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Article: Nitrogen doped-ZnO/n-GaN heterojunctions

TitleNitrogen doped-ZnO/n-GaN heterojunctions
Authors
KeywordsDopant precursors
Growth conditions
Impurity concentration
Native defect
Nitrate precursors
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2011, v. 109 n. 8 How to Cite?
AbstractNitrogen-doped ZnO nanorods were prepared by electrodeposition using two different Zn precursors (zinc nitrate and zinc acetate), while all other growth conditions (dopant precursor, concentration, growth temperature, and bias) were identical. We have shown that the precursor used affects the properties of the ZnO nanorods, and that the presence of rectifying properties in n-GaN/N:ZnO heterojunctions is strongly related to the use of nitrate precursor for ZnO growth. The difference in the properties of ZnO obtained from two precursors is attributed to the differences in native defect and impurity concentrations, which could affect the electronic properties of the samples. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/135368
ISSN
2014 Impact Factor: 2.183
2014 SCImago Journal Rankings: 0.912
ISI Accession Number ID
Funding AgencyGrant Number
Strategic Research Theme
University Development Fund
Small Project Grant
Innovation & Technology FundITS/129/08
Funding Information:

Financial support from the Strategic Research Theme, University Development Fund, Small Project Grant, and Innovation & Technology Fund (Grant No. ITS/129/08) is acknowledged. The authors would like to thank MCPF, Hong Kong University of Science and Technology for SIMS and AES measurements. The authors would like to thank Department of Physics, Chinese University of Hong Kong and Materials Preparation and Characterization Facility, the Hong Kong University of Science and Technology for EELS measurements.

References
Grants

 

DC FieldValueLanguage
dc.contributor.authorChen, XYen_HK
dc.contributor.authorFang, Fen_HK
dc.contributor.authorNg, AMCen_HK
dc.contributor.authorDjurišič, ABen_HK
dc.contributor.authorCheah, KWen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorChan, WKen_HK
dc.contributor.authorFong, PWKen_HK
dc.contributor.authorLui, HFen_HK
dc.contributor.authorSurya, Cen_HK
dc.date.accessioned2011-07-27T01:34:13Z-
dc.date.available2011-07-27T01:34:13Z-
dc.date.issued2011en_HK
dc.identifier.citationJournal Of Applied Physics, 2011, v. 109 n. 8en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/135368-
dc.description.abstractNitrogen-doped ZnO nanorods were prepared by electrodeposition using two different Zn precursors (zinc nitrate and zinc acetate), while all other growth conditions (dopant precursor, concentration, growth temperature, and bias) were identical. We have shown that the precursor used affects the properties of the ZnO nanorods, and that the presence of rectifying properties in n-GaN/N:ZnO heterojunctions is strongly related to the use of nitrate precursor for ZnO growth. The difference in the properties of ZnO obtained from two precursors is attributed to the differences in native defect and impurity concentrations, which could affect the electronic properties of the samples. © 2011 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsCopyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2011, v. 109 n. 8, article no. 084330) and may be found at (http://jap.aip.org/resource/1/japiau/v109/i8/p084330_s1).en_US
dc.subjectDopant precursors-
dc.subjectGrowth conditions-
dc.subjectImpurity concentration-
dc.subjectNative defect-
dc.subjectNitrate precursors-
dc.titleNitrogen doped-ZnO/n-GaN heterojunctionsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=109&issue=8, article no. 084330&spage=&epage=&date=2011&atitle=Nitrogen+doped-ZnO/n-GaN+heterojunctions-
dc.identifier.emailDjurišič, AB: dalek@hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.authorityDjurišič, AB=rp00690en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3575178en_HK
dc.identifier.scopuseid_2-s2.0-79955721210en_HK
dc.identifier.hkuros186844en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79955721210&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume109en_HK
dc.identifier.issue8en_HK
dc.identifier.isiWOS:000290047000181-
dc.publisher.placeUnited Statesen_HK
dc.relation.projectLight Emitting Diodes Fabricated by Electrochemical Methods-
dc.identifier.scopusauthoridChen, XY=36659062700en_HK
dc.identifier.scopusauthoridFang, F=7202929817en_HK
dc.identifier.scopusauthoridNg, AMC=12140078600en_HK
dc.identifier.scopusauthoridDjurišič, AB=7004904830en_HK
dc.identifier.scopusauthoridCheah, KW=7102792922en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.scopusauthoridFong, PWK=24080393500en_HK
dc.identifier.scopusauthoridLui, HF=36815539600en_HK
dc.identifier.scopusauthoridSurya, C=7003939256en_HK

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