Article: GaN-nanowire-based dye-sensitized solar cells
| Title | GaN-nanowire-based dye-sensitized solar cells | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| Authors | Chen, XY1 Yip, CT1 Fung, MK1 Djurišić, AB1 Chan, WK1 | ||||||||||
| Issue Date | 2010 | ||||||||||
| Publisher | Springer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm | ||||||||||
| Citation | Applied Physics A: Materials Science And Processing, 2010, v. 100 n. 1, p. 15-19 [How to Cite?] DOI: http://dx.doi.org/10.1007/s00339-010-5580-9 | ||||||||||
| Abstract | GaN nanowires typically exhibit high electron mobility and excellent chemical stability. However, stability of GaN is detrimental for successful attachment of dye molecules and its application in dye-sensitized solar cells (DSSCs). Here we demonstrate DSSCs based on GaN/gallium oxide and GaN/TiO x core-shell structures, and we show that coating of GaN nanowires with a TiO x shell significantly increases dye adsorption and consequently photovoltaic performance. The best cells exhibited short circuit current density of 1.83 mA/cm2 and power conversion efficiency of 0.44% under AM 1.5 simulated solar illumination. © 2010 Springer-Verlag. | ||||||||||
| ISSN | 0947-8396 2011 Impact Factor: 1.63 2011 SCImago Journal Rankings: 0.213 | ||||||||||
| DOI | http://dx.doi.org/10.1007/s00339-010-5580-9 | ||||||||||
| ISI Accession Number ID | WOS:000279127700003
Funding Information: Financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant, and Outstanding Young Researcher Award (administrated by The University of Hong Kong) is acknowledged. | ||||||||||
| References | References in Scopus |
| dc.contributor.author | Chen, XY | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| dc.contributor.author | Yip, CT | ||||||||||
| dc.contributor.author | Fung, MK | ||||||||||
| dc.contributor.author | Djurišić, AB | ||||||||||
| dc.contributor.author | Chan, WK | ||||||||||
| dc.date.accessioned | 2010-12-23T08:35:44Z | ||||||||||
| dc.date.available | 2010-12-23T08:35:44Z | ||||||||||
| dc.date.issued | 2010 | ||||||||||
| dc.description.abstract | GaN nanowires typically exhibit high electron mobility and excellent chemical stability. However, stability of GaN is detrimental for successful attachment of dye molecules and its application in dye-sensitized solar cells (DSSCs). Here we demonstrate DSSCs based on GaN/gallium oxide and GaN/TiO x core-shell structures, and we show that coating of GaN nanowires with a TiO x shell significantly increases dye adsorption and consequently photovoltaic performance. The best cells exhibited short circuit current density of 1.83 mA/cm2 and power conversion efficiency of 0.44% under AM 1.5 simulated solar illumination. © 2010 Springer-Verlag. | ||||||||||
| dc.description.nature | Link_to_subscribed_fulltext | ||||||||||
| dc.identifier.citation | Applied Physics A: Materials Science And Processing, 2010, v. 100 n. 1, p. 15-19 [How to Cite?] DOI: http://dx.doi.org/10.1007/s00339-010-5580-9 | ||||||||||
| dc.identifier.citeulike | 6788122 | ||||||||||
| dc.identifier.doi | http://dx.doi.org/10.1007/s00339-010-5580-9 | ||||||||||
| dc.identifier.epage | 19 | ||||||||||
| dc.identifier.hkuros | 176919 | ||||||||||
| dc.identifier.isi | WOS:000279127700003
Funding Information: Financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant, and Outstanding Young Researcher Award (administrated by The University of Hong Kong) is acknowledged. | ||||||||||
| dc.identifier.issn | 0947-8396 2011 Impact Factor: 1.63 2011 SCImago Journal Rankings: 0.213 | ||||||||||
| dc.identifier.issue | 1 | ||||||||||
| dc.identifier.scopus | eid_2-s2.0-77954089211 | ||||||||||
| dc.identifier.spage | 15 | ||||||||||
| dc.identifier.uri | http://hdl.handle.net/10722/129349 | ||||||||||
| dc.identifier.volume | 100 | ||||||||||
| dc.language | eng | ||||||||||
| dc.publisher | Springer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm | ||||||||||
| dc.publisher.place | Germany | ||||||||||
| dc.relation.ispartof | Applied Physics A: Materials Science and Processing | ||||||||||
| dc.relation.references | References in Scopus | ||||||||||
| dc.rights | The original publication is available at www.springerlink.com | ||||||||||
| dc.title | GaN-nanowire-based dye-sensitized solar cells | ||||||||||
| dc.type | Article |
Author Affiliations
- The University of Hong Kong