Postgraduate Thesis: Molecular beam epitaxial growth of GaN on Si(111) substrate

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TitleMolecular beam epitaxial growth of GaN on Si(111) substrate
AuthorsXu, Zhongjie
徐忠杰
Issue Date2010
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
AdvisorsXie, MH
DegreeMaster of Philosophy
SubjectMolecular beam epitaxy.
Gallium nitride.
Silicon.
Dept/ProgramPhysics
DOIhttp://dx.doi.org/10.5353/th_b4586633
DC Field
Value
dc.contributor.advisorXie, MH
dc.contributor.authorXu, Zhongjie
dc.contributor.author徐忠杰
dc.date.hkucongregation2011
dc.date.issued2010
dc.description.naturepublished_or_final_version
dc.description.thesisdisciplinePhysics
dc.description.thesislevelmaster's
dc.description.thesisnameMaster of Philosophy
dc.identifier.doihttp://dx.doi.org/10.5353/th_b4586633
dc.identifier.hkulb4586633
dc.languageeng
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)
dc.relation.ispartofHKU Theses Online (HKUTO)
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
dc.source.urihttp://hub.hku.hk/bib/B45866338
dc.subject.lcshMolecular beam epitaxy.
dc.subject.lcshGallium nitride.
dc.subject.lcshSilicon.
dc.titleMolecular beam epitaxial growth of GaN on Si(111) substrate
dc.typePG_Thesis