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Article: A new system design for the preparation of copper/activated carbon catalyst by metal-organic chemical vapor deposition method

TitleA new system design for the preparation of copper/activated carbon catalyst by metal-organic chemical vapor deposition method
Authors
KeywordsCatalysis
Catalyst support
MOCVD
Porous media
SEM-EDX
Issue Date2003
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/ces
Citation
Chemical Engineering Science, 2003, v. 58 n. 3-6, p. 687-695 How to Cite?
AbstractA metal-organic chemical vapor deposition (MOCVD) technique was used to prepare heterogeneous metallic catalyst supported on activated carbon. A new system design was built to achieve higher metal loading within a shorter preparation time. In the optimization of system parameters, higher metal loading can be achieved by using longer deposition time, optimum carrier gas flow rate, higher operating temperature of either evaporation zone or a deposition zone or a smaller amount of porous support. Several techniques were carried out to characterize the catalyst such as physisorption, X-ray diffraction, inductively coupled plasma-optical emission spectroscopy and scanning electronic microscopy assisted with the Energy dispersive X-ray spectroscopy (SEM-EDX). It was found that the BET specific surface area and total adsorption volume of the prepared catalysts were reduced after metal deposition, due to the formation of the deposited copper onto the porous media both externally and internally. The morphology of the cylindrical Cu/AC was analyzed by SEM-EDX. The results show that the metal was deposited with a reasonably uniform distribution onto the inner part of the porous support. © 2003 Elsevier Science Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/132390
ISSN
2015 Impact Factor: 2.75
2015 SCImago Journal Rankings: 1.073
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLam, FLYen_HK
dc.contributor.authorHu, Xen_HK
dc.date.accessioned2011-03-28T09:23:56Z-
dc.date.available2011-03-28T09:23:56Z-
dc.date.issued2003en_HK
dc.identifier.citationChemical Engineering Science, 2003, v. 58 n. 3-6, p. 687-695en_HK
dc.identifier.issn0009-2509en_HK
dc.identifier.urihttp://hdl.handle.net/10722/132390-
dc.description.abstractA metal-organic chemical vapor deposition (MOCVD) technique was used to prepare heterogeneous metallic catalyst supported on activated carbon. A new system design was built to achieve higher metal loading within a shorter preparation time. In the optimization of system parameters, higher metal loading can be achieved by using longer deposition time, optimum carrier gas flow rate, higher operating temperature of either evaporation zone or a deposition zone or a smaller amount of porous support. Several techniques were carried out to characterize the catalyst such as physisorption, X-ray diffraction, inductively coupled plasma-optical emission spectroscopy and scanning electronic microscopy assisted with the Energy dispersive X-ray spectroscopy (SEM-EDX). It was found that the BET specific surface area and total adsorption volume of the prepared catalysts were reduced after metal deposition, due to the formation of the deposited copper onto the porous media both externally and internally. The morphology of the cylindrical Cu/AC was analyzed by SEM-EDX. The results show that the metal was deposited with a reasonably uniform distribution onto the inner part of the porous support. © 2003 Elsevier Science Ltd. All rights reserved.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/cesen_HK
dc.relation.ispartofChemical Engineering Scienceen_HK
dc.subjectCatalysisen_HK
dc.subjectCatalyst supporten_HK
dc.subjectMOCVDen_HK
dc.subjectPorous mediaen_HK
dc.subjectSEM-EDXen_HK
dc.titleA new system design for the preparation of copper/activated carbon catalyst by metal-organic chemical vapor deposition methoden_HK
dc.typeArticleen_HK
dc.identifier.emailLam, FLY:kefrank@hku.hken_HK
dc.identifier.authorityLam, FLY=rp01470en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0009-2509(02)00596-1en_HK
dc.identifier.scopuseid_2-s2.0-0037292919en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037292919&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume58en_HK
dc.identifier.issue3-6en_HK
dc.identifier.spage687en_HK
dc.identifier.epage695en_HK
dc.identifier.isiWOS:000181575600021-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLam, FLY=7102075931en_HK
dc.identifier.scopusauthoridHu, X=7404709975en_HK

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