Article: Nitrogen doped-ZnO/n-GaN heterojunctions

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TitleNitrogen doped-ZnO/n-GaN heterojunctions
AuthorsChen, XY1
Fang, F1
Ng, AMC1
Djurišič, AB1
Cheah, KW2
Ling, CC1
Chan, WK1
Fong, PWK3
Lui, HF3
Surya, C3
KeywordsDopant precursors
Growth conditions
Impurity concentration
Native defect
Nitrate precursors
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
CitationJournal Of Applied Physics, 2011, v. 109 n. 8 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3575178
AbstractNitrogen-doped ZnO nanorods were prepared by electrodeposition using two different Zn precursors (zinc nitrate and zinc acetate), while all other growth conditions (dopant precursor, concentration, growth temperature, and bias) were identical. We have shown that the precursor used affects the properties of the ZnO nanorods, and that the presence of rectifying properties in n-GaN/N:ZnO heterojunctions is strongly related to the use of nitrate precursor for ZnO growth. The difference in the properties of ZnO obtained from two precursors is attributed to the differences in native defect and impurity concentrations, which could affect the electronic properties of the samples. © 2011 American Institute of Physics.
ISSN0021-8979
2011 Impact Factor: 2.168
2011 SCImago Journal Rankings: 0.139
DOIhttp://dx.doi.org/10.1063/1.3575178
ISI Accession Number IDWOS:000290047000181
Funding AgencyGrant Number
Strategic Research Theme
University Development Fund
Small Project Grant
Innovation & Technology FundITS/129/08
Funding Information:

Financial support from the Strategic Research Theme, University Development Fund, Small Project Grant, and Innovation & Technology Fund (Grant No. ITS/129/08) is acknowledged. The authors would like to thank MCPF, Hong Kong University of Science and Technology for SIMS and AES measurements. The authors would like to thank Department of Physics, Chinese University of Hong Kong and Materials Preparation and Characterization Facility, the Hong Kong University of Science and Technology for EELS measurements.

ReferencesReferences in Scopus
GrantsLight Emitting Diodes Fabricated by Electrochemical Methods
DC Field
Value
dc.contributor.authorChen, XY
dc.contributor.authorFang, F
dc.contributor.authorNg, AMC
dc.contributor.authorDjurišič, AB
dc.contributor.authorCheah, KW
dc.contributor.authorLing, CC
dc.contributor.authorChan, WK
dc.contributor.authorFong, PWK
dc.contributor.authorLui, HF
dc.contributor.authorSurya, C
dc.date.accessioned2011-07-27T01:34:13Z
dc.date.available2011-07-27T01:34:13Z
dc.date.issued2011
dc.description.abstractNitrogen-doped ZnO nanorods were prepared by electrodeposition using two different Zn precursors (zinc nitrate and zinc acetate), while all other growth conditions (dopant precursor, concentration, growth temperature, and bias) were identical. We have shown that the precursor used affects the properties of the ZnO nanorods, and that the presence of rectifying properties in n-GaN/N:ZnO heterojunctions is strongly related to the use of nitrate precursor for ZnO growth. The difference in the properties of ZnO obtained from two precursors is attributed to the differences in native defect and impurity concentrations, which could affect the electronic properties of the samples. © 2011 American Institute of Physics.
dc.description.grantLight Emitting Diodes Fabricated by Electrochemical Methods
dc.description.grantcode100446
dc.description.naturepublished_or_final_version
dc.identifier.citationJournal Of Applied Physics, 2011, v. 109 n. 8 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3575178
dc.identifier.doihttp://dx.doi.org/10.1063/1.3575178
dc.identifier.hkuros186844
dc.identifier.isiWOS:000290047000181
Funding AgencyGrant Number
Strategic Research Theme
University Development Fund
Small Project Grant
Innovation & Technology FundITS/129/08
Funding Information:

Financial support from the Strategic Research Theme, University Development Fund, Small Project Grant, and Innovation & Technology Fund (Grant No. ITS/129/08) is acknowledged. The authors would like to thank MCPF, Hong Kong University of Science and Technology for SIMS and AES measurements. The authors would like to thank Department of Physics, Chinese University of Hong Kong and Materials Preparation and Characterization Facility, the Hong Kong University of Science and Technology for EELS measurements.

dc.identifier.issn0021-8979
2011 Impact Factor: 2.168
2011 SCImago Journal Rankings: 0.139
dc.identifier.issue8
dc.identifier.openurl
dc.identifier.scopuseid_2-s2.0-79955721210
dc.identifier.urihttp://hdl.handle.net/10722/135368
dc.identifier.volume109
dc.languageeng
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
dc.publisher.placeUnited States
dc.relation.ispartofJournal of Applied Physics
dc.relation.referencesReferences in Scopus
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
dc.rightsCopyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2011, v. 109 n. 8, article no. 084330) and may be found at (http://jap.aip.org/resource/1/japiau/v109/i8/p084330_s1).
dc.subjectDopant precursors
dc.subjectGrowth conditions
dc.subjectImpurity concentration
dc.subjectNative defect
dc.subjectNitrate precursors
dc.titleNitrogen doped-ZnO/n-GaN heterojunctions
dc.typeArticle
Author Affiliations
  1. The University of Hong Kong
  2. Hong Kong Baptist University
  3. Hong Kong Polytechnic University