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Conference Paper: A study on InGaN/GaN multiple quantum-well hydrogen sensor with HfTiO as gate dielectric

TitleA study on InGaN/GaN multiple quantum-well hydrogen sensor with HfTiO as gate dielectric
Authors
KeywordsHigh temperature
Hydrogen sensor
Hydrogen-sensing property
Ingan/gan
Multiple quantum wells
Issue Date2009
PublisherIEEE.
Citation
The IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2009), Xi'an, China, 25-27 December 2009. In Proceedings of EDSSC, 2009, p. 127-130 How to Cite?
AbstractA hydrogen sensor based on InGaN/GaN multiple quantum wells (MQWs) was fabricated. A gate dielectric HfTiO was added to stabilize its performance at high temperature. Its hydrogen-sensing properties were studied at high temperatures from 100°C to 500°C. The sensor showed promising hydrogen-sensing properties over a wide temperature range, and could still function beyond 500°C. ©2009 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/126191
ISBN
References

 

DC FieldValueLanguage
dc.contributor.authorChen, Gen_HK
dc.contributor.authorChoi, AHWen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2010-10-31T12:14:44Z-
dc.date.available2010-10-31T12:14:44Z-
dc.date.issued2009en_HK
dc.identifier.citationThe IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2009), Xi'an, China, 25-27 December 2009. In Proceedings of EDSSC, 2009, p. 127-130en_HK
dc.identifier.isbn978-1-4244-4297-3-
dc.identifier.urihttp://hdl.handle.net/10722/126191-
dc.description.abstractA hydrogen sensor based on InGaN/GaN multiple quantum wells (MQWs) was fabricated. A gate dielectric HfTiO was added to stabilize its performance at high temperature. Its hydrogen-sensing properties were studied at high temperatures from 100°C to 500°C. The sensor showed promising hydrogen-sensing properties over a wide temperature range, and could still function beyond 500°C. ©2009 IEEE.en_HK
dc.languageengen_HK
dc.publisherIEEE.-
dc.relation.ispartofProceedings of the IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2009en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsIEEE Conference on Electron Devices and Solid-State Circuits. Copyright © IEEE.-
dc.rights©2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectHigh temperature-
dc.subjectHydrogen sensor-
dc.subjectHydrogen-sensing property-
dc.subjectIngan/gan-
dc.subjectMultiple quantum wells-
dc.titleA study on InGaN/GaN multiple quantum-well hydrogen sensor with HfTiO as gate dielectricen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=978-1-4244-4297-3&volume=&spage=127&epage=130&date=2009&atitle=A+study+on+InGaN/GaN+multiple+quantum-well+hydrogen+sensor+with+HfTiO+as+gate+dielectric-
dc.identifier.emailChoi, AHW:hwchoi@eee.hku.hken_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityChoi, AHW=rp00108en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/EDSSC.2009.5394172en_HK
dc.identifier.scopuseid_2-s2.0-77949630899en_HK
dc.identifier.hkuros179090en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77949630899&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage127en_HK
dc.identifier.epage130en_HK
dc.description.otherThe IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2009), Xi'an, China, 25-27 December 2009. In Proceedings of EDSSC, 2009, p. 127-130-
dc.identifier.scopusauthoridChen, G=7407501330en_HK
dc.identifier.scopusauthoridChoi, AHW=7404334877en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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