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Conference Paper: From nanosphere lithography to self-assembled photonic crystals

TitleFrom nanosphere lithography to self-assembled photonic crystals
Authors
KeywordsPhysics
Electricity
Issue Date2010
PublisherElectromagnetics Academy. The Journal's web site is located at http://www.piers.org/piersproceedings/
Citation
Progress in Electromagnetics Research Symposium (PIERS 2010), Cambridge, MA., 5-8 July 2010. In Progress in Electromagnetics Research Symposium Proceedings, 2010, p. 184 How to Cite?
AbstractAmongst nanolithography methods, electron-beam lithography (EBL) and nano-imprint lithography are most popular for fabrication of photonic crystal structures due to their high precision. However, cost of fabrication and yield are factored in for consideration, selfassembly methods have better potential towards commercialization; nanosphere lithography is one of the most feasible approach. Employing nanosphere lithography, we are able to pattern hexagonally close-packed arrays, and hence fabricate different kinds of photonic crystal structures. The inherent high refractive index of Gallium Nitride (GaN), which limits the light extraction efficiency of light-emitting diode (LED), in fact provides an excellent platform for the integration of photonic crystals. The light extraction problem of GaN can be solved by suppressing the guiding modes within in the LED structure. Intuitively, photonic crystal has extensively been utilized for light manipulation in different areas, and has been demonstrated as a mean of spontaneous emission control. Its periodic nature with dimensions close to the wavelength of light forbids the existence of certain optical modes, thereby achieving light confinement effects.
DescriptionSession: 1P5 - Optical Properties of Semiconductors and Nanostructures 2
Persistent Identifierhttp://hdl.handle.net/10722/126037
ISBN
ISSN

 

DC FieldValueLanguage
dc.contributor.authorFu, WYen_HK
dc.contributor.authorLi, KHen_HK
dc.contributor.authorChoi, HWen_HK
dc.date.accessioned2010-10-31T12:06:22Z-
dc.date.available2010-10-31T12:06:22Z-
dc.date.issued2010en_HK
dc.identifier.citationProgress in Electromagnetics Research Symposium (PIERS 2010), Cambridge, MA., 5-8 July 2010. In Progress in Electromagnetics Research Symposium Proceedings, 2010, p. 184en_HK
dc.identifier.isbn978-1-934142-14-1-
dc.identifier.issn1559-9450en_HK
dc.identifier.urihttp://hdl.handle.net/10722/126037-
dc.descriptionSession: 1P5 - Optical Properties of Semiconductors and Nanostructures 2-
dc.description.abstractAmongst nanolithography methods, electron-beam lithography (EBL) and nano-imprint lithography are most popular for fabrication of photonic crystal structures due to their high precision. However, cost of fabrication and yield are factored in for consideration, selfassembly methods have better potential towards commercialization; nanosphere lithography is one of the most feasible approach. Employing nanosphere lithography, we are able to pattern hexagonally close-packed arrays, and hence fabricate different kinds of photonic crystal structures. The inherent high refractive index of Gallium Nitride (GaN), which limits the light extraction efficiency of light-emitting diode (LED), in fact provides an excellent platform for the integration of photonic crystals. The light extraction problem of GaN can be solved by suppressing the guiding modes within in the LED structure. Intuitively, photonic crystal has extensively been utilized for light manipulation in different areas, and has been demonstrated as a mean of spontaneous emission control. Its periodic nature with dimensions close to the wavelength of light forbids the existence of certain optical modes, thereby achieving light confinement effects.-
dc.languageengen_HK
dc.publisherElectromagnetics Academy. The Journal's web site is located at http://www.piers.org/piersproceedings/-
dc.relation.ispartofProgress in Electromagnetics Research Symposium-
dc.subjectPhysics-
dc.subjectElectricity-
dc.titleFrom nanosphere lithography to self-assembled photonic crystalsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLi, KH: h0610282@hku.hken_HK
dc.identifier.emailChoi, HW: hwchoi@eee.hku.hk, hwchoi@hku.hk-
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturelink_to_OA_fulltext-
dc.identifier.hkuros175248en_HK
dc.identifier.spage184-
dc.identifier.epage184-
dc.publisher.placeUnited States-
dc.description.otherProgress in Electromagnetics Research Symposium (PIERS 2010), Cambridge, MA., 5-8 July 2010. In Progress in Electromagnetics Research Symposium Proceedings, 2010, p. 184-

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