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Article: Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering
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TitleShallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering
 
AuthorsFan, JC1
W Ding, G1
Fung, S1
Xie, Z2
Zhong, YC3
Wong, KS3
Brauer, G4
Anwand, W4
Grambole, D4
Ling, CC1
 
KeywordsAcceptor complex
Hydrogen impurity
Low substrate temperature
Secondary ion mass spectroscopy
Silicon compounds
 
Issue Date2010
 
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
 
CitationSemiconductor Science And Technology, 2010, v. 25 n. 8 [How to Cite?]
DOI: http://dx.doi.org/10.1088/0268-1242/25/8/085009
 
AbstractArsenic-doped ZnMgO films were fabricated on SiO 2 by the radio frequency magnetron sputtering technique at different substrate temperatures during growth. The yielded films were characterized by room temperature Hall measurement, x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, secondary ion mass spectroscopy, nuclear reaction analysis and low-temperature photoluminescence. As-doped samples grown at low substrate temperature (350 °C) were n-type conducting (n∼10 18 cm -3), with evidence showing that the hydrogen impurity was an important shallow donor associated with the observed n-type conduction. Conversion of n-type to p-type conduction being observed at the substrate temperature of ∼400 °C was associated with the formation of the As Zn(V Zn) 2 shallow acceptor complex and the drastic reduction of the hydrogen content. © 2010 IOP Publishing Ltd.
 
ISSN0268-1242
2013 Impact Factor: 2.206
 
DOIhttp://dx.doi.org/10.1088/0268-1242/25/8/085009
 
ISI Accession Number IDWOS:000280275800011
Funding AgencyGrant Number
Hong Kong Research Grant Council7031/08P
Deutscher Akakemischer Austausch DienstG HK026/07
Funding Information:

This work was financially supported by the Hong Kong Research Grant Council under the GRF projects no 7031/08P. The authors would also like to thank the Hong Kong Research Grant Council and the Deutscher Akakemischer Austausch Dienst for their support through the Germany/Hong Kong Joint Research Scheme (no G HK026/07).

 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorFan, JC
 
dc.contributor.authorW Ding, G
 
dc.contributor.authorFung, S
 
dc.contributor.authorXie, Z
 
dc.contributor.authorZhong, YC
 
dc.contributor.authorWong, KS
 
dc.contributor.authorBrauer, G
 
dc.contributor.authorAnwand, W
 
dc.contributor.authorGrambole, D
 
dc.contributor.authorLing, CC
 
dc.date.accessioned2010-12-23T08:35:42Z
 
dc.date.available2010-12-23T08:35:42Z
 
dc.date.issued2010
 
dc.description.abstractArsenic-doped ZnMgO films were fabricated on SiO 2 by the radio frequency magnetron sputtering technique at different substrate temperatures during growth. The yielded films were characterized by room temperature Hall measurement, x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, secondary ion mass spectroscopy, nuclear reaction analysis and low-temperature photoluminescence. As-doped samples grown at low substrate temperature (350 °C) were n-type conducting (n∼10 18 cm -3), with evidence showing that the hydrogen impurity was an important shallow donor associated with the observed n-type conduction. Conversion of n-type to p-type conduction being observed at the substrate temperature of ∼400 °C was associated with the formation of the As Zn(V Zn) 2 shallow acceptor complex and the drastic reduction of the hydrogen content. © 2010 IOP Publishing Ltd.
 
dc.description.naturelink_to_subscribed_fulltext
 
dc.identifier.citationSemiconductor Science And Technology, 2010, v. 25 n. 8 [How to Cite?]
DOI: http://dx.doi.org/10.1088/0268-1242/25/8/085009
 
dc.identifier.doihttp://dx.doi.org/10.1088/0268-1242/25/8/085009
 
dc.identifier.hkuros176930
 
dc.identifier.isiWOS:000280275800011
Funding AgencyGrant Number
Hong Kong Research Grant Council7031/08P
Deutscher Akakemischer Austausch DienstG HK026/07
Funding Information:

This work was financially supported by the Hong Kong Research Grant Council under the GRF projects no 7031/08P. The authors would also like to thank the Hong Kong Research Grant Council and the Deutscher Akakemischer Austausch Dienst for their support through the Germany/Hong Kong Joint Research Scheme (no G HK026/07).

 
dc.identifier.issn0268-1242
2013 Impact Factor: 2.206
 
dc.identifier.issue8
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-78149267924
 
dc.identifier.urihttp://hdl.handle.net/10722/129346
 
dc.identifier.volume25
 
dc.languageeng
 
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
 
dc.publisher.placeUnited Kingdom
 
dc.relation.ispartofSemiconductor Science and Technology
 
dc.relation.referencesReferences in Scopus
 
dc.rightsSemiconductor Science and Technology. Copyright © Institute of Physics Publishing.
 
dc.subjectAcceptor complex
 
dc.subjectHydrogen impurity
 
dc.subjectLow substrate temperature
 
dc.subjectSecondary ion mass spectroscopy
 
dc.subjectSilicon compounds
 
dc.titleShallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering
 
dc.typeArticle
 
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<contributor.author>Xie, Z</contributor.author>
<contributor.author>Zhong, YC</contributor.author>
<contributor.author>Wong, KS</contributor.author>
<contributor.author>Brauer, G</contributor.author>
<contributor.author>Anwand, W</contributor.author>
<contributor.author>Grambole, D</contributor.author>
<contributor.author>Ling, CC</contributor.author>
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<description.abstract>Arsenic-doped ZnMgO films were fabricated on SiO 2 by the radio frequency magnetron sputtering technique at different substrate temperatures during growth. The yielded films were characterized by room temperature Hall measurement, x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, secondary ion mass spectroscopy, nuclear reaction analysis and low-temperature photoluminescence. As-doped samples grown at low substrate temperature (350 &#176;C) were n-type conducting (n&#8764;10 18 cm -3), with evidence showing that the hydrogen impurity was an important shallow donor associated with the observed n-type conduction. Conversion of n-type to p-type conduction being observed at the substrate temperature of &#8764;400 &#176;C was associated with the formation of the As Zn(V Zn) 2 shallow acceptor complex and the drastic reduction of the hydrogen content. &#169; 2010 IOP Publishing Ltd.</description.abstract>
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Author Affiliations
  1. The University of Hong Kong
  2. Hunan University
  3. Hong Kong University of Science and Technology
  4. Forschungszentrum Dresden Rossendorf