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Article: Quantum size effects on the work function of metallic thin film nanostructures

TitleQuantum size effects on the work function of metallic thin film nanostructures
Authors
KeywordsPb
Quantum well states
STM
Issue Date2010
PublisherNational Academy of Sciences. The Journal's web site is located at http://www.pnas.org
Citation
Proceedings Of The National Academy Of Sciences Of The United States Of America, 2010, v. 107 n. 29, p. 12761-12765 How to Cite?
AbstractIn this paper, we present the direct observation of quantum size effects (QSE) on the work function in ultrathin Pb films. By using scanning tunneling microscopy and spectroscopy, we show that the very existence of quantum well states (QWS) in these ultrathin films profoundly affects the measured tunneling decay constant κ, resulting in a very rich phenomenon of "quantum oscillations" in κ as a function of thickness, L, and bias voltage, Vs. More specifically, we find that the phase of the quantum oscillations in κ vs. L depends sensitively upon the bias voltage, which often results in a total phase reversal at different biases. On the other hand, at very low sample bias (|Vs| < 0.03 V) the measurement of κ vs. L accurately reflects the quantum size effect on the work function. In particular, the minima in the quantum oscillations of κ vs. L occur at the locations where QWS cross the Fermi energy, thus directly unraveling the QSE on the work function in ultrathin films, which was predicted more than three decades ago. This further clarifies several contradictions regarding the relationship between the QWS locations and the work function.
Persistent Identifierhttp://hdl.handle.net/10722/125270
ISSN
2014 Impact Factor: 9.674
PubMed Central ID
ISI Accession Number ID
Funding AgencyGrant Number
NSFDMR-0906025
CMMI-0928664
Welch FoundationF-1672
Texas Advanced Research Program003658-0037-2007
DOEDE-FG02-97ER45632
Funding Information:

This work was supported by NSF Grant DMR-0906025, CMMI-0928664, Welch Foundation F-1672, and Texas Advanced Research Program 003658-0037-2007. M.-Y.C. acknowledges support by DOE Grant DE-FG02-97ER45632.

References

 

DC FieldValueLanguage
dc.contributor.authorKim, Jen_HK
dc.contributor.authorQin, Sen_HK
dc.contributor.authorYao, Wen_HK
dc.contributor.authorNiu, Qen_HK
dc.contributor.authorChou, MYen_HK
dc.contributor.authorShih, CKen_HK
dc.date.accessioned2010-10-31T11:21:13Z-
dc.date.available2010-10-31T11:21:13Z-
dc.date.issued2010en_HK
dc.identifier.citationProceedings Of The National Academy Of Sciences Of The United States Of America, 2010, v. 107 n. 29, p. 12761-12765en_HK
dc.identifier.issn0027-8424en_HK
dc.identifier.urihttp://hdl.handle.net/10722/125270-
dc.description.abstractIn this paper, we present the direct observation of quantum size effects (QSE) on the work function in ultrathin Pb films. By using scanning tunneling microscopy and spectroscopy, we show that the very existence of quantum well states (QWS) in these ultrathin films profoundly affects the measured tunneling decay constant κ, resulting in a very rich phenomenon of "quantum oscillations" in κ as a function of thickness, L, and bias voltage, Vs. More specifically, we find that the phase of the quantum oscillations in κ vs. L depends sensitively upon the bias voltage, which often results in a total phase reversal at different biases. On the other hand, at very low sample bias (|Vs| < 0.03 V) the measurement of κ vs. L accurately reflects the quantum size effect on the work function. In particular, the minima in the quantum oscillations of κ vs. L occur at the locations where QWS cross the Fermi energy, thus directly unraveling the QSE on the work function in ultrathin films, which was predicted more than three decades ago. This further clarifies several contradictions regarding the relationship between the QWS locations and the work function.en_HK
dc.languageengen_HK
dc.publisherNational Academy of Sciences. The Journal's web site is located at http://www.pnas.orgen_HK
dc.relation.ispartofProceedings of the National Academy of Sciences of the United States of Americaen_HK
dc.rightsProceedings of the National Academy of Sciences. Copyright © National Academy of Sciences.-
dc.subjectPben_HK
dc.subjectQuantum well statesen_HK
dc.subjectSTMen_HK
dc.titleQuantum size effects on the work function of metallic thin film nanostructuresen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0027-8424&volume=107&issue=29&spage=12761&epage=12765&date=2010&atitle=Quantum+size+effects+on+the+work+function+of+metallic+thin+film+nanostructures-
dc.identifier.emailYao, W: wangyao@hku.hken_HK
dc.identifier.authorityYao, W=rp00827en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1073/pnas.0915171107en_HK
dc.identifier.pmid20615989-
dc.identifier.pmcidPMC2919909-
dc.identifier.scopuseid_2-s2.0-77955638292en_HK
dc.identifier.hkuros180363en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77955638292&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume107en_HK
dc.identifier.issue29en_HK
dc.identifier.spage12761en_HK
dc.identifier.epage12765en_HK
dc.identifier.isiWOS:000280144500012-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridKim, J=8728511300en_HK
dc.identifier.scopusauthoridQin, S=16639595400en_HK
dc.identifier.scopusauthoridYao, W=35141935300en_HK
dc.identifier.scopusauthoridNiu, Q=7006052653en_HK
dc.identifier.scopusauthoridChou, MY=7201844232en_HK
dc.identifier.scopusauthoridShih, CK=7402427659en_HK
dc.identifier.citeulike11241419-

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