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Article: Resistivity of thin Cu films with surface roughness

TitleResistivity of thin Cu films with surface roughness
Authors
Ke, YZahid, FTimoshevskii, VXia, KGall, DGuo, H
Issue Date2009
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter and Materials Physics), 2009, v. 79 n. 15, article no. 155406 How to Cite?
DOI: http://dx.doi.org/10.1103/PhysRevB.79.155406
AbstractWe present an atomistic first-principles calculation of resistivity induced by atomically rough surfaces of thin Cu films. Our calculations show that the resistivity increases significantly due to surface roughness scattering and it is quite sensitive to both the amount and the nature of roughness. We determine the degree of specular scattering at rough surfaces by a parameter p which is obtained by fitting the ab initio data to the well-known Fuchs-Sondheimer model for surface scattering of thin metal films. In particular, we have obtained the p=p (x) curve, where (1-x) is the concentration of the rough sites on the Cu surface. © 2009 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/132523
ISSN
1098-0121
2014 Impact Factor: 3.736
ISI Accession Number ID
WOS:000265944200095
Funding AgencyGrant Number
Semiconductor Research Corporation through the Center for Advanced Interconnect Systems Technologies1292.036
NSERC of Canada
Canadian Institute for Advanced Research
Funding Information:

This work is supported by Semiconductor Research Corporation through the Center for Advanced Interconnect Systems Technologies under Contract No. 1292.036. H. G. gratefully acknowledges financial support from NSERC of Canada and Canadian Institute for Advanced Research. We are grateful to RQCHP for providing the computational resources.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorKe, Yen_HK
dc.contributor.authorZahid, Fen_HK
dc.contributor.authorTimoshevskii, Ven_HK
dc.contributor.authorXia, Ken_HK
dc.contributor.authorGall, Den_HK
dc.contributor.authorGuo, Hen_HK
dc.date.accessioned2011-03-28T09:25:48Z-
dc.date.available2011-03-28T09:25:48Z-
dc.date.issued2009en_HK
dc.identifier.citationPhysical Review B (Condensed Matter and Materials Physics), 2009, v. 79 n. 15, article no. 155406-
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/132523-
dc.description.abstractWe present an atomistic first-principles calculation of resistivity induced by atomically rough surfaces of thin Cu films. Our calculations show that the resistivity increases significantly due to surface roughness scattering and it is quite sensitive to both the amount and the nature of roughness. We determine the degree of specular scattering at rough surfaces by a parameter p which is obtained by fitting the ab initio data to the well-known Fuchs-Sondheimer model for surface scattering of thin metal films. In particular, we have obtained the p=p (x) curve, where (1-x) is the concentration of the rough sites on the Cu surface. © 2009 The American Physical Society.en_HK
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B (Condensed Matter and Materials Physics)-
dc.titleResistivity of thin Cu films with surface roughnessen_HK
dc.typeArticleen_HK
dc.identifier.emailZahid, F: fzahid@hku.hken_HK
dc.identifier.authorityZahid, F=rp01472en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1103/PhysRevB.79.155406en_HK
dc.identifier.scopuseid_2-s2.0-65149093187en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-65149093187&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume79en_HK
dc.identifier.issue15en_HK
dc.identifier.spagearticle no. 155406-
dc.identifier.epagearticle no. 155406-
dc.identifier.eissn1550-235X-
dc.identifier.isiWOS:000265944200095-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridKe, Y=24080440500en_HK
dc.identifier.scopusauthoridZahid, F=8568996000en_HK
dc.identifier.scopusauthoridTimoshevskii, V=6602297399en_HK
dc.identifier.scopusauthoridXia, K=7101891170en_HK
dc.identifier.scopusauthoridGall, D=7102060628en_HK
dc.identifier.scopusauthoridGuo, H=16236337600en_HK
dc.identifier.issnl1098-0121-

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