File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Electroresistance and field effects in epitaxial thin films of Pr 0.7Sr0.3MnO3

TitleElectroresistance and field effects in epitaxial thin films of Pr 0.7Sr0.3MnO3
Authors
KeywordsCarrier spins
Electroresistance
Epitaxial thin films
Field effects
Field modulation
Issue Date2010
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A: Materials Science & Processing, 2010, v. 101 n. 4, p. 661-664 How to Cite?
AbstractHighly epitaxial thin films of Pr0.7Sr0.3MnO 3 were grown on (100) SrTiO3 single crystal substrates by laser ablation. Similar to other manganite compounds, these Pr 0.7Sr0.3MnO3 films exhibited remarkable magnetoresistance. Application of electric currents could induce a remarkable reduction in resistivity, demonstrating a strong electroresistance effect. The ratio of the resistance variation, ER=[R(0)-R(I)]/R(I), is about 33% at metal-insulator transition temperature. Using a planar field effect configuration, significant field modulation of the metal-insulator transition was achieved. The observed field effects were discussed based on the strong interactions between carrier spins and localized spins in Mn ions, as well as the percolative mechanism of phase separation. © 2010 The Author(s).
Persistent Identifierhttp://hdl.handle.net/10722/133820
ISSN
2015 Impact Factor: 1.444
2015 SCImago Journal Rankings: 0.535
ISI Accession Number ID
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU 7024/07P
Funding Information:

This work has been supported by a grant of the Research Grant Council of Hong Kong (Project No. HKU 7024/07P).

 

DC FieldValueLanguage
dc.contributor.authorGao, Jen_US
dc.contributor.authorLiu, HYen_US
dc.date.accessioned2011-05-31T07:23:13Z-
dc.date.available2011-05-31T07:23:13Z-
dc.date.issued2010en_US
dc.identifier.citationApplied Physics A: Materials Science & Processing, 2010, v. 101 n. 4, p. 661-664-
dc.identifier.issn0947-8396en_US
dc.identifier.urihttp://hdl.handle.net/10722/133820-
dc.description.abstractHighly epitaxial thin films of Pr0.7Sr0.3MnO 3 were grown on (100) SrTiO3 single crystal substrates by laser ablation. Similar to other manganite compounds, these Pr 0.7Sr0.3MnO3 films exhibited remarkable magnetoresistance. Application of electric currents could induce a remarkable reduction in resistivity, demonstrating a strong electroresistance effect. The ratio of the resistance variation, ER=[R(0)-R(I)]/R(I), is about 33% at metal-insulator transition temperature. Using a planar field effect configuration, significant field modulation of the metal-insulator transition was achieved. The observed field effects were discussed based on the strong interactions between carrier spins and localized spins in Mn ions, as well as the percolative mechanism of phase separation. © 2010 The Author(s).en_US
dc.languageengen_US
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_US
dc.relation.ispartofApplied Physics A: Materials Science & Processingen_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsThe original publication is available at www.springerlink.comen_US
dc.subjectCarrier spins-
dc.subjectElectroresistance-
dc.subjectEpitaxial thin films-
dc.subjectField effects-
dc.subjectField modulation-
dc.titleElectroresistance and field effects in epitaxial thin films of Pr 0.7Sr0.3MnO3en_US
dc.typeArticleen_US
dc.identifier.emailGao, J: jugao@hku.hk-
dc.identifier.emailLiu, HY: liuheyan@hku.hk-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1007/s00339-010-5920-9en_US
dc.identifier.scopuseid_2-s2.0-78650591902-
dc.identifier.hkuros196814-
dc.identifier.volume101en_US
dc.identifier.issue4en_US
dc.identifier.spage661en_US
dc.identifier.epage664en_US
dc.identifier.isiWOS:000285195300015-
dc.publisher.placeGermany-
dc.description.otherSpringer Open Choice, 31 May 2011en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats