000287393300003-
dc.publisher.placeUnited Statesen_HK
dc.relation.projectQuantum Order in Novel Materials: Superconductivity and Topological Order-
dc.relation.projectQuantum Order in Novel Materials: Superconductivity and Topological Order-
dc.relation.projectQuantum Order in Novel Materials: Superconductivity and Topological Order-
dc.identifier.scopusauthoridChu, RL=25925722300en_HK
dc.identifier.scopusauthoridShan, WY=36093352700en_HK
dc.identifier.scopusauthoridLu, J=16407091300en_HK
dc.identifier.scopusauthoridShen, SQ=7403431266en_HK

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