Article: Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering
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- Publisher Website: 10.1088/0268-1242/25/8/085009
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| Title | Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering | ||||||
|---|---|---|---|---|---|---|---|
| Authors | Fan, JC2 W Ding, G2 Fung, S2 Xie, Z1 Zhong, YC3 Wong, KS3 Brauer, G4 Anwand, W4 Grambole, D4 Ling, CC2 | ||||||
| Keywords | Acceptor complex Hydrogen impurity Low substrate temperature Secondary ion mass spectroscopy Silicon compounds | ||||||
| Issue Date | 2010 | ||||||
| Publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst | ||||||
| Citation | Semiconductor Science And Technology, 2010, v. 25 n. 8 [How to Cite?] DOI: http://dx.doi.org/10.1088/0268-1242/25/8/085009 | ||||||
| Abstract | Arsenic-doped ZnMgO films were fabricated on SiO 2 by the radio frequency magnetron sputtering technique at different substrate temperatures during growth. The yielded films were characterized by room temperature Hall measurement, x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, secondary ion mass spectroscopy, nuclear reaction analysis and low-temperature photoluminescence. As-doped samples grown at low substrate temperature (350 °C) were n-type conducting (n∼10 18 cm -3), with evidence showing that the hydrogen impurity was an important shallow donor associated with the observed n-type conduction. Conversion of n-type to p-type conduction being observed at the substrate temperature of ∼400 °C was associated with the formation of the As Zn(V Zn) 2 shallow acceptor complex and the drastic reduction of the hydrogen content. © 2010 IOP Publishing Ltd. | ||||||
| ISSN | 0268-1242 2011 Impact Factor: 1.723 2011 SCImago Journal Rankings: 0.118 | ||||||
| DOI | http://dx.doi.org/10.1088/0268-1242/25/8/085009 | ||||||
| ISI Accession Number ID | WOS:000280275800011
Funding Information: This work was financially supported by the Hong Kong Research Grant Council under the GRF projects no 7031/08P. The authors would also like to thank the Hong Kong Research Grant Council and the Deutscher Akakemischer Austausch Dienst for their support through the Germany/Hong Kong Joint Research Scheme (no G HK026/07). | ||||||
| References | References in Scopus |
| dc.contributor.author | Fan, JC | ||||||
|---|---|---|---|---|---|---|---|
| dc.contributor.author | W Ding, G | ||||||
| dc.contributor.author | Fung, S | ||||||
| dc.contributor.author | Xie, Z | ||||||
| dc.contributor.author | Zhong, YC | ||||||
| dc.contributor.author | Wong, KS | ||||||
| dc.contributor.author | Brauer, G | ||||||
| dc.contributor.author | Anwand, W | ||||||
| dc.contributor.author | Grambole, D | ||||||
| dc.contributor.author | Ling, CC | ||||||
| dc.date.accessioned | 2010-12-23T08:35:42Z | ||||||
| dc.date.available | 2010-12-23T08:35:42Z | ||||||
| dc.date.issued | 2010 | ||||||
| dc.description.abstract | Arsenic-doped ZnMgO films were fabricated on SiO 2 by the radio frequency magnetron sputtering technique at different substrate temperatures during growth. The yielded films were characterized by room temperature Hall measurement, x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, secondary ion mass spectroscopy, nuclear reaction analysis and low-temperature photoluminescence. As-doped samples grown at low substrate temperature (350 °C) were n-type conducting (n∼10 18 cm -3), with evidence showing that the hydrogen impurity was an important shallow donor associated with the observed n-type conduction. Conversion of n-type to p-type conduction being observed at the substrate temperature of ∼400 °C was associated with the formation of the As Zn(V Zn) 2 shallow acceptor complex and the drastic reduction of the hydrogen content. © 2010 IOP Publishing Ltd. | ||||||
| dc.description.nature | Link_to_subscribed_fulltext | ||||||
| dc.identifier.citation | Semiconductor Science And Technology, 2010, v. 25 n. 8 [How to Cite?] DOI: http://dx.doi.org/10.1088/0268-1242/25/8/085009 | ||||||
| dc.identifier.doi | http://dx.doi.org/10.1088/0268-1242/25/8/085009 | ||||||
| dc.identifier.hkuros | 176930 | ||||||
| dc.identifier.isi | WOS:000280275800011
Funding Information: This work was financially supported by the Hong Kong Research Grant Council under the GRF projects no 7031/08P. The authors would also like to thank the Hong Kong Research Grant Council and the Deutscher Akakemischer Austausch Dienst for their support through the Germany/Hong Kong Joint Research Scheme (no G HK026/07). | ||||||
| dc.identifier.issn | 0268-1242 2011 Impact Factor: 1.723 2011 SCImago Journal Rankings: 0.118 | ||||||
| dc.identifier.issue | 8 | ||||||
| dc.identifier.openurl | | ||||||
| dc.identifier.scopus | eid_2-s2.0-78149267924 | ||||||
| dc.identifier.uri | http://hdl.handle.net/10722/129346 | ||||||
| dc.identifier.volume | 25 | ||||||
| dc.language | eng | ||||||
| dc.publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst | ||||||
| dc.publisher.place | United Kingdom | ||||||
| dc.relation.ispartof | Semiconductor Science and Technology | ||||||
| dc.relation.references | References in Scopus | ||||||
| dc.rights | Semiconductor Science and Technology. Copyright © Institute of Physics Publishing. | ||||||
| dc.subject | Acceptor complex | ||||||
| dc.subject | Hydrogen impurity | ||||||
| dc.subject | Low substrate temperature | ||||||
| dc.subject | Secondary ion mass spectroscopy | ||||||
| dc.subject | Silicon compounds | ||||||
| dc.title | Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering | ||||||
| dc.type | Article |
Author Affiliations
- Hunan University
- The University of Hong Kong
- Hong Kong University of Science and Technology
- Forschungszentrum Dresden Rossendorf