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Article: Resistivity of thin Cu films coated with Ta, Ti, Ru, Al, and Pd barrier layers from first principles

TitleResistivity of thin Cu films coated with Ta, Ti, Ru, Al, and Pd barrier layers from first principles
Authors
Issue Date2010
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2010, v. 81 n. 4 How to Cite?
AbstractWe present an atomistic first-principles calculation for the resistivity of rough Cu thin films coated with barrier layers of Ta, Ti, Ru, Al, and Pd. A significant difference in resistivity due to different barrier metals is found. Ti, Ta, and Ru barriers increase the resistivity whereas Al and Pd lower the resistivity, in comparison with that of bare Cu films having the same degree of roughness disorder. It is found that Al/Pd barrier atoms produce density of states (DOS) that match rather well with the DOS of Cu atoms on a Cu film with a perfectly flat surface while the DOS of Ti, Ta, and Ru do not match. Our results suggest that the geometrical roughness on the Cu film that causes diffuse scattering, can be "smoothed" out electronically by certain barriers such that the surface scattering becomes more specular. © 2010 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/132521
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID
Funding AgencyGrant Number
Semiconductor Research Corporation1292.036
NSERC of Canada
Canadian Institute for Advanced Research
Funding Information:

This work is supported by the Semiconductor Research Corporation through the Center for Advanced Interconnect Systems Technologies under Contract No. 1292.036. H. G. gratefully acknowledges financial support from NSERC of Canada and Canadian Institute for Advanced Research. We are grateful to RQCHP for providing the computational resources. We thank Ji Wei for his valuable support with the VASP calculations discussed here.

References

 

DC FieldValueLanguage
dc.contributor.authorZahid, Fen_HK
dc.contributor.authorKe, Yen_HK
dc.contributor.authorGall, Den_HK
dc.contributor.authorGuo, Hen_HK
dc.date.accessioned2011-03-28T09:25:47Z-
dc.date.available2011-03-28T09:25:47Z-
dc.date.issued2010en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2010, v. 81 n. 4en_HK
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/132521-
dc.description.abstractWe present an atomistic first-principles calculation for the resistivity of rough Cu thin films coated with barrier layers of Ta, Ti, Ru, Al, and Pd. A significant difference in resistivity due to different barrier metals is found. Ti, Ta, and Ru barriers increase the resistivity whereas Al and Pd lower the resistivity, in comparison with that of bare Cu films having the same degree of roughness disorder. It is found that Al/Pd barrier atoms produce density of states (DOS) that match rather well with the DOS of Cu atoms on a Cu film with a perfectly flat surface while the DOS of Ti, Ta, and Ru do not match. Our results suggest that the geometrical roughness on the Cu film that causes diffuse scattering, can be "smoothed" out electronically by certain barriers such that the surface scattering becomes more specular. © 2010 The American Physical Society.en_HK
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.titleResistivity of thin Cu films coated with Ta, Ti, Ru, Al, and Pd barrier layers from first principlesen_HK
dc.typeArticleen_HK
dc.identifier.emailZahid, F: fzahid@hku.hken_HK
dc.identifier.authorityZahid, F=rp01472en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1103/PhysRevB.81.045406en_HK
dc.identifier.scopuseid_2-s2.0-77954830121en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77954830121&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume81en_HK
dc.identifier.issue4en_HK
dc.identifier.eissn1550-235X-
dc.identifier.isiWOS:000274002500088-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZahid, F=8568996000en_HK
dc.identifier.scopusauthoridKe, Y=24080440500en_HK
dc.identifier.scopusauthoridGall, D=7102060628en_HK
dc.identifier.scopusauthoridGuo, H=16236337600en_HK

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