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Conference Paper: Regularization in inverse lithography: enhancing manufacturability and robustness to process variations

TitleRegularization in inverse lithography: enhancing manufacturability and robustness to process variations
Authors
Issue Date2010
PublisherThe Electrochemical Society.
Citation
The China Semiconductor Technology International Conference (CSTIC 2010), Shanghai, China, 18-19 March 2010. In ECS Transactions, 2010, v. 27 n. 1, p. 427-432 How to Cite?
AbstractInverse lithography, as a mask design tool, has the capability of producing unintuitive patterns with topologies much different from those obtained from either rule-based or model-based optical proximity correction (OPC). These mask patterns may have the advantage of producing circuit patterns that are otherwise very difficult to achieve; on the other hand, the mask may be too complicated that renders it impossible to manufacture, or that, the cost of producing it would be astronomical. There is also good likelihood that the resulting circuit patterns may be severely affected when there are process variations, such as in focus or dose. In this work, we discuss how various regularization techniques may be employed to tackle these two problems: simplifying the mask pattern in an inverse lithography process, and incorporating robustness explicitly in the design algorithm. ©The Electrochemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/126130
ISSN
2015 SCImago Journal Rankings: 0.212
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLam, EYen_HK
dc.date.accessioned2010-10-31T12:11:25Z-
dc.date.available2010-10-31T12:11:25Z-
dc.date.issued2010en_HK
dc.identifier.citationThe China Semiconductor Technology International Conference (CSTIC 2010), Shanghai, China, 18-19 March 2010. In ECS Transactions, 2010, v. 27 n. 1, p. 427-432en_HK
dc.identifier.issn1938-5862en_HK
dc.identifier.urihttp://hdl.handle.net/10722/126130-
dc.description.abstractInverse lithography, as a mask design tool, has the capability of producing unintuitive patterns with topologies much different from those obtained from either rule-based or model-based optical proximity correction (OPC). These mask patterns may have the advantage of producing circuit patterns that are otherwise very difficult to achieve; on the other hand, the mask may be too complicated that renders it impossible to manufacture, or that, the cost of producing it would be astronomical. There is also good likelihood that the resulting circuit patterns may be severely affected when there are process variations, such as in focus or dose. In this work, we discuss how various regularization techniques may be employed to tackle these two problems: simplifying the mask pattern in an inverse lithography process, and incorporating robustness explicitly in the design algorithm. ©The Electrochemical Society.en_HK
dc.languageengen_HK
dc.publisherThe Electrochemical Society.-
dc.relation.ispartofECS Transactionsen_HK
dc.titleRegularization in inverse lithography: enhancing manufacturability and robustness to process variationsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLam, EY:elam@eee.hku.hken_HK
dc.identifier.authorityLam, EY=rp00131en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1149/1.3360655en_HK
dc.identifier.scopuseid_2-s2.0-79959679595en_HK
dc.identifier.hkuros171695en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79959679595&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume27en_HK
dc.identifier.issue1en_HK
dc.identifier.spage427en_HK
dc.identifier.epage432en_HK
dc.identifier.isiWOS:000313327800068-
dc.description.otherThe China Semiconductor Technology International Conference (CSTIC 2010), Shanghai, China, 18-19 March 2010. In ECS Transactions, 2010, v. 27 n. 1, p. 427-432-
dc.identifier.scopusauthoridLam, EY=7102890004en_HK

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