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Conference Paper: Nonlinear silicon photonics

TitleNonlinear silicon photonics
Authors
Keywordsnonlinear optics
silicon photonics
Issue Date2010
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
The 2010 Conference of the International Society for Optical Engineering (SPIE) Photonics Europe, Brussels, Belgium, 12-16 April 2010. In Proceedings of SPIE, 2010, v. 7719, article no. 771904 How to Cite?
AbstractAn intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications. © 2010 Copyright SPIE - The International Society for Optical Engineering.
DescriptionSession - Silicon Photonics and Photonic Integrated Circuits II
Persistent Identifierhttp://hdl.handle.net/10722/129706
ISBN
ISSN
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorTsia, KKen_HK
dc.contributor.authorJalali, Ben_HK
dc.date.accessioned2010-12-23T08:41:10Z-
dc.date.available2010-12-23T08:41:10Z-
dc.date.issued2010en_HK
dc.identifier.citationThe 2010 Conference of the International Society for Optical Engineering (SPIE) Photonics Europe, Brussels, Belgium, 12-16 April 2010. In Proceedings of SPIE, 2010, v. 7719, article no. 771904en_HK
dc.identifier.isbn978-081948192-4-
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/129706-
dc.descriptionSession - Silicon Photonics and Photonic Integrated Circuits II-
dc.description.abstractAn intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications. © 2010 Copyright SPIE - The International Society for Optical Engineering.en_HK
dc.languageengen_US
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_HK
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_HK
dc.rightsProceedings of SPIE. Copyright © SPIE - International Society for Optical Engineering.-
dc.rightsCopyright notice format: Copyright 2010 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectnonlinear opticsen_HK
dc.subjectsilicon photonicsen_HK
dc.titleNonlinear silicon photonicsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailTsia, KK:tsia@hku.hken_HK
dc.identifier.authorityTsia, KK=rp01389en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1117/12.858153en_HK
dc.identifier.scopuseid_2-s2.0-77954746371en_HK
dc.identifier.hkuros176887en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77954746371&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume7719en_HK
dc.identifier.isiWOS:000285297700002-
dc.publisher.placeUnited Statesen_HK
dc.description.otherThe 2010 Conference of the International Society for Optical Engineering (SPIE) Photonics Europe, Brussels, Belgium, 12-16 April 2010. In Proceedings of SPIE, 2010, v. 7719, article no. 771904-
dc.identifier.scopusauthoridTsia, KK=6506659574en_HK
dc.identifier.scopusauthoridJalali, B=7004889917en_HK

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