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Conference Paper: Aberration-aware robust mask design with level-set-based inverse lithography

TitleAberration-aware robust mask design with level-set-based inverse lithography
Authors
KeywordsInverse lithography
Level-set
Wave aberration
Zernike polynomials
Issue Date2010
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
The Photomask and Next-Generation Lithography Mask Technology XVII, Yokohama, Japan, 13-14 April 2010. in Proceedings of SPIE, 2010, v. 7748, article no. 77481U, p. 1-8 How to Cite?
AbstractOptical proximity correction (OPC) is one of the most widely used Resolution Enhancement Techniques (RET) in mask designs. Conventional OPC is often designed for a set of nominal imaging parameters without giving sufficient attention to the process variations caused by aspherical wavefront leaving the exit pupil of the lithography system. As a result, the mask designed may deliver poor performance with process variations. In this paper, we first describe how a general point spread function (PSF) with wave aberration can degrade the output pattern quality, and then show how the wave aberration function can be incorporated into an inverse imaging framework for robust input mask pattern design against aberrations. A level-set-based time-dependent model can then be applied to solve it with appropriate finite difference schemes. The optimal mask gives more robust performance against either one specific type of aberration or a combination of different types of aberrations. © 2010 SPIE.
Persistent Identifierhttp://hdl.handle.net/10722/126205
ISSN
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorShen, Yen_HK
dc.contributor.authorWong, Nen_HK
dc.contributor.authorLam, EYen_HK
dc.date.accessioned2010-10-31T12:15:29Z-
dc.date.available2010-10-31T12:15:29Z-
dc.date.issued2010en_HK
dc.identifier.citationThe Photomask and Next-Generation Lithography Mask Technology XVII, Yokohama, Japan, 13-14 April 2010. in Proceedings of SPIE, 2010, v. 7748, article no. 77481U, p. 1-8en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/126205-
dc.description.abstractOptical proximity correction (OPC) is one of the most widely used Resolution Enhancement Techniques (RET) in mask designs. Conventional OPC is often designed for a set of nominal imaging parameters without giving sufficient attention to the process variations caused by aspherical wavefront leaving the exit pupil of the lithography system. As a result, the mask designed may deliver poor performance with process variations. In this paper, we first describe how a general point spread function (PSF) with wave aberration can degrade the output pattern quality, and then show how the wave aberration function can be incorporated into an inverse imaging framework for robust input mask pattern design against aberrations. A level-set-based time-dependent model can then be applied to solve it with appropriate finite difference schemes. The optimal mask gives more robust performance against either one specific type of aberration or a combination of different types of aberrations. © 2010 SPIE.en_HK
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_HK
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsProceedings of SPIE - The International Society for Optical Engineering. Copyright © Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.-
dc.subjectInverse lithographyen_HK
dc.subjectLevel-seten_HK
dc.subjectWave aberrationen_HK
dc.subjectZernike polynomialsen_HK
dc.titleAberration-aware robust mask design with level-set-based inverse lithographyen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=7748, article no. 77481U&spage=1&epage=8&date=2010&atitle=Aberration-aware+robust+mask+design+with+level-set-based+inverse+lithography-
dc.identifier.emailWong, N:nwong@eee.hku.hken_HK
dc.identifier.emailLam, EY:elam@eee.hku.hken_HK
dc.identifier.authorityWong, N=rp00190en_HK
dc.identifier.authorityLam, EY=rp00131en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1117/12.863973en_HK
dc.identifier.scopuseid_2-s2.0-77954402648en_HK
dc.identifier.hkuros171696en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77954402648&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume7748en_HK
dc.identifier.spage1-
dc.identifier.epage8-
dc.identifier.isiWOS:000284822300061-
dc.publisher.placeUnited Statesen_HK
dc.description.otherThe Photomask and Next-Generation Lithography Mask Technology XVII, Yokohama, Japan, 13-14 April 2010. in Proceedings of SPIE, 2010, v. 7748, article no. 77481U, p. 1-8-
dc.identifier.scopusauthoridShen, Y=12804295400en_HK
dc.identifier.scopusauthoridWong, N=35235551600en_HK
dc.identifier.scopusauthoridLam, EY=7102890004en_HK

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