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Article: Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering

TitleShallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering
Authors
KeywordsAcceptor complex
Hydrogen impurity
Low substrate temperature
Secondary ion mass spectroscopy
Silicon compounds
Issue Date2010
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 2010, v. 25 n. 8 How to Cite?
Abstract
Arsenic-doped ZnMgO films were fabricated on SiO 2 by the radio frequency magnetron sputtering technique at different substrate temperatures during growth. The yielded films were characterized by room temperature Hall measurement, x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, secondary ion mass spectroscopy, nuclear reaction analysis and low-temperature photoluminescence. As-doped samples grown at low substrate temperature (350 °C) were n-type conducting (n∼10 18 cm -3), with evidence showing that the hydrogen impurity was an important shallow donor associated with the observed n-type conduction. Conversion of n-type to p-type conduction being observed at the substrate temperature of ∼400 °C was associated with the formation of the As Zn(V Zn) 2 shallow acceptor complex and the drastic reduction of the hydrogen content. © 2010 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/129346
ISSN
2013 Impact Factor: 2.206
ISI Accession Number ID
Funding AgencyGrant Number
Hong Kong Research Grant Council7031/08P
Deutscher Akakemischer Austausch DienstG HK026/07
Funding Information:

This work was financially supported by the Hong Kong Research Grant Council under the GRF projects no 7031/08P. The authors would also like to thank the Hong Kong Research Grant Council and the Deutscher Akakemischer Austausch Dienst for their support through the Germany/Hong Kong Joint Research Scheme (no G HK026/07).

References

 

DC FieldValueLanguage
dc.contributor.authorFan, JCen_HK
dc.contributor.authorW Ding, Gen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorXie, Zen_HK
dc.contributor.authorZhong, YCen_HK
dc.contributor.authorWong, KSen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorGrambole, Den_HK
dc.contributor.authorLing, CCen_HK
dc.date.accessioned2010-12-23T08:35:42Z-
dc.date.available2010-12-23T08:35:42Z-
dc.date.issued2010en_HK
dc.identifier.citationSemiconductor Science And Technology, 2010, v. 25 n. 8en_HK
dc.identifier.issn0268-1242en_HK
dc.identifier.urihttp://hdl.handle.net/10722/129346-
dc.description.abstractArsenic-doped ZnMgO films were fabricated on SiO 2 by the radio frequency magnetron sputtering technique at different substrate temperatures during growth. The yielded films were characterized by room temperature Hall measurement, x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, secondary ion mass spectroscopy, nuclear reaction analysis and low-temperature photoluminescence. As-doped samples grown at low substrate temperature (350 °C) were n-type conducting (n∼10 18 cm -3), with evidence showing that the hydrogen impurity was an important shallow donor associated with the observed n-type conduction. Conversion of n-type to p-type conduction being observed at the substrate temperature of ∼400 °C was associated with the formation of the As Zn(V Zn) 2 shallow acceptor complex and the drastic reduction of the hydrogen content. © 2010 IOP Publishing Ltd.en_HK
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_HK
dc.relation.ispartofSemiconductor Science and Technologyen_HK
dc.rightsSemiconductor Science and Technology. Copyright © Institute of Physics Publishing.-
dc.subjectAcceptor complex-
dc.subjectHydrogen impurity-
dc.subjectLow substrate temperature-
dc.subjectSecondary ion mass spectroscopy-
dc.subjectSilicon compounds-
dc.titleShallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputteringen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0268-1242&volume=25&issue=8, article no. 085009&spage=&epage=&date=2010&atitle=Shallow+acceptor+and+hydrogen+impurity+in+p-type+arsenic-doped+ZnMgO+films+grown+by+radio+frequency+magnetron+sputtering-
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0268-1242/25/8/085009en_HK
dc.identifier.scopuseid_2-s2.0-78149267924en_HK
dc.identifier.hkuros176930en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-78149267924&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume25en_HK
dc.identifier.issue8en_HK
dc.identifier.isiWOS:000280275800011-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridFan, JC=36019048800en_HK
dc.identifier.scopusauthoridW Ding, G=36638703800en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridXie, Z=15060759300en_HK
dc.identifier.scopusauthoridZhong, YC=8623189300en_HK
dc.identifier.scopusauthoridWong, KS=7404759949en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.scopusauthoridGrambole, D=7004711621en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK

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