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Article: Electric-field modulation of the number of helical edge states in thin-film semiconductors
Title | Electric-field modulation of the number of helical edge states in thin-film semiconductors | ||||
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Authors | |||||
Keywords | Physics | ||||
Issue Date | 2010 | ||||
Publisher | American Physical Society. The Journal's web site is located at http://prb.aps.org/ | ||||
Citation | Physical Review B (Condensed Matter and Materials Physics), 2010, v. 81 n. 11, article no. 115322 How to Cite? | ||||
Abstract | We propose a method that can be used to modulate the topological orders or the number of helical edge states in ultrathin-film semiconductors without a magnetic field. By applying a staggered periodic potential, the system undergoes a transition from a topological trivial insulating state into a nontrivial one with helical edge states emerging in the band gap. Further study demonstrates that the number of helical edge states can be modulated by the amplitude and the geometry of the electric potential in a stepwise fashion, which is analogous to tuning the integer quantum Hall conductance by a magnetic field. We address the feasibility of experimental measurement of this topological transition. © 2010 The American Physical Society. | ||||
Persistent Identifier | http://hdl.handle.net/10722/125266 | ||||
ISSN | 2014 Impact Factor: 3.736 | ||||
ISI Accession Number ID |
Funding Information: This work was supported by the Research Grant Council of Hong Kong under Grants No. HKU 7041/07P and No. HKU 10/CRF/08. | ||||
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jiang, ZF | en_HK |
dc.contributor.author | Chu, RL | en_HK |
dc.contributor.author | Shen, SQ | en_HK |
dc.date.accessioned | 2010-10-31T11:20:59Z | - |
dc.date.available | 2010-10-31T11:20:59Z | - |
dc.date.issued | 2010 | en_HK |
dc.identifier.citation | Physical Review B (Condensed Matter and Materials Physics), 2010, v. 81 n. 11, article no. 115322 | - |
dc.identifier.issn | 1098-0121 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/125266 | - |
dc.description.abstract | We propose a method that can be used to modulate the topological orders or the number of helical edge states in ultrathin-film semiconductors without a magnetic field. By applying a staggered periodic potential, the system undergoes a transition from a topological trivial insulating state into a nontrivial one with helical edge states emerging in the band gap. Further study demonstrates that the number of helical edge states can be modulated by the amplitude and the geometry of the electric potential in a stepwise fashion, which is analogous to tuning the integer quantum Hall conductance by a magnetic field. We address the feasibility of experimental measurement of this topological transition. © 2010 The American Physical Society. | en_HK |
dc.language | eng | en_HK |
dc.publisher | American Physical Society. The Journal's web site is located at http://prb.aps.org/ | en_HK |
dc.relation.ispartof | Physical Review B (Condensed Matter and Materials Physics) | - |
dc.rights | Copyright 2010 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.81.115322 | - |
dc.subject | Physics | - |
dc.title | Electric-field modulation of the number of helical edge states in thin-film semiconductors | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=81&issue=11 article no. 115322&spage=&epage=&date=2010&atitle=Electric+field+modulation+of+number+of+helical+edge+states+in+ultrathin+film+semiconductors | - |
dc.identifier.email | Shen, SQ: sshen@hkucc.hku.hk | en_HK |
dc.identifier.authority | Shen, SQ=rp00775 | en_HK |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1103/PhysRevB.81.115322 | en_HK |
dc.identifier.scopus | eid_2-s2.0-77954987301 | en_HK |
dc.identifier.hkuros | 174866 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-77954987301&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 81 | en_HK |
dc.identifier.issue | 11 | en_HK |
dc.identifier.spage | article no. 115322 | - |
dc.identifier.epage | article no. 115322 | - |
dc.identifier.isi | WOS:000276248800099 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Jiang, ZF=24171139900 | en_HK |
dc.identifier.scopusauthorid | Chu, RL=25925722300 | en_HK |
dc.identifier.scopusauthorid | Shen, SQ=7403431266 | en_HK |
dc.identifier.issnl | 1098-0121 | - |