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Article: Indium tin oxide nanorod electrodes for polymer photovoltaics

TitleIndium tin oxide nanorod electrodes for polymer photovoltaics
Authors
Fung, MKSun, YCNg, ANg, AMCDjurisic, ABChan, HTChan, WK
KeywordsIndium tin oxide
Nanorods
e-beam deposition
Sputtering
Polymer solar cells
Issue Date2011
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/aamick
Citation
A C S Applied Materials and Interfaces, 2011, v. 3 n. 2, p. 522-527 How to Cite?
DOI: http://dx.doi.org/10.1021/am101097d
AbstractWe have deposited indium tin oxide (ITO) nanorods on glass and glass/ITO substrates by DC sputtering and by e-beam deposition. The properties of the nanorods deposited by different methods and on different substrates have been investigated. The ITO nanorods were also used as an electrode in bulk heterojunction polymer solar cells. We found that the nanorod morphology and sheet resistance had a significant effect on the solar cell performance, with significant improvements in the efficiency compared to commercial ITO film substrates in all cases except for e-beam deposited nanorods on glass that had high sheet resistance. The best power conversion efficiency achieved was 3.2 % (for sputtered ITO nanorods on ITO), compared to 2.1 % for commercial ITO substrates.
Persistent Identifierhttp://hdl.handle.net/10722/133326
ISSN
1944-8244
2023 Impact Factor: 8.3
2023 SCImago Journal Rankings: 2.058
ISI Accession Number ID
WOS:000287639400058
Funding AgencyGrant Number
Strategic Research Theme
University Development Fund
University of Hong Kong
Funding Information:

Financial support from the Strategic Research Theme, University Development Fund, and Small Project Funding of the University of Hong Kong is acknowledged. The authors thank Prof: M. H. Xie for useful discussions.

 

DC FieldValueLanguage
dc.contributor.authorFung, MKen_US
dc.contributor.authorSun, YCen_US
dc.contributor.authorNg, Aen_US
dc.contributor.authorNg, AMCen_US
dc.contributor.authorDjurisic, ABen_US
dc.contributor.authorChan, HTen_US
dc.contributor.authorChan, WKen_US
dc.date.accessioned2011-05-11T08:31:33Z-
dc.date.available2011-05-11T08:31:33Z-
dc.date.issued2011en_US
dc.identifier.citationA C S Applied Materials and Interfaces, 2011, v. 3 n. 2, p. 522-527en_US
dc.identifier.issn1944-8244en_US
dc.identifier.urihttp://hdl.handle.net/10722/133326-
dc.description.abstractWe have deposited indium tin oxide (ITO) nanorods on glass and glass/ITO substrates by DC sputtering and by e-beam deposition. The properties of the nanorods deposited by different methods and on different substrates have been investigated. The ITO nanorods were also used as an electrode in bulk heterojunction polymer solar cells. We found that the nanorod morphology and sheet resistance had a significant effect on the solar cell performance, with significant improvements in the efficiency compared to commercial ITO film substrates in all cases except for e-beam deposited nanorods on glass that had high sheet resistance. The best power conversion efficiency achieved was 3.2 % (for sputtered ITO nanorods on ITO), compared to 2.1 % for commercial ITO substrates.-
dc.languageengen_US
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/aamicken_US
dc.relation.ispartofA C S Applied Materials and Interfacesen_US
dc.subjectIndium tin oxide-
dc.subjectNanorods-
dc.subjecte-beam deposition-
dc.subjectSputtering-
dc.subjectPolymer solar cells-
dc.titleIndium tin oxide nanorod electrodes for polymer photovoltaicsen_US
dc.typeArticleen_US
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1944-8244&volume=3&issue=2&spage=522&epage=527&date=2011&atitle=Indium+tin+oxide+nanorod+electrodes+for+polymer+photovoltaicsen_US
dc.identifier.emailNg, AMC: alanalfa@hku.hken_US
dc.identifier.emailDjurisic, AB: dalek@hku.hken_US
dc.identifier.emailChan, HT: h0407038@graduate.hku.hken_US
dc.identifier.emailChan, WK: waichan@hku.hken_US
dc.identifier.authorityDjurisic, AB=rp00690en_US
dc.identifier.authorityChan, WK=rp00667en_US
dc.identifier.doi10.1021/am101097d-
dc.identifier.pmid21299203-
dc.identifier.scopuseid_2-s2.0-84862833239-
dc.identifier.hkuros184758en_US
dc.identifier.volume3en_US
dc.identifier.issue2-
dc.identifier.spage522en_US
dc.identifier.epage527en_US
dc.identifier.isiWOS:000287639400058-
dc.identifier.issnl1944-8244-

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