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Article: Molecular-beam epitaxy of AlInN: An effect of source flux and temperature on indium atom incorporation in alloys

TitleMolecular-beam epitaxy of AlInN: An effect of source flux and temperature on indium atom incorporation in alloys
Authors
Wang, ZYShi, BMCai, YWang, NXie, MH
KeywordsAluminium compounds
Dislocation structure
III-V semiconductors
Indium compounds
Lattice constants
Issue Date2010
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2010, v. 108 n. 3, article no. 033503 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3456009
AbstractGrowth of AlInN alloys by molecular-beam epitaxy is studied by reflection high-energy electron diffraction, where in-plane lattice constant and specular beam intensity oscillations are recorded for information of lattice misfit and growth rate as a function of source flux and temperature. An unexpected dependence of alloy growth rate on indium flux is observed, which reflects the specific incorporation kinetics of indium in the alloy. © 2010 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/129340
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:000280941000022
Funding AgencyGrant Number
Research Grant Council of the Hong Kong Special Administrative Region, ChinaHKU 7055/06P
7048/08P
Funding Information:

We acknowledge the technical support from Mr. W. K. Ho. This work was financially supported by grants from the Research Grant Council of the Hong Kong Special Administrative Region, China, under the Grant Nos. HKU 7055/06P and 7048/08P.

References
References in Scopus
Grants
Growth and properties of AlInN thin films

 

DC FieldValueLanguage
dc.contributor.authorWang, ZYen_HK
dc.contributor.authorShi, BMen_HK
dc.contributor.authorCai, Yen_HK
dc.contributor.authorWang, Nen_HK
dc.contributor.authorXie, MHen_HK
dc.date.accessioned2010-12-23T08:35:38Z-
dc.date.available2010-12-23T08:35:38Z-
dc.date.issued2010en_HK
dc.identifier.citationJournal of Applied Physics, 2010, v. 108 n. 3, article no. 033503-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/129340-
dc.description.abstractGrowth of AlInN alloys by molecular-beam epitaxy is studied by reflection high-energy electron diffraction, where in-plane lattice constant and specular beam intensity oscillations are recorded for information of lattice misfit and growth rate as a function of source flux and temperature. An unexpected dependence of alloy growth rate on indium flux is observed, which reflects the specific incorporation kinetics of indium in the alloy. © 2010 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2010, v. 108 n. 3, article no. 033503 and may be found at https://doi.org/10.1063/1.3456009-
dc.subjectAluminium compounds-
dc.subjectDislocation structure-
dc.subjectIII-V semiconductors-
dc.subjectIndium compounds-
dc.subjectLattice constants-
dc.titleMolecular-beam epitaxy of AlInN: An effect of source flux and temperature on indium atom incorporation in alloysen_HK
dc.typeArticleen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3456009en_HK
dc.identifier.scopuseid_2-s2.0-77955887050en_HK
dc.identifier.hkuros176928en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77955887050&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume108en_HK
dc.identifier.issue3en_HK
dc.identifier.spagearticle no. 033503-
dc.identifier.epagearticle no. 033503-
dc.identifier.isiWOS:000280941000022-
dc.publisher.placeUnited Statesen_HK
dc.relation.projectGrowth and properties of AlInN thin films-
dc.identifier.scopusauthoridWang, ZY=8438226800en_HK
dc.identifier.scopusauthoridShi, BM=15019647700en_HK
dc.identifier.scopusauthoridCai, Y=24823779900en_HK
dc.identifier.scopusauthoridWang, N=7404340430en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.issnl0021-8979-

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