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Article: Liquid-immersion laser micromachining of GaN grown on sapphire

TitleLiquid-immersion laser micromachining of GaN grown on sapphire
Authors
KeywordsAblation process
Ablation thresholds
Ambient medium
Cavitation bubble
Device isolation
Issue Date2011
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A: Materials Science And Processing, 2011, v. 102 n. 2, p. 441-447 How to Cite?
AbstractLiquid-immersion nanosecond-pulsed laser micromachining is introduced as an efficient way for device isolation and rapid prototyping on GaN-on-sapphire wafer. Using deionized water as an ambient medium for laser micromachining, smooth trenches that are free from redeposition can be formed in the GaN layer. Coupled with the large difference between the ablation thresholds and ultraviolet absorption coefficients of GaN and sapphire, the GaN/sapphire interface can be left undamaged after the ablation process. This technique overcomes the limitation of heat accumulation in nanosecond-pulse regime, and offers a cost-effective alternative to ultrashort-pulse laser micromachining. In this report, the advantages offered by liquid immersion are elucidated in terms of improved heat conduction, increased plasma-induced recoil pressure due to water confinement, weakened plasma shielding effect in water, and the collapse of cavitation bubbles. Simulation results show that the reduced fluctuation of temperature profile over time in water could be correlated with the reduced redeposition of Ga from thermal decomposition at the trench sidewalls. © 2010 The Author(s).
Persistent Identifierhttp://hdl.handle.net/10722/133821
ISSN
2015 Impact Factor: 1.444
2015 SCImago Journal Rankings: 0.535
ISI Accession Number ID
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU 7118/09E
Funding Information:

This work was supported by a GRF grant of the Research Grant Council of Hong Kong (project HKU 7118/09E).

References

 

DC FieldValueLanguage
dc.contributor.authorMak, GYen_HK
dc.contributor.authorLam, EYen_HK
dc.contributor.authorChoi, HWen_HK
dc.date.accessioned2011-05-31T06:45:24Z-
dc.date.available2011-05-31T06:45:24Z-
dc.date.issued2011en_HK
dc.identifier.citationApplied Physics A: Materials Science And Processing, 2011, v. 102 n. 2, p. 441-447en_HK
dc.identifier.issn0947-8396en_HK
dc.identifier.urihttp://hdl.handle.net/10722/133821-
dc.description.abstractLiquid-immersion nanosecond-pulsed laser micromachining is introduced as an efficient way for device isolation and rapid prototyping on GaN-on-sapphire wafer. Using deionized water as an ambient medium for laser micromachining, smooth trenches that are free from redeposition can be formed in the GaN layer. Coupled with the large difference between the ablation thresholds and ultraviolet absorption coefficients of GaN and sapphire, the GaN/sapphire interface can be left undamaged after the ablation process. This technique overcomes the limitation of heat accumulation in nanosecond-pulse regime, and offers a cost-effective alternative to ultrashort-pulse laser micromachining. In this report, the advantages offered by liquid immersion are elucidated in terms of improved heat conduction, increased plasma-induced recoil pressure due to water confinement, weakened plasma shielding effect in water, and the collapse of cavitation bubbles. Simulation results show that the reduced fluctuation of temperature profile over time in water could be correlated with the reduced redeposition of Ga from thermal decomposition at the trench sidewalls. © 2010 The Author(s).en_HK
dc.languageengen_US
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_HK
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_HK
dc.rightsThe Author(s)en_US
dc.rightsThe original publication is available at www.springerlink.com-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectAblation process-
dc.subjectAblation thresholds-
dc.subjectAmbient medium-
dc.subjectCavitation bubble-
dc.subjectDevice isolation-
dc.titleLiquid-immersion laser micromachining of GaN grown on sapphireen_HK
dc.typeArticleen_HK
dc.identifier.emailLam, EY:elam@eee.hku.hken_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityLam, EY=rp00131en_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1007/s00339-010-6169-zen_HK
dc.identifier.scopuseid_2-s2.0-79651471474en_HK
dc.identifier.hkuros186764-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79651471474&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume102en_HK
dc.identifier.issue2en_HK
dc.identifier.spage441en_HK
dc.identifier.epage447en_HK
dc.identifier.eissn1432-0630en_US
dc.identifier.isiWOS:000286828000029-
dc.publisher.placeGermanyen_HK
dc.description.otherSpringer Open Choice, 31 May 2011en_US
dc.identifier.scopusauthoridMak, GY=8678365200en_HK
dc.identifier.scopusauthoridLam, EY=7102890004en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK

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