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Postgraduate Thesis: Molecular beam epitaxial growth of GaN on Si(111) substrate
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TitleMolecular beam epitaxial growth of GaN on Si(111) substrate
 
AuthorsXu, Zhongjie
徐忠杰
 
Issue Date2010
 
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
 
AdvisorsXie, MH
 
DegreeMaster of Philosophy
 
SubjectMolecular beam epitaxy.
Gallium nitride.
Silicon.
 
Dept/ProgramPhysics
 
DOIhttp://dx.doi.org/10.5353/th_b4586633
 
DC FieldValue
dc.contributor.advisorXie, MH
 
dc.contributor.authorXu, Zhongjie
 
dc.contributor.author徐忠杰
 
dc.date.hkucongregation2011
 
dc.date.issued2010
 
dc.description.naturepublished_or_final_version
 
dc.description.thesisdisciplinePhysics
 
dc.description.thesislevelmaster's
 
dc.description.thesisnameMaster of Philosophy
 
dc.identifier.doihttp://dx.doi.org/10.5353/th_b4586633
 
dc.identifier.hkulb4586633
 
dc.languageeng
 
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)
 
dc.relation.ispartofHKU Theses Online (HKUTO)
 
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.source.urihttp://hub.hku.hk/bib/B45866338
 
dc.subject.lcshMolecular beam epitaxy.
 
dc.subject.lcshGallium nitride.
 
dc.subject.lcshSilicon.
 
dc.titleMolecular beam epitaxial growth of GaN on Si(111) substrate
 
dc.typePG_Thesis
 
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