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Article: The van der Waals epitaxy of Bi 2Se 3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator
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TitleThe van der Waals epitaxy of Bi 2Se 3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator
 
AuthorsLi, HD1 2
Wang, ZY1
Kan, X1
Guo, X1
He, HT3
Wang, Z3
Wang, JN3
Wong, TL3
Wang, N3
Xie, MH1
 
KeywordsAs-grown
Epifilms
Growth front
Growth of thin films
Growth parameters
 
Issue Date2010
 
PublisherInstitute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/NJP
 
CitationNew Journal Of Physics, 2010, v. 12 [How to Cite?]
DOI: http://dx.doi.org/10.1088/1367-2630/12/10/103038
 
AbstractThe epitaxial growth of thin films of the topological insulator Bi 2Se 3 on nominally flat and vicinal Si(111) substrates was studied. In order to achieve a planar growth front and better quality epifilms, a two-step growth method was adopted for the van der Waals epitaxy of Bi 2Se 3 to proceed. By using vicinal Si(111) substrate surfaces, the in-plane growth rate anisotropy of Bi 2Se 3 was exploited in order to achieve single crystalline Bi 2Se 3 epifilms, in which threading defects and twins are effectively suppressed. The optimization of the growth parameters has resulted in the vicinal Bi 2Se 3 films showing a carrier mobility of ∼2000 cm 2 V -1 s -1 and a background doping of ∼ 3×10 18 cm -3 of the as-grown layers. Such samples not only show a relatively high magnetoresistance but also show a linear dependence on the magnetic field. © IOP Publishing Ltd. and Deutsche Physikalische Gesellschaft.
 
ISSN1367-2630
2012 Impact Factor: 4.063
2012 SCImago Journal Rankings: 2.413
 
DOIhttp://dx.doi.org/10.1088/1367-2630/12/10/103038
 
ISI Accession Number IDWOS:000284769700001
Funding AgencyGrant Number
University Grants Committee of Hong Kong Special Administrative Region (HKSAR)SEG CUHK06
Research Grant Council of HKSAR, ChinaHKU 10/CRF/08
HKU
Funding Information:

We are grateful to W K Ho for technical support in the growth experiments and to Stephen S Y Chui for assistance with XRD experiments. The PPMS facilities used for the magneto-transport measurements are supported by a Special Equipment Grant (SEG CUHK06) from the University Grants Committee of Hong Kong Special Administrative Region (HKSAR). This work was financially supported by a Collaborative Research Fund from the Research Grant Council of HKSAR, China, under grant no. HKU 10/CRF/08, and by a Seed Fund for Basic Research from HKU.

 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorLi, HD
 
dc.contributor.authorWang, ZY
 
dc.contributor.authorKan, X
 
dc.contributor.authorGuo, X
 
dc.contributor.authorHe, HT
 
dc.contributor.authorWang, Z
 
dc.contributor.authorWang, JN
 
dc.contributor.authorWong, TL
 
dc.contributor.authorWang, N
 
dc.contributor.authorXie, MH
 
dc.date.accessioned2010-12-23T08:35:39Z
 
dc.date.available2010-12-23T08:35:39Z
 
dc.date.issued2010
 
dc.description.abstractThe epitaxial growth of thin films of the topological insulator Bi 2Se 3 on nominally flat and vicinal Si(111) substrates was studied. In order to achieve a planar growth front and better quality epifilms, a two-step growth method was adopted for the van der Waals epitaxy of Bi 2Se 3 to proceed. By using vicinal Si(111) substrate surfaces, the in-plane growth rate anisotropy of Bi 2Se 3 was exploited in order to achieve single crystalline Bi 2Se 3 epifilms, in which threading defects and twins are effectively suppressed. The optimization of the growth parameters has resulted in the vicinal Bi 2Se 3 films showing a carrier mobility of ∼2000 cm 2 V -1 s -1 and a background doping of ∼ 3×10 18 cm -3 of the as-grown layers. Such samples not only show a relatively high magnetoresistance but also show a linear dependence on the magnetic field. © IOP Publishing Ltd. and Deutsche Physikalische Gesellschaft.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationNew Journal Of Physics, 2010, v. 12 [How to Cite?]
DOI: http://dx.doi.org/10.1088/1367-2630/12/10/103038
 
dc.identifier.doihttp://dx.doi.org/10.1088/1367-2630/12/10/103038
 
dc.identifier.eissn1367-2630
 
dc.identifier.hkuros183248
 
dc.identifier.isiWOS:000284769700001
Funding AgencyGrant Number
University Grants Committee of Hong Kong Special Administrative Region (HKSAR)SEG CUHK06
Research Grant Council of HKSAR, ChinaHKU 10/CRF/08
HKU
Funding Information:

We are grateful to W K Ho for technical support in the growth experiments and to Stephen S Y Chui for assistance with XRD experiments. The PPMS facilities used for the magneto-transport measurements are supported by a Special Equipment Grant (SEG CUHK06) from the University Grants Committee of Hong Kong Special Administrative Region (HKSAR). This work was financially supported by a Collaborative Research Fund from the Research Grant Council of HKSAR, China, under grant no. HKU 10/CRF/08, and by a Seed Fund for Basic Research from HKU.

 
dc.identifier.issn1367-2630
2012 Impact Factor: 4.063
2012 SCImago Journal Rankings: 2.413
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-78149435081
 
dc.identifier.urihttp://hdl.handle.net/10722/129341
 
dc.identifier.volume12
 
dc.languageeng
 
dc.publisherInstitute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/NJP
 
dc.publisher.placeUnited Kingdom
 
dc.relation.ispartofNew Journal of Physics
 
dc.relation.referencesReferences in Scopus
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.rightsNew Journal of Physics. Copyright © Institute of Physics Publishing Ltd.
 
dc.subjectAs-grown
 
dc.subjectEpifilms
 
dc.subjectGrowth front
 
dc.subjectGrowth of thin films
 
dc.subjectGrowth parameters
 
dc.titleThe van der Waals epitaxy of Bi 2Se 3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator
 
dc.typeArticle
 
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<contributor.author>Wang, Z</contributor.author>
<contributor.author>Wang, JN</contributor.author>
<contributor.author>Wong, TL</contributor.author>
<contributor.author>Wang, N</contributor.author>
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<description.abstract>The epitaxial growth of thin films of the topological insulator Bi 2Se 3 on nominally flat and vicinal Si(111) substrates was studied. In order to achieve a planar growth front and better quality epifilms, a two-step growth method was adopted for the van der Waals epitaxy of Bi 2Se 3 to proceed. By using vicinal Si(111) substrate surfaces, the in-plane growth rate anisotropy of Bi 2Se 3 was exploited in order to achieve single crystalline Bi 2Se 3 epifilms, in which threading defects and twins are effectively suppressed. The optimization of the growth parameters has resulted in the vicinal Bi 2Se 3 films showing a carrier mobility of &#8764;2000 cm 2 V -1 s -1 and a background doping of &#8764; 3&#215;10 18 cm -3 of the as-grown layers. Such samples not only show a relatively high magnetoresistance but also show a linear dependence on the magnetic field. &#169; IOP Publishing Ltd. and Deutsche Physikalische Gesellschaft.</description.abstract>
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Author Affiliations
  1. The University of Hong Kong
  2. Beijing Jiaotong Daxue
  3. Hong Kong University of Science and Technology