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Article: Fabrication of copper nanowire encapsulated in the pore channels of SBA-15 by metal organic chemical vapor deposition
Title | Fabrication of copper nanowire encapsulated in the pore channels of SBA-15 by metal organic chemical vapor deposition |
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Authors | |
Keywords | Carbon Copper Encapsulation Low Temperature Effects Metallorganic Chemical Vapor Deposition Organometallics Reducing Agents Synthesis (Chemical) |
Issue Date | 2007 |
Publisher | American Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/jpccck/ |
Citation | Journal Of Physical Chemistry C, 2007, v. 111 n. 34, p. 12536-12541 How to Cite? |
Abstract | Copper nanowires encapsulated in 6-nm pore channels of SBA-15 were synthesized by metal organic chemical vapor deposition at a low temperature in this study. It was found that chemically modifying the SBA pore surface by carbon deposition helps to synthesize better quality copper nanostructures in the pore channels of SBA-15. More importantly, using hydrogen as a reducing agent and carrier gas can produce significantly improved copper nanowires encapsulated in SBA-15. This enhancement is due to the chemical decomposition and reduction of organometallic precursor (copper(II) acetylacetonate) into smaller fragments that can more easily penetrate the interior of the SBA-15 porous structure. The dimensions of the encapsulated metal nanowire can be tailored by using different pore-sized substrates. This is the first time tuned copper nanowires encapsulated in the nanopore channels of well-defined porous structure have been synthesized under mild conditions. © 2007 American Chemical Society. |
Persistent Identifier | http://hdl.handle.net/10722/132380 |
ISSN | 2023 Impact Factor: 3.3 2023 SCImago Journal Rankings: 0.957 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Zhang, Y | en_HK |
dc.contributor.author | Lam, FLY | en_HK |
dc.contributor.author | Hu, X | en_HK |
dc.contributor.author | Yan, Z | en_HK |
dc.contributor.author | Sheng, P | en_HK |
dc.date.accessioned | 2011-03-28T09:23:52Z | - |
dc.date.available | 2011-03-28T09:23:52Z | - |
dc.date.issued | 2007 | en_HK |
dc.identifier.citation | Journal Of Physical Chemistry C, 2007, v. 111 n. 34, p. 12536-12541 | en_HK |
dc.identifier.issn | 1932-7447 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/132380 | - |
dc.description.abstract | Copper nanowires encapsulated in 6-nm pore channels of SBA-15 were synthesized by metal organic chemical vapor deposition at a low temperature in this study. It was found that chemically modifying the SBA pore surface by carbon deposition helps to synthesize better quality copper nanostructures in the pore channels of SBA-15. More importantly, using hydrogen as a reducing agent and carrier gas can produce significantly improved copper nanowires encapsulated in SBA-15. This enhancement is due to the chemical decomposition and reduction of organometallic precursor (copper(II) acetylacetonate) into smaller fragments that can more easily penetrate the interior of the SBA-15 porous structure. The dimensions of the encapsulated metal nanowire can be tailored by using different pore-sized substrates. This is the first time tuned copper nanowires encapsulated in the nanopore channels of well-defined porous structure have been synthesized under mild conditions. © 2007 American Chemical Society. | en_HK |
dc.language | eng | en_US |
dc.publisher | American Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/jpccck/ | en_HK |
dc.relation.ispartof | Journal of Physical Chemistry C | en_HK |
dc.subject | Carbon | en_US |
dc.subject | Copper | en_US |
dc.subject | Encapsulation | en_US |
dc.subject | Low Temperature Effects | en_US |
dc.subject | Metallorganic Chemical Vapor Deposition | en_US |
dc.subject | Organometallics | en_US |
dc.subject | Reducing Agents | en_US |
dc.subject | Synthesis (Chemical) | en_US |
dc.title | Fabrication of copper nanowire encapsulated in the pore channels of SBA-15 by metal organic chemical vapor deposition | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Lam, FLY:kefrank@hku.hk | en_HK |
dc.identifier.authority | Lam, FLY=rp01470 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1021/jp073786x | en_HK |
dc.identifier.scopus | eid_2-s2.0-34548574936 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-34548574936&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 111 | en_HK |
dc.identifier.issue | 34 | en_HK |
dc.identifier.spage | 12536 | en_HK |
dc.identifier.epage | 12541 | en_HK |
dc.identifier.eissn | 1932-7455 | - |
dc.identifier.isi | WOS:000248929100009 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Zhang, Y=13806862100 | en_HK |
dc.identifier.scopusauthorid | Lam, FLY=7102075931 | en_HK |
dc.identifier.scopusauthorid | Hu, X=7404709975 | en_HK |
dc.identifier.scopusauthorid | Yan, Z=7402519855 | en_HK |
dc.identifier.scopusauthorid | Sheng, P=7102390217 | en_HK |
dc.identifier.issnl | 1932-7447 | - |