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Article: Field effects in thin films of manganites using a planar field effect configuration

TitleField effects in thin films of manganites using a planar field effect configuration
Authors
KeywordsField effects
Metal-insulator phase transition
Thin films
Perovskite manganites
Issue Date2010
PublisherSpringer New York LLC. The Journal's web site is located at http://springerlink.metapress.com/openurl.asp?genre=journal&issn=0896-1107
Citation
Journal of Superconductivity and Novel Magnetism, 2010, v. 23, p. 855-857 How to Cite?
AbstractModulation of the metal-insulator phase transition of perovskite manganite oxides is achieved by a static electric field. The field is applied using a planar field-effect configuration, which was formed on a monolayer film. In such a field-effect configuration, La1−x A x MnO3 film is used as the channel and substrate acts as the gate. Both divalence-doped (La0.7Ba0.3MnO3, Pr0.7Sr0.3MnO3), and tetravalence-doped (La0.7Ce0.3MnO3) systems demonstrate significant field effects. The field modulations are found being nonlinear and polarity dependent on the applied bias. The results obtained in La0.7Ce0.3MnO3 indicates that electron doped manganites have similar features as those found in hole doped manganites. The observed field effects were discussed with the percolative phase separation picture.
Persistent Identifierhttp://hdl.handle.net/10722/125288
ISSN
2015 Impact Factor: 1.1
2015 SCImago Journal Rankings: 0.332
ISI Accession Number ID
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU 7024/07
Funding Information:

This work has been supported by a grant of the Research Grant Council of Hong Kong (Project No. HKU 7024/07).

 

DC FieldValueLanguage
dc.contributor.authorGao, Jen_HK
dc.contributor.authorHu, FXen_HK
dc.contributor.authorLiu, HYen_HK
dc.date.accessioned2010-10-31T11:22:25Z-
dc.date.available2010-10-31T11:22:25Z-
dc.date.issued2010en_HK
dc.identifier.citationJournal of Superconductivity and Novel Magnetism, 2010, v. 23, p. 855-857en_HK
dc.identifier.issn1557-1939en_HK
dc.identifier.urihttp://hdl.handle.net/10722/125288-
dc.description.abstractModulation of the metal-insulator phase transition of perovskite manganite oxides is achieved by a static electric field. The field is applied using a planar field-effect configuration, which was formed on a monolayer film. In such a field-effect configuration, La1−x A x MnO3 film is used as the channel and substrate acts as the gate. Both divalence-doped (La0.7Ba0.3MnO3, Pr0.7Sr0.3MnO3), and tetravalence-doped (La0.7Ce0.3MnO3) systems demonstrate significant field effects. The field modulations are found being nonlinear and polarity dependent on the applied bias. The results obtained in La0.7Ce0.3MnO3 indicates that electron doped manganites have similar features as those found in hole doped manganites. The observed field effects were discussed with the percolative phase separation picture.-
dc.languageengen_HK
dc.publisherSpringer New York LLC. The Journal's web site is located at http://springerlink.metapress.com/openurl.asp?genre=journal&issn=0896-1107en_HK
dc.relation.ispartofJournal of Superconductivity and Novel Magnetismen_HK
dc.rightsThe original publication is available at www.springerlink.com-
dc.subjectField effects-
dc.subjectMetal-insulator phase transition-
dc.subjectThin films-
dc.subjectPerovskite manganites-
dc.titleField effects in thin films of manganites using a planar field effect configurationen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1557-1939&volume=23&spage=855&epage=857&date=2010&atitle=Field+effects+in+thin+films+of+manganites+using+a+planar+field+effect+configurationen_HK
dc.identifier.emailGao, J: jugao@hku.hken_HK
dc.identifier.emailHu, FX: fxhu2002@hku.hken_HK
dc.identifier.emailLiu, HY: liuheyan@HKUCC-COM.hku.hken_HK
dc.identifier.authorityGao, J=rp00699en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s10948-010-0709-9-
dc.identifier.scopuseid_2-s2.0-77954814391-
dc.identifier.hkuros181546en_HK
dc.identifier.volume23en_HK
dc.identifier.spage855en_HK
dc.identifier.epage857en_HK
dc.identifier.isiWOS:000278546800061-

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