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Article: Quantum size effects on the work function of metallic thin film nanostructures
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TitleQuantum size effects on the work function of metallic thin film nanostructures
 
AuthorsKim, J1
Qin, S1
Yao, W3
Niu, Q1
Chou, MY2
Shih, CK1
 
KeywordsPb
Quantum well states
STM
 
Issue Date2010
 
PublisherNational Academy of Sciences. The Journal's web site is located at http://www.pnas.org
 
CitationProceedings Of The National Academy Of Sciences Of The United States Of America, 2010, v. 107 n. 29, p. 12761-12765 [How to Cite?]
DOI: http://dx.doi.org/10.1073/pnas.0915171107
 
AbstractIn this paper, we present the direct observation of quantum size effects (QSE) on the work function in ultrathin Pb films. By using scanning tunneling microscopy and spectroscopy, we show that the very existence of quantum well states (QWS) in these ultrathin films profoundly affects the measured tunneling decay constant κ, resulting in a very rich phenomenon of "quantum oscillations" in κ as a function of thickness, L, and bias voltage, Vs. More specifically, we find that the phase of the quantum oscillations in κ vs. L depends sensitively upon the bias voltage, which often results in a total phase reversal at different biases. On the other hand, at very low sample bias (|Vs| < 0.03 V) the measurement of κ vs. L accurately reflects the quantum size effect on the work function. In particular, the minima in the quantum oscillations of κ vs. L occur at the locations where QWS cross the Fermi energy, thus directly unraveling the QSE on the work function in ultrathin films, which was predicted more than three decades ago. This further clarifies several contradictions regarding the relationship between the QWS locations and the work function.
 
ISSN0027-8424
2013 Impact Factor: 9.809
 
DOIhttp://dx.doi.org/10.1073/pnas.0915171107
 
PubMed Central IDPMC2919909
 
ISI Accession Number IDWOS:000280144500012
Funding AgencyGrant Number
NSFDMR-0906025
CMMI-0928664
Welch FoundationF-1672
Texas Advanced Research Program003658-0037-2007
DOEDE-FG02-97ER45632
Funding Information:

This work was supported by NSF Grant DMR-0906025, CMMI-0928664, Welch Foundation F-1672, and Texas Advanced Research Program 003658-0037-2007. M.-Y.C. acknowledges support by DOE Grant DE-FG02-97ER45632.

 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorKim, J
 
dc.contributor.authorQin, S
 
dc.contributor.authorYao, W
 
dc.contributor.authorNiu, Q
 
dc.contributor.authorChou, MY
 
dc.contributor.authorShih, CK
 
dc.date.accessioned2010-10-31T11:21:13Z
 
dc.date.available2010-10-31T11:21:13Z
 
dc.date.issued2010
 
dc.description.abstractIn this paper, we present the direct observation of quantum size effects (QSE) on the work function in ultrathin Pb films. By using scanning tunneling microscopy and spectroscopy, we show that the very existence of quantum well states (QWS) in these ultrathin films profoundly affects the measured tunneling decay constant κ, resulting in a very rich phenomenon of "quantum oscillations" in κ as a function of thickness, L, and bias voltage, Vs. More specifically, we find that the phase of the quantum oscillations in κ vs. L depends sensitively upon the bias voltage, which often results in a total phase reversal at different biases. On the other hand, at very low sample bias (|Vs| < 0.03 V) the measurement of κ vs. L accurately reflects the quantum size effect on the work function. In particular, the minima in the quantum oscillations of κ vs. L occur at the locations where QWS cross the Fermi energy, thus directly unraveling the QSE on the work function in ultrathin films, which was predicted more than three decades ago. This further clarifies several contradictions regarding the relationship between the QWS locations and the work function.
 
dc.description.natureLink_to_subscribed_fulltext
 
dc.identifier.citationProceedings Of The National Academy Of Sciences Of The United States Of America, 2010, v. 107 n. 29, p. 12761-12765 [How to Cite?]
DOI: http://dx.doi.org/10.1073/pnas.0915171107
 
dc.identifier.citeulike11241419
 
dc.identifier.doihttp://dx.doi.org/10.1073/pnas.0915171107
 
dc.identifier.epage12765
 
dc.identifier.hkuros180363
 
dc.identifier.isiWOS:000280144500012
Funding AgencyGrant Number
NSFDMR-0906025
CMMI-0928664
Welch FoundationF-1672
Texas Advanced Research Program003658-0037-2007
DOEDE-FG02-97ER45632
Funding Information:

This work was supported by NSF Grant DMR-0906025, CMMI-0928664, Welch Foundation F-1672, and Texas Advanced Research Program 003658-0037-2007. M.-Y.C. acknowledges support by DOE Grant DE-FG02-97ER45632.

 
dc.identifier.issn0027-8424
2013 Impact Factor: 9.809
 
dc.identifier.issue29
 
dc.identifier.openurl
 
dc.identifier.pmcidPMC2919909
 
dc.identifier.pmid20615989
 
dc.identifier.scopuseid_2-s2.0-77955638292
 
dc.identifier.spage12761
 
dc.identifier.urihttp://hdl.handle.net/10722/125270
 
dc.identifier.volume107
 
dc.languageeng
 
dc.publisherNational Academy of Sciences. The Journal's web site is located at http://www.pnas.org
 
dc.publisher.placeUnited States
 
dc.relation.ispartofProceedings of the National Academy of Sciences of the United States of America
 
dc.relation.referencesReferences in Scopus
 
dc.rightsProceedings of the National Academy of Sciences. Copyright © National Academy of Sciences.
 
dc.subjectPb
 
dc.subjectQuantum well states
 
dc.subjectSTM
 
dc.titleQuantum size effects on the work function of metallic thin film nanostructures
 
dc.typeArticle
 
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<description.abstract>In this paper, we present the direct observation of quantum size effects (QSE) on the work function in ultrathin Pb films. By using scanning tunneling microscopy and spectroscopy, we show that the very existence of quantum well states (QWS) in these ultrathin films profoundly affects the measured tunneling decay constant &#954;, resulting in a very rich phenomenon of &quot;quantum oscillations&quot; in &#954; as a function of thickness, L, and bias voltage, Vs. More specifically, we find that the phase of the quantum oscillations in &#954; vs. L depends sensitively upon the bias voltage, which often results in a total phase reversal at different biases. On the other hand, at very low sample bias (|Vs| &lt; 0.03 V) the measurement of &#954; vs. L accurately reflects the quantum size effect on the work function. In particular, the minima in the quantum oscillations of &#954; vs. L occur at the locations where QWS cross the Fermi energy, thus directly unraveling the QSE on the work function in ultrathin films, which was predicted more than three decades ago. This further clarifies several contradictions regarding the relationship between the QWS locations and the work function.</description.abstract>
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Author Affiliations
  1. University of Texas at Austin
  2. Georgia Institute of Technology
  3. The University of Hong Kong