Article: The van der Waals epitaxy of Bi 2Se 3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator
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- Publisher Website: 10.1088/1367-2630/12/10/103038
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| Title | The van der Waals epitaxy of Bi 2Se 3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator | ||||||||
|---|---|---|---|---|---|---|---|---|---|
| Authors | Li, HD1 2 Wang, ZY1 Kan, X1 Guo, X1 He, HT3 Wang, Z3 Wang, JN3 Wong, TL3 Wang, N3 Xie, MH1 | ||||||||
| Keywords | As-grown Epifilms Growth front Growth of thin films Growth parameters | ||||||||
| Issue Date | 2010 | ||||||||
| Publisher | Institute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/NJP | ||||||||
| Citation | New Journal Of Physics, 2010, v. 12 [How to Cite?] DOI: http://dx.doi.org/10.1088/1367-2630/12/10/103038 | ||||||||
| Abstract | The epitaxial growth of thin films of the topological insulator Bi 2Se 3 on nominally flat and vicinal Si(111) substrates was studied. In order to achieve a planar growth front and better quality epifilms, a two-step growth method was adopted for the van der Waals epitaxy of Bi 2Se 3 to proceed. By using vicinal Si(111) substrate surfaces, the in-plane growth rate anisotropy of Bi 2Se 3 was exploited in order to achieve single crystalline Bi 2Se 3 epifilms, in which threading defects and twins are effectively suppressed. The optimization of the growth parameters has resulted in the vicinal Bi 2Se 3 films showing a carrier mobility of ∼2000 cm 2 V -1 s -1 and a background doping of ∼ 3×10 18 cm -3 of the as-grown layers. Such samples not only show a relatively high magnetoresistance but also show a linear dependence on the magnetic field. © IOP Publishing Ltd. and Deutsche Physikalische Gesellschaft. | ||||||||
| ISSN | 1367-2630 2011 Impact Factor: 4.177 2011 SCImago Journal Rankings: 0.367 | ||||||||
| DOI | http://dx.doi.org/10.1088/1367-2630/12/10/103038 | ||||||||
| ISI Accession Number ID | WOS:000284769700001
Funding Information: We are grateful to W K Ho for technical support in the growth experiments and to Stephen S Y Chui for assistance with XRD experiments. The PPMS facilities used for the magneto-transport measurements are supported by a Special Equipment Grant (SEG CUHK06) from the University Grants Committee of Hong Kong Special Administrative Region (HKSAR). This work was financially supported by a Collaborative Research Fund from the Research Grant Council of HKSAR, China, under grant no. HKU 10/CRF/08, and by a Seed Fund for Basic Research from HKU. | ||||||||
| References | References in Scopus |
| dc.contributor.author | Li, HD | ||||||||
|---|---|---|---|---|---|---|---|---|---|
| dc.contributor.author | Wang, ZY | ||||||||
| dc.contributor.author | Kan, X | ||||||||
| dc.contributor.author | Guo, X | ||||||||
| dc.contributor.author | He, HT | ||||||||
| dc.contributor.author | Wang, Z | ||||||||
| dc.contributor.author | Wang, JN | ||||||||
| dc.contributor.author | Wong, TL | ||||||||
| dc.contributor.author | Wang, N | ||||||||
| dc.contributor.author | Xie, MH | ||||||||
| dc.date.accessioned | 2010-12-23T08:35:39Z | ||||||||
| dc.date.available | 2010-12-23T08:35:39Z | ||||||||
| dc.date.issued | 2010 | ||||||||
| dc.description.abstract | The epitaxial growth of thin films of the topological insulator Bi 2Se 3 on nominally flat and vicinal Si(111) substrates was studied. In order to achieve a planar growth front and better quality epifilms, a two-step growth method was adopted for the van der Waals epitaxy of Bi 2Se 3 to proceed. By using vicinal Si(111) substrate surfaces, the in-plane growth rate anisotropy of Bi 2Se 3 was exploited in order to achieve single crystalline Bi 2Se 3 epifilms, in which threading defects and twins are effectively suppressed. The optimization of the growth parameters has resulted in the vicinal Bi 2Se 3 films showing a carrier mobility of ∼2000 cm 2 V -1 s -1 and a background doping of ∼ 3×10 18 cm -3 of the as-grown layers. Such samples not only show a relatively high magnetoresistance but also show a linear dependence on the magnetic field. © IOP Publishing Ltd. and Deutsche Physikalische Gesellschaft. | ||||||||
| dc.description.nature | published_or_final_version | ||||||||
| dc.identifier.citation | New Journal Of Physics, 2010, v. 12 [How to Cite?] DOI: http://dx.doi.org/10.1088/1367-2630/12/10/103038 | ||||||||
| dc.identifier.doi | http://dx.doi.org/10.1088/1367-2630/12/10/103038 | ||||||||
| dc.identifier.hkuros | 183248 | ||||||||
| dc.identifier.isi | WOS:000284769700001
Funding Information: We are grateful to W K Ho for technical support in the growth experiments and to Stephen S Y Chui for assistance with XRD experiments. The PPMS facilities used for the magneto-transport measurements are supported by a Special Equipment Grant (SEG CUHK06) from the University Grants Committee of Hong Kong Special Administrative Region (HKSAR). This work was financially supported by a Collaborative Research Fund from the Research Grant Council of HKSAR, China, under grant no. HKU 10/CRF/08, and by a Seed Fund for Basic Research from HKU. | ||||||||
| dc.identifier.issn | 1367-2630 2011 Impact Factor: 4.177 2011 SCImago Journal Rankings: 0.367 | ||||||||
| dc.identifier.openurl | | ||||||||
| dc.identifier.scopus | eid_2-s2.0-78149435081 | ||||||||
| dc.identifier.uri | http://hdl.handle.net/10722/129341 | ||||||||
| dc.identifier.volume | 12 | ||||||||
| dc.language | eng | ||||||||
| dc.publisher | Institute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/NJP | ||||||||
| dc.publisher.place | United Kingdom | ||||||||
| dc.relation.ispartof | New Journal of Physics | ||||||||
| dc.relation.references | References in Scopus | ||||||||
| dc.rights | Creative Commons: Attribution 3.0 Hong Kong License | ||||||||
| dc.rights | New Journal of Physics. Copyright © Institute of Physics Publishing Ltd. | ||||||||
| dc.subject | As-grown | ||||||||
| dc.subject | Epifilms | ||||||||
| dc.subject | Growth front | ||||||||
| dc.subject | Growth of thin films | ||||||||
| dc.subject | Growth parameters | ||||||||
| dc.title | The van der Waals epitaxy of Bi 2Se 3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator | ||||||||
| dc.type | Article |
Author Affiliations
- The University of Hong Kong
- Beijing Jiaotong Daxue
- Hong Kong University of Science and Technology