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Conference Paper: Deep etch of GaN by laser micromachining

TitleDeep etch of GaN by laser micromachining
Authors
Mak, GYHLam, EYMChoi, HW
KeywordsEtching
GaN
Laser application
LEDs
Nanoscale pattern formation
Issue Date2009
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628
Citation
The 8th International Conference on Nitride Semiconductors (ICNS), Jeju, Korea, 18-23 October 2009. In Physica Status Solidi (C) Current Topics in Solid State Physics, 2010, v. 7 n. 7-8, p. 2151-2153 How to Cite?
DOI: http://dx.doi.org/10.1002/pssc.200983480
AbstractTrench formation for device isolation on GaN lightemitting diode (LED) wafers via nanosecond ultraviolet laser micromachining is demonstrated. Owing to the dissimilar ablation thresholds between GaN and sapphire, the etch process terminates automatically at the GaN/sapphire interface. It was found that optimal focus offset, optimal pulse energy and high repetition rate are essential for obtaining a trench with tapered sidewall and smooth bottom surface, which is suitable for the conformal deposition of interconnects across the trench. This technique has been successfully applied to the rapid prototyping of interconnected LED arrays on a single chip. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.
Persistent Identifierhttp://hdl.handle.net/10722/126107
ISI Accession Number ID
WOS:000301587600124
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorMak, GYHen_HK
dc.contributor.authorLam, EYMen_HK
dc.contributor.authorChoi, HWen_HK
dc.date.accessioned2010-10-31T12:10:10Z-
dc.date.available2010-10-31T12:10:10Z-
dc.date.issued2009en_HK
dc.identifier.citationThe 8th International Conference on Nitride Semiconductors (ICNS), Jeju, Korea, 18-23 October 2009. In Physica Status Solidi (C) Current Topics in Solid State Physics, 2010, v. 7 n. 7-8, p. 2151-2153en_HK
dc.identifier.urihttp://hdl.handle.net/10722/126107-
dc.description.abstractTrench formation for device isolation on GaN lightemitting diode (LED) wafers via nanosecond ultraviolet laser micromachining is demonstrated. Owing to the dissimilar ablation thresholds between GaN and sapphire, the etch process terminates automatically at the GaN/sapphire interface. It was found that optimal focus offset, optimal pulse energy and high repetition rate are essential for obtaining a trench with tapered sidewall and smooth bottom surface, which is suitable for the conformal deposition of interconnects across the trench. This technique has been successfully applied to the rapid prototyping of interconnected LED arrays on a single chip. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.-
dc.languageengen_HK
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628-
dc.relation.ispartofPhysica Status Solidi (C) Current Topics in Solid State Physics-
dc.subjectEtching-
dc.subjectGaN-
dc.subjectLaser application-
dc.subjectLEDs-
dc.subjectNanoscale pattern formation-
dc.titleDeep etch of GaN by laser micromachiningen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailMak, GYH: yhgmak@eee.hku.hken_HK
dc.identifier.emailLam, EYM: elam@eee.hku.hken_HK
dc.identifier.emailChoi, HW: hwchoi@eee.hku.hk-
dc.identifier.authorityLam, EYM=rp00131en_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/pssc.200983480-
dc.identifier.scopuseid_2-s2.0-77955824781-
dc.identifier.hkuros171692en_HK
dc.identifier.hkuros175222-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77955824781&selection=ref&src=s&origin=recordpage-
dc.identifier.volume7-
dc.identifier.issue7-8-
dc.identifier.spage2151-
dc.identifier.epage2153-
dc.identifier.isiWOS:000301587600124-
dc.publisher.placeGermany-
dc.description.otherThe 8th International Conference on Nitride Semiconductors (ICNS), Jeju, Korea, 18-23 October 2009.-
dc.identifier.scopusauthoridMak, GY=8678365200-
dc.identifier.scopusauthoridLam, EY=7102890004-
dc.identifier.scopusauthoridChoi, HW=7404334877-
dc.customcontrol.immutablesml 151002 - merged-

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