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Conference Paper: Ultra-high material-quality silicon pillars on glass

TitleUltra-high material-quality silicon pillars on glass
Authors
KeywordsAmorphous si
Annealing process
Capping layer
Crystalline silicons
Foreign substrates
Issue Date2010
PublisherIEEE.
Citation
The 35th IEEE Photovoltaic Specialists Conference (PVSC 2010), Honolulu, HI., 20-25 June 2010. In Proceedings of 35th PVSC, 2010, p. 002176-002179 How to Cite?
AbstractWe investigated a unique crystalline silicon structure-silicon pillars-formed by melt crystallization using millisecond-long single-pulse pulses of 110-GHz radiation of amorphous Si thin films deposited on glass by hot-wire chemical vapor deposition. With many microscopy techniques, we found that these pillars usually contain 1-4 randomly oriented grains with growth direction and grain boundaries perpendicular to the substrate surface. The grains in the Si pillars have ultra-high crystalline quality with grain sizes up to 20 m. We attribute the formation mechanism of the Si pillars to the extremely high heating/cooling rates of Si on a glass substrate using millimeter-wave radiation and the important roles played by wetting and capping layers during the annealing process. Such understandings may enable us to prepare ultra-high-quality, large-grained poly-Si on inexpensive foreign substrates at large scale and low cost. © 2010 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/129777
ISSN

 

DC FieldValueLanguage
dc.contributor.authorLiu, Fen_US
dc.contributor.authorAI-Jassim, MM-
dc.contributor.authorYoung, DL-
dc.date.accessioned2010-12-23T08:42:07Z-
dc.date.available2010-12-23T08:42:07Z-
dc.date.issued2010en_US
dc.identifier.citationThe 35th IEEE Photovoltaic Specialists Conference (PVSC 2010), Honolulu, HI., 20-25 June 2010. In Proceedings of 35th PVSC, 2010, p. 002176-002179en_US
dc.identifier.issn0160-8371-
dc.identifier.urihttp://hdl.handle.net/10722/129777-
dc.description.abstractWe investigated a unique crystalline silicon structure-silicon pillars-formed by melt crystallization using millisecond-long single-pulse pulses of 110-GHz radiation of amorphous Si thin films deposited on glass by hot-wire chemical vapor deposition. With many microscopy techniques, we found that these pillars usually contain 1-4 randomly oriented grains with growth direction and grain boundaries perpendicular to the substrate surface. The grains in the Si pillars have ultra-high crystalline quality with grain sizes up to 20 m. We attribute the formation mechanism of the Si pillars to the extremely high heating/cooling rates of Si on a glass substrate using millimeter-wave radiation and the important roles played by wetting and capping layers during the annealing process. Such understandings may enable us to prepare ultra-high-quality, large-grained poly-Si on inexpensive foreign substrates at large scale and low cost. © 2010 IEEE.-
dc.languageengen_US
dc.publisherIEEE.-
dc.relation.ispartofProceedings of the IEEE Photovoltaic Specialists Conference, PVSC 2010-
dc.rightsIEEE Photovoltaic Specialists Conference Conference Record. Copyright © IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectAmorphous si-
dc.subjectAnnealing process-
dc.subjectCapping layer-
dc.subjectCrystalline silicons-
dc.subjectForeign substrates-
dc.titleUltra-high material-quality silicon pillars on glassen_US
dc.typeConference_Paperen_US
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0160-8371&volume=&spage=002176 &epage= 002179&date=2010&atitle=Ultra-high+material-quality+silicon+pillars+on+glass-
dc.identifier.emailLiu, F: fordliu@hku.hken_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/PVSC.2010.5615865-
dc.identifier.scopuseid_2-s2.0-78650096685-
dc.identifier.hkuros177422en_US
dc.identifier.spage002176-
dc.identifier.epage002179-
dc.description.otherThe 35th IEEE Photovoltaic Specialists Conference (PVSC 2010), Honolulu, HI., 20-25 June 2010. In Proceedings of 35th PVSC, 2010, p. 002176-002179-

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