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Article: Temperature dependence of resistive switching in aluminum/anodized aluminum film structure

TitleTemperature dependence of resistive switching in aluminum/anodized aluminum film structure
Authors
KeywordsAnodized Aluminum Thin Film
Current Transport
Resistance Random Access Memory
Resistive Switching
Temperature Dependence
Issue Date2011
PublisherAmerican Scientific Publishers. The Journal's web site is located at http://www.aspbs.com/nnl/
Citation
Nanoscience And Nanotechnology Letters, 2011, v. 3 n. 2, p. 222-225 How to Cite?
AbstractResistive switching in anodized aluminum thin film structure and its temperature dependence have been studied in this work. A lower reset voltage (V reset)/set voltage (V set) was observed at an elevated temperature, suggesting that the conductive filaments were formed or ruptured more easily at a higher temperature. The carrier transport mechanisms were examined also. At low fields (V reset), other conduction mechanisms including the Schottky emission and the Poole-Frenkel emission were involved in the current conduction. Copyright © 2011 American Scientific Publishers.
Persistent Identifierhttp://hdl.handle.net/10722/133646
ISSN
2015 Impact Factor: 1.007
2015 SCImago Journal Rankings: 0.292
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZhu, Wen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorYang, Men_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2011-05-24T02:13:14Z-
dc.date.available2011-05-24T02:13:14Z-
dc.date.issued2011en_HK
dc.identifier.citationNanoscience And Nanotechnology Letters, 2011, v. 3 n. 2, p. 222-225en_HK
dc.identifier.issn1941-4900en_HK
dc.identifier.urihttp://hdl.handle.net/10722/133646-
dc.description.abstractResistive switching in anodized aluminum thin film structure and its temperature dependence have been studied in this work. A lower reset voltage (V reset)/set voltage (V set) was observed at an elevated temperature, suggesting that the conductive filaments were formed or ruptured more easily at a higher temperature. The carrier transport mechanisms were examined also. At low fields (<V reset), both the low-resistance state (LRS) and high-resistance state (HRS) showed ohmic conduction at both room temperature and elevated temperatures up to 100 °C. The ohmic conduction of the LRS is due to the metallic conduction paths formed by the high concentration of aluminum inside the dielectric layer, while the ohmic conduction of the HRS is attributed to the hopping of thermally excited electrons from one isolated state to the next. At high fields (>V reset), other conduction mechanisms including the Schottky emission and the Poole-Frenkel emission were involved in the current conduction. Copyright © 2011 American Scientific Publishers.en_HK
dc.languageengen_US
dc.publisherAmerican Scientific Publishers. The Journal's web site is located at http://www.aspbs.com/nnl/en_HK
dc.relation.ispartofNanoscience and Nanotechnology Lettersen_HK
dc.subjectAnodized Aluminum Thin Filmen_HK
dc.subjectCurrent Transporten_HK
dc.subjectResistance Random Access Memoryen_HK
dc.subjectResistive Switchingen_HK
dc.subjectTemperature Dependenceen_HK
dc.titleTemperature dependence of resistive switching in aluminum/anodized aluminum film structureen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1941-4900&volume=3&spage=222&epage=225&date=2011&atitle=Temperature+dependence+of+resistive+switching+in+aluminum/anodized+aluminum+film+structure-
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1166/nnl.2011.1157en_HK
dc.identifier.scopuseid_2-s2.0-79952714376en_HK
dc.identifier.hkuros185383en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79952714376&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume3en_HK
dc.identifier.issue2en_HK
dc.identifier.spage222en_HK
dc.identifier.epage225en_HK
dc.identifier.isiWOS:000293211300021-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZhu, W=7404232937en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridYang, M=24464683100en_HK
dc.identifier.scopusauthoridLiu, Y=36063639400en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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