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Article: Fabrication of copper nanowire encapsulated in the pore channels of SBA-15 by metal organic chemical vapor deposition

TitleFabrication of copper nanowire encapsulated in the pore channels of SBA-15 by metal organic chemical vapor deposition
Authors
KeywordsCarbon
Copper
Encapsulation
Low Temperature Effects
Metallorganic Chemical Vapor Deposition
Organometallics
Reducing Agents
Synthesis (Chemical)
Issue Date2007
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/jpccck/
Citation
Journal Of Physical Chemistry C, 2007, v. 111 n. 34, p. 12536-12541 How to Cite?
AbstractCopper nanowires encapsulated in 6-nm pore channels of SBA-15 were synthesized by metal organic chemical vapor deposition at a low temperature in this study. It was found that chemically modifying the SBA pore surface by carbon deposition helps to synthesize better quality copper nanostructures in the pore channels of SBA-15. More importantly, using hydrogen as a reducing agent and carrier gas can produce significantly improved copper nanowires encapsulated in SBA-15. This enhancement is due to the chemical decomposition and reduction of organometallic precursor (copper(II) acetylacetonate) into smaller fragments that can more easily penetrate the interior of the SBA-15 porous structure. The dimensions of the encapsulated metal nanowire can be tailored by using different pore-sized substrates. This is the first time tuned copper nanowires encapsulated in the nanopore channels of well-defined porous structure have been synthesized under mild conditions. © 2007 American Chemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/132380
ISSN
2015 Impact Factor: 4.509
2015 SCImago Journal Rankings: 1.995
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZhang, Yen_HK
dc.contributor.authorLam, FLYen_HK
dc.contributor.authorHu, Xen_HK
dc.contributor.authorYan, Zen_HK
dc.contributor.authorSheng, Pen_HK
dc.date.accessioned2011-03-28T09:23:52Z-
dc.date.available2011-03-28T09:23:52Z-
dc.date.issued2007en_HK
dc.identifier.citationJournal Of Physical Chemistry C, 2007, v. 111 n. 34, p. 12536-12541en_HK
dc.identifier.issn1932-7447en_HK
dc.identifier.urihttp://hdl.handle.net/10722/132380-
dc.description.abstractCopper nanowires encapsulated in 6-nm pore channels of SBA-15 were synthesized by metal organic chemical vapor deposition at a low temperature in this study. It was found that chemically modifying the SBA pore surface by carbon deposition helps to synthesize better quality copper nanostructures in the pore channels of SBA-15. More importantly, using hydrogen as a reducing agent and carrier gas can produce significantly improved copper nanowires encapsulated in SBA-15. This enhancement is due to the chemical decomposition and reduction of organometallic precursor (copper(II) acetylacetonate) into smaller fragments that can more easily penetrate the interior of the SBA-15 porous structure. The dimensions of the encapsulated metal nanowire can be tailored by using different pore-sized substrates. This is the first time tuned copper nanowires encapsulated in the nanopore channels of well-defined porous structure have been synthesized under mild conditions. © 2007 American Chemical Society.en_HK
dc.languageengen_US
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/jpccck/en_HK
dc.relation.ispartofJournal of Physical Chemistry Cen_HK
dc.subjectCarbonen_US
dc.subjectCopperen_US
dc.subjectEncapsulationen_US
dc.subjectLow Temperature Effectsen_US
dc.subjectMetallorganic Chemical Vapor Depositionen_US
dc.subjectOrganometallicsen_US
dc.subjectReducing Agentsen_US
dc.subjectSynthesis (Chemical)en_US
dc.titleFabrication of copper nanowire encapsulated in the pore channels of SBA-15 by metal organic chemical vapor depositionen_HK
dc.typeArticleen_HK
dc.identifier.emailLam, FLY:kefrank@hku.hken_HK
dc.identifier.authorityLam, FLY=rp01470en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1021/jp073786xen_HK
dc.identifier.scopuseid_2-s2.0-34548574936en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34548574936&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume111en_HK
dc.identifier.issue34en_HK
dc.identifier.spage12536en_HK
dc.identifier.epage12541en_HK
dc.identifier.eissn1932-7455-
dc.identifier.isiWOS:000248929100009-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZhang, Y=13806862100en_HK
dc.identifier.scopusauthoridLam, FLY=7102075931en_HK
dc.identifier.scopusauthoridHu, X=7404709975en_HK
dc.identifier.scopusauthoridYan, Z=7402519855en_HK
dc.identifier.scopusauthoridSheng, P=7102390217en_HK

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