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Article: Nitrogen doped-ZnO/n-GaN heterojunctions
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TitleNitrogen doped-ZnO/n-GaN heterojunctions
 
AuthorsChen, XY1
Fang, F1
Ng, AMC1
Djurišič, AB1
Cheah, KW2
Ling, CC1
Chan, WK1
Fong, PWK3
Lui, HF3
Surya, C3
 
KeywordsDopant precursors
Growth conditions
Impurity concentration
Native defect
Nitrate precursors
 
Issue Date2011
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
CitationJournal Of Applied Physics, 2011, v. 109 n. 8 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3575178
 
AbstractNitrogen-doped ZnO nanorods were prepared by electrodeposition using two different Zn precursors (zinc nitrate and zinc acetate), while all other growth conditions (dopant precursor, concentration, growth temperature, and bias) were identical. We have shown that the precursor used affects the properties of the ZnO nanorods, and that the presence of rectifying properties in n-GaN/N:ZnO heterojunctions is strongly related to the use of nitrate precursor for ZnO growth. The difference in the properties of ZnO obtained from two precursors is attributed to the differences in native defect and impurity concentrations, which could affect the electronic properties of the samples. © 2011 American Institute of Physics.
 
ISSN0021-8979
2013 Impact Factor: 2.185
 
DOIhttp://dx.doi.org/10.1063/1.3575178
 
ISI Accession Number IDWOS:000290047000181
Funding AgencyGrant Number
Strategic Research Theme
University Development Fund
Small Project Grant
Innovation & Technology FundITS/129/08
Funding Information:

Financial support from the Strategic Research Theme, University Development Fund, Small Project Grant, and Innovation & Technology Fund (Grant No. ITS/129/08) is acknowledged. The authors would like to thank MCPF, Hong Kong University of Science and Technology for SIMS and AES measurements. The authors would like to thank Department of Physics, Chinese University of Hong Kong and Materials Preparation and Characterization Facility, the Hong Kong University of Science and Technology for EELS measurements.

 
ReferencesReferences in Scopus
 
GrantsLight Emitting Diodes Fabricated by Electrochemical Methods
 
DC FieldValue
dc.contributor.authorChen, XY
 
dc.contributor.authorFang, F
 
dc.contributor.authorNg, AMC
 
dc.contributor.authorDjurišič, AB
 
dc.contributor.authorCheah, KW
 
dc.contributor.authorLing, CC
 
dc.contributor.authorChan, WK
 
dc.contributor.authorFong, PWK
 
dc.contributor.authorLui, HF
 
dc.contributor.authorSurya, C
 
dc.date.accessioned2011-07-27T01:34:13Z
 
dc.date.available2011-07-27T01:34:13Z
 
dc.date.issued2011
 
dc.description.abstractNitrogen-doped ZnO nanorods were prepared by electrodeposition using two different Zn precursors (zinc nitrate and zinc acetate), while all other growth conditions (dopant precursor, concentration, growth temperature, and bias) were identical. We have shown that the precursor used affects the properties of the ZnO nanorods, and that the presence of rectifying properties in n-GaN/N:ZnO heterojunctions is strongly related to the use of nitrate precursor for ZnO growth. The difference in the properties of ZnO obtained from two precursors is attributed to the differences in native defect and impurity concentrations, which could affect the electronic properties of the samples. © 2011 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationJournal Of Applied Physics, 2011, v. 109 n. 8 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3575178
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.3575178
 
dc.identifier.hkuros186844
 
dc.identifier.isiWOS:000290047000181
Funding AgencyGrant Number
Strategic Research Theme
University Development Fund
Small Project Grant
Innovation & Technology FundITS/129/08
Funding Information:

Financial support from the Strategic Research Theme, University Development Fund, Small Project Grant, and Innovation & Technology Fund (Grant No. ITS/129/08) is acknowledged. The authors would like to thank MCPF, Hong Kong University of Science and Technology for SIMS and AES measurements. The authors would like to thank Department of Physics, Chinese University of Hong Kong and Materials Preparation and Characterization Facility, the Hong Kong University of Science and Technology for EELS measurements.

 
dc.identifier.issn0021-8979
2013 Impact Factor: 2.185
 
dc.identifier.issue8
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-79955721210
 
dc.identifier.urihttp://hdl.handle.net/10722/135368
 
dc.identifier.volume109
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
dc.publisher.placeUnited States
 
dc.relation.ispartofJournal of Applied Physics
 
dc.relation.projectLight Emitting Diodes Fabricated by Electrochemical Methods
 
dc.relation.referencesReferences in Scopus
 
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.rightsCopyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2011, v. 109 n. 8, article no. 084330) and may be found at (http://jap.aip.org/resource/1/japiau/v109/i8/p084330_s1).
 
dc.subjectDopant precursors
 
dc.subjectGrowth conditions
 
dc.subjectImpurity concentration
 
dc.subjectNative defect
 
dc.subjectNitrate precursors
 
dc.titleNitrogen doped-ZnO/n-GaN heterojunctions
 
dc.typeArticle
 
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Author Affiliations
  1. The University of Hong Kong
  2. Hong Kong Baptist University
  3. Hong Kong Polytechnic University