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Article: The van der Waals epitaxy of Bi 2Se 3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator

TitleThe van der Waals epitaxy of Bi 2Se 3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator
Authors
KeywordsAs-grown
Epifilms
Growth front
Growth of thin films
Growth parameters
Issue Date2010
PublisherInstitute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/NJP
Citation
New Journal Of Physics, 2010, v. 12 How to Cite?
AbstractThe epitaxial growth of thin films of the topological insulator Bi 2Se 3 on nominally flat and vicinal Si(111) substrates was studied. In order to achieve a planar growth front and better quality epifilms, a two-step growth method was adopted for the van der Waals epitaxy of Bi 2Se 3 to proceed. By using vicinal Si(111) substrate surfaces, the in-plane growth rate anisotropy of Bi 2Se 3 was exploited in order to achieve single crystalline Bi 2Se 3 epifilms, in which threading defects and twins are effectively suppressed. The optimization of the growth parameters has resulted in the vicinal Bi 2Se 3 films showing a carrier mobility of ∼2000 cm 2 V -1 s -1 and a background doping of ∼ 3×10 18 cm -3 of the as-grown layers. Such samples not only show a relatively high magnetoresistance but also show a linear dependence on the magnetic field. © IOP Publishing Ltd. and Deutsche Physikalische Gesellschaft.
Persistent Identifierhttp://hdl.handle.net/10722/129341
ISSN
2014 Impact Factor: 3.558
2014 SCImago Journal Rankings: 2.217
ISI Accession Number ID
Funding AgencyGrant Number
University Grants Committee of Hong Kong Special Administrative Region (HKSAR)SEG CUHK06
Research Grant Council of HKSAR, ChinaHKU 10/CRF/08
HKU
Funding Information:

We are grateful to W K Ho for technical support in the growth experiments and to Stephen S Y Chui for assistance with XRD experiments. The PPMS facilities used for the magneto-transport measurements are supported by a Special Equipment Grant (SEG CUHK06) from the University Grants Committee of Hong Kong Special Administrative Region (HKSAR). This work was financially supported by a Collaborative Research Fund from the Research Grant Council of HKSAR, China, under grant no. HKU 10/CRF/08, and by a Seed Fund for Basic Research from HKU.

References

 

DC FieldValueLanguage
dc.contributor.authorLi, HDen_HK
dc.contributor.authorWang, ZYen_HK
dc.contributor.authorKan, Xen_HK
dc.contributor.authorGuo, Xen_HK
dc.contributor.authorHe, HTen_HK
dc.contributor.authorWang, Zen_HK
dc.contributor.authorWang, JNen_HK
dc.contributor.authorWong, TLen_HK
dc.contributor.authorWang, Nen_HK
dc.contributor.authorXie, MHen_HK
dc.date.accessioned2010-12-23T08:35:39Z-
dc.date.available2010-12-23T08:35:39Z-
dc.date.issued2010en_HK
dc.identifier.citationNew Journal Of Physics, 2010, v. 12en_HK
dc.identifier.issn1367-2630en_HK
dc.identifier.urihttp://hdl.handle.net/10722/129341-
dc.description.abstractThe epitaxial growth of thin films of the topological insulator Bi 2Se 3 on nominally flat and vicinal Si(111) substrates was studied. In order to achieve a planar growth front and better quality epifilms, a two-step growth method was adopted for the van der Waals epitaxy of Bi 2Se 3 to proceed. By using vicinal Si(111) substrate surfaces, the in-plane growth rate anisotropy of Bi 2Se 3 was exploited in order to achieve single crystalline Bi 2Se 3 epifilms, in which threading defects and twins are effectively suppressed. The optimization of the growth parameters has resulted in the vicinal Bi 2Se 3 films showing a carrier mobility of ∼2000 cm 2 V -1 s -1 and a background doping of ∼ 3×10 18 cm -3 of the as-grown layers. Such samples not only show a relatively high magnetoresistance but also show a linear dependence on the magnetic field. © IOP Publishing Ltd. and Deutsche Physikalische Gesellschaft.en_HK
dc.languageengen_US
dc.publisherInstitute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/NJPen_HK
dc.relation.ispartofNew Journal of Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsNew Journal of Physics. Copyright © Institute of Physics Publishing Ltd.-
dc.subjectAs-grown-
dc.subjectEpifilms-
dc.subjectGrowth front-
dc.subjectGrowth of thin films-
dc.subjectGrowth parameters-
dc.titleThe van der Waals epitaxy of Bi 2Se 3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulatoren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1367-2630&volume=12, article no. 103038&spage=&epage=&date=2010&atitle=The+van+der+Waals+epitaxy+of+Bi2Se3+on+the+vicinal+Si(111)+surface:+an+approach+for+preparing+high-quality+thin+films+of+a+topological+insulator-
dc.identifier.emailLi, HD: hdli1978@hkucc.hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityLi, HD=rp00739en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1088/1367-2630/12/10/103038en_HK
dc.identifier.scopuseid_2-s2.0-78149435081en_HK
dc.identifier.hkuros183248en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-78149435081&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume12en_HK
dc.identifier.eissn1367-2630-
dc.identifier.isiWOS:000284769700001-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLi, HD=36441549600en_HK
dc.identifier.scopusauthoridWang, ZY=23978772700en_HK
dc.identifier.scopusauthoridKan, X=6603805636en_HK
dc.identifier.scopusauthoridGuo, X=34770102100en_HK
dc.identifier.scopusauthoridHe, HT=9633178800en_HK
dc.identifier.scopusauthoridWang, Z=23983754300en_HK
dc.identifier.scopusauthoridWang, JN=35249505300en_HK
dc.identifier.scopusauthoridWong, TL=26321269800en_HK
dc.identifier.scopusauthoridWang, N=7404340430en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK

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